Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.     

Efficient three-step entanglement concentration for an arbitrary four-photon cluster state

We propose an entanglement concentration protocol to concentrate an arbitrary partially-entangled four-photon cluster state.As a pioneering three-step entanglement concentration scheme,our protocol only needs a single-photon resource to assist the concentration in each step,which makes this protocol more economical.With the help of the linear optical elements and weak cross-Kerr nonlinearity,one can obtain a maximally-entangled cluster state via local operations and classical communication.Moreover,the protocol can be iterated to obtain a higher success probability and is feasible under current experimental conditions.     

Comparative investigation of resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air

A comparative investigation of resistance and ability to trigger high voltage (HV) discharge for single filament (SF) and multiple filaments (MF) has been carried out. The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance, but this is not the case for the MF. The MF's resistance is much smaller than SF's. However, the MF shows a bit higher HV breakdown threshold than the SF. The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.     

基于金银合金薄膜的近红外表面等离子体共振传感器研究

利用淀积在玻璃衬底上的金银合金薄膜作为表面等离子体共振(SPR)芯片, 构建了Kretschmann结构的近红外波长检测型SPR传感器. 采用不同浓度的葡萄糖水溶液测试了金银合金薄膜SPR传感器的折射率灵敏度. 实验结果表明随着入射角从7.5°增大到 9.5°, SPR吸收峰的半高峰宽从292.8 nm 减小到 131.4 nm, 共振波长从 1215 nm蓝移到 767.7 nm, 折射率灵敏度从35648.3 nm/RIU 减小到 9363.6 nm/RIU.在相同的初始共振波长(λ_R)下获得的金银合金薄膜SPR折射率灵敏度高于纯金膜(纯金膜在λ_R=1215 nm下的折射率灵敏度为29793.9 nm/RIU). 利用1 μmol/L的牛血清蛋白(BSA)水溶液测试了传感器对蛋白质吸附的响应.结果表明, BSA分子吸附使得金银合金薄膜SPR吸收峰红移了12.1 nm而纯金膜SPR吸收峰仅红移了9.5 nm. 实验结果还表明, 在相同λ_R下, 金银合金薄膜SPR吸收峰的半高峰宽大于纯金膜的半高峰宽, 因此其光谱分辨率比纯金膜SPR传感器低. 关键词： 金银合金薄膜 表面等离子体共振 波长检测型 高灵敏度     

铈掺杂高钆镥氧化物玻璃制备和光谱性能

实验中采用高温熔融法制备了一系列高钆镥硼硅酸盐新型玻璃体系样品,研究了这种新型玻璃体系的玻璃形成区,测量了样品的玻璃稳定性和密度。结果表明,玻璃体系的玻璃形成区较广,玻璃稳定性良好（析晶温度与转变温度的差为262 ℃）,且玻璃样品的密度达到5 g/cm3。以此种玻璃体系作为基质掺入Ce3+离子,测量其透过光谱、激发光谱、发射光谱、X射线激发发射光谱以及Gd3+离子的衰减时间。结果表明,玻璃的透过性能适合Ce3+离子的掺杂,并且Gd2O3和Lu2O3对闪烁体发光都具有积极的影响,同时研究了Gd3+离子和Ce3+离子的能量传递机理及最佳能量传递掺杂摩尔比。从玻璃的物理性能和光谱性能考虑,这种闪烁玻璃系统具有广泛应用于高能物理材料中的一定潜力。     

抑制高阶谐波误差的随机相移条纹分析算法

高阶谐波和随机相移误差是影响条纹分析精度的主要因素。为了同时解决这两个问题,提出了基于频域滤波的迭代相移算法。该算法采用巴特沃斯低通滤波器,从频域上滤除条纹的高阶谐波分量,再运用最小二乘迭代方法从三帧随机相移条纹图像中提取相位信息。数值模拟和实验结果表明,该算法可有效地抑制由高阶谐波和随机相移引入的波纹误差,误差PV值和RMS值分别为0.368 8 rad和0.025 3 rad,其精度高于传统的三步相移算法和Wang算法。该方法适合于高精度干涉测量和三维物体表面轮廓测量。     

密集阵高功率微波空间功率合成

对基于矩形阵列的高功率微波二维密集阵阵列合成进行了研究。仿真分析了均匀矩形栅格阵列的远场方向图,结果表明采用密集阵可以实现高效的、具有确定主波束的空间功率合成。并分析了阵元间距及阵元初相位对阵列空间功率合成的影响,结果表明:阵元间距越小,栅瓣越少,主波束宽度越宽,具有确定主波束的临界距离越小;当目标高度超过阵临界距离时,阵元初相位相差越小合成效率越高,阵列初相位分布范围超过/2时,阵列得不到确定的主波束,进行阵列设计时应充分考虑阵元间距及初相位对阵列合成的影响。     

入射角度对高反膜及干涉滤光片的影响

利用周期性多层介质膜的特征矩阵方法,采用MATLAB模拟计算了当入射光波并非垂直入射膜系时,高反膜反射率和法布里-珀罗干涉滤光片透过率的变化。结果表明,随着入射角度的增加,多层介质膜的工作波长向短波方向移动。并利用光程差的原理对这一现象进行了分析。     

利用液体夹心法测量LiF单晶高压热导率

提出了液体夹心法热导率测量技术, 采用CHBr3液体作为夹心材料实现了样品/窗口界面的理想接触, 并将动载荷作用下的夹心法高压热导率实验测量压力下限拓展至40 GPa, 为绝缘介电晶体高温高压热导率测量提供了技术支持. 实验利用平面碰撞和DPS测试技术, 结合液体夹心法实测了LiF单晶高压热导率数据, 对现有热导率理论模型进行了研究和探讨, 结果显示, 在γ/γ0=(ρ0/ρ)2时, 修正后的Roufosse理论公式与实验数据符合较好, 这一研究结果为非透明材料冲击波温度测量中的热传导修正提供了实验数据和理论模型。     

Cd-Sn(0.2)-Zn三元合金高压相图的测定

 为了验证三元合金高压相图的计算结果，本文采用高压DTA方法，测定了Cd-Sn-Zn三元系中x_Sn=20 at.%截面的高压垂直截面相图，实验压力为0、0.5、1.0、1.5 GPa。测得的常压相图（p=0 GPa）中其液相线与H. J. Bray的实验结果完全相符，所得高压相图与常压相图比较，在p=1.5 GPa时低共晶点上移了大约35 K，共析组成向富锌端移动了大约8%。