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21.
Hexafluoroacetylacetonate hafnium(IV) complex has been synthesized and studied by X-ray structural analysis. Crystal data for C30H8F36Hf2O14 are: a = 12.957(3) Å, b = 16.687(3) Å, c = 12.398(3) Å, β = 108.97°, space group P21/c, Z = 2, d calc = 2.137 g/cm3, R = 0.047. The molecular structure is built from discrete binuclear molecules of Hf2(OH)2(hfac)6 composition; the Hf...Hf distance in dimer is 3.533 Å. The structural units are connected by van der Waals interactions in the crystal.  相似文献   
22.
Raman and IR spectra (4000-50 cm–1) of solid cyclopentadienyl zirconium and hafnium hydrides Cp2MH2, Cp2MD2, Cp2Zr(H)X, and Cp2Zr(D)X (Cp = 5-C5H5; M = Zr, Hf; X = Cl, Br) have been studied. The vibrational modes of MH groups, Cp-rings, and metal-ligand bonds are discussed and the band assignments are proposed. In the solid state, these complexes form polymers with linear hydride bridges of the M-H-M type. The force constants of the M-H and M-Cp bonds increase on going from Zr to Hf.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1604–1609, September, 1994.  相似文献   
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The electronic absorption (EAS) and fluorescence spectra and electrocatalytic and photoelectrochemical characteristics of mixed-ligand complexes of zirconium(IV) and hafnium(IV) based on phthalocyanines in solutions and in thin films were investigated. It was established that a significant bathochromic shift of the Q band and redistribution of the intensities in the absorption bands are observed in the electronic absorption spectra. It was shown that films of the synthesized compounds are promising for use as photosensitizers and electrochemical sensors for oxygen in solution. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 44, No. 3, pp. 133–137, May–June, 2008.  相似文献   
25.
应用氧氮分析仪建立碳化铪粉末中氧的测定方法。针对碳化铪熔点极高的特性,对加热功率、称样量和空白值等测定条件进行探讨,选择适合的助熔剂和高温石墨坩埚,确定了最佳测试条件。将该方法用于实际样品测定,测定结果的相对标准偏差小于2.0%(n=9),样品的加标回收率为98.1%~102.6%。  相似文献   
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The first three representatives of a new family of volatile organohafnium compounds suitable as metallo-organic chemical vapour deposition precursors were synthesized. A combination of cyclopentadienyl and alkoxo-ligands with a bicyclo[2.2.1]heptanc framework was used. Volatility at relatively low temperatures for hafnium compounds was found and the precursors were characterized by elemental analysis and spectroscopic methods (IR, 1H and 13C NMR, mass spectrometry and mass-analysed ion kinetic energy spectroscopy). The outlook for use in hafnium functional materials synthesis was derived from the fragmentation data.  相似文献   
28.
First-principles calculations of undoped HfO(2) and cobalt-doped HfO(2) have been carried out to study the magnetic properties of the dielectric material. In contrast to previous reports, it was found that the native defects in HfO(2) could not induce strong ferromagnetism. However, the cobalt substituting hafnium is the most stable defect under oxidation condition, and the ferromagnetic (FM) coupling between the cobalt substitutions is favorable in various configurations. We found that the FM coupling is mediated by the threefold-coordinated oxygen atoms in monoclinic HfO(2) and could be further enhanced in electron-rich condition.  相似文献   
29.
The first acetylene complex of hafnium, Cp2Hf[Me3SiC=CHf(H)Cp2], was synthesized by the reaction of hafnocene dihydride Cp2HfH2 with bis(trimethylsilyl)acetylene in benzene. The reaction is accompanied by elimination of the Me3Si group from the molecule of the initial acetylene, as a result of which the acetylenide derivative of hafnium Cp2Hf(C=CSiMe3)(H) acts as an acetylene ligand in the complex. Under analogous conditions, the reaction of zirconocene dihydride Cp2ZrH2 with bis(trimethylsilyl)acetylene affords an analogous acetylene complex of zirconium Cp2Zr(M3SiC=CZr(H)Cp2]. Reactions of Cp2HfH2 with tolane and 3-hexyne proceed differently than the reaction with bis(trimethylsilyl)acetylene. Here the corresponding hafnacyclopentadiene metallacycles are the final products. For preliminary communication, see Ref. 3. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 853–856, April, 1997.  相似文献   
30.
Quantitative electron probe microanalysis of highly insulating materials is a complicated problem, partially solved by coating samples with grounded thin conductive layers or using novel scanning electron microscopy (SEM) techniques, such as low-voltage and/or variable pressure SEM. In this work, some problems of quantitative X-ray microanalysis of thin HfO2 films, in particular the possibility to determine mass thickness correlated to the density of the layer material, are discussed. For comparison, Al2O3, Ta2O5 and TiO2 films grown onto both semiconductive Si and insulating quartz substrates were also analysed. All the films studied were synthesized by atomic layer deposition method.  相似文献   
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