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131.
 利用金刚石对顶砧(DAC)高压装置产生高压,使用体积比为16∶3∶1的甲醇、乙醇和水混合液作为传压介质,通过原位高压同步辐射技术对氧化镓的高压行为进行了研究(0~42.5 GPa)。实验发现在室温下13.3 GPa压力附近,单斜结构的氧化镓发生了结构相变,变成三角结构。相变后镓离子由原来同时位于由氧离子围成的四面体和八面体的中心位置变成只位于八面体的中心位置。卸压后的X射线衍射谱表明,氧化镓又恢复为单斜结构,该相变为可逆相变。  相似文献   
132.
MgO在Mg-hBN体系中对合成cBN晶体的影响   总被引:3,自引:0,他引:3       下载免费PDF全文
 以金属镁粉为触媒,以六角氮化硼为原料,其中加入适量比例的氧化镁,在国产六面顶压机上,在约5.0 GPa压力、1 500~1 800 K温度条件下,合成出了颜色均匀、晶形完整的黄色立方氮化硼单晶体。实验结果表明,在Mg-hBN体系中,氧化镁对合成cBN晶体的颜色及合成温度有很大的影响。  相似文献   
133.
Green light emitting Mn2+ doped Zn2SiO4 particles embedded in SiO2 host matrix were synthesized by a sol–gel method. After the incorporation of ZnO:Mn nanoparticles in a silica monolith using sol–gel method with supercritical drying of ethyl alcohol in two steps, it was heat treated in air at 1200 °C for 2 h in order to obtain the SiO2/α-Zn2SiO4:Mn nanocomposites. The microstructure of phosphor crystals was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). XRD results indicate that the pure phase α-Zn2SiO4 with rhombohedral structure was obtained after thermal treatment at 1200 °C. The SiO2-Zn2SiO4:Mn nanocomposites with a Mn doping concentration of 1.5 at% exhibit two broadband emissions in the visible range: a strong green emission at around 525 nm and a second one in the range between 560 and 608 nm. This nanocomposite with a Mn doping concentration of 0.05 shows the highest relative emission intensity. Upon 255 nm excitation, the luminescence decay time of the green emission of Zn2SiO4:Mn around 525 nm is 11 ms. The luminescence spectra at 525 nm (4T16A1) and lifetime of the excited state of Mn2+ ions-doped Zn2SiO4 nanocrystals are investigated.  相似文献   
134.
We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D + G bands, and located at ~3240 and ~ 4260 cm–1, respectively. The graphene thickness and stacking geometry effects for these two modes are systematically studied. The features of the 2D' band, which arises from intravalley double resonance, are not sensitive to the variation of thickness with single Lorentzian peak and fixed linewidth. We explain it theoretically by calculating the phonon dispersion mode in k‐space and find that the flat band region of longitudinal optical phonon near Γ point is the mechanism leading to the 2D' band nonsplit. With the thickness increasing, the band position exhibits blueshift and the linewidth increases for the 2D + G band. With changing thickness and stacking geometry of graphene, the intensities of these two high‐frequency bands show obvious different evolution compared with that of G band. Copyright © 2012 John Wiley & Sons, Ltd.  相似文献   
135.
InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.  相似文献   
136.
Spectra of 107Ag18O and 107Ag16O molecules have been obtained in a low-pressure arc in oxygen atmosphere, and recorded with medium dispersion. Vibrational assignments for the bands of B 2π —X2π system were verified by the study of the oxygen isotope effect, and the vibrational constants were obtained for the states involved in transitions.  相似文献   
137.
采用乘积近似法计算了氧化亚氮分子的总配分函数,其中转动配分函数考虑了离心扭曲修正,振动配分函数采用谐振子近似. 利用计算所得的配分函数和实验振动跃迁矩平方及Herman-Wallis因子系数,计算了氧化亚氮3000—0200和1001—0110跃迁带在常温和高温下的线强度. 结果显示,当温度高达3000K时,计算所得线强度与实验值及HITRAN数据库提供的结果仍符合较好. 这表明高温下的分子配分函数和线强度的计算是可靠的. 还进一步计算了氧化亚氮3000—0200和1001—0110跃迁带在更高温度(40 关键词: 氧化亚氮 配分函数 线强度 高温  相似文献   
138.
基于石墨烯的半导体光电器件研究进展   总被引:1,自引:0,他引:1       下载免费PDF全文
石墨烯自从被发现以来,由于其零带隙、低电导率、常温下的高电子迁移率及量子霍尔效应和独特的光吸收等优良特性,引发了世界各国科研人员的重视,研究人员对其物理性质及应用的研究越来越多并且进展迅速.本文以光纤通信用光电器件中的探测器、调制器为主,综述了石墨烯在光电探测器、调制器以及超快锁模激光器和用于发光二级管、触摸屏透明导电薄膜等方面的应用.  相似文献   
139.
采用电沉积及后续的热处理技术,在Ti衬底上合成了一种三维多孔花状ZnO微纳结构薄膜. 这种ZnO结构是由包含大量纳米颗粒和孔洞的纳米薄片组成,纳米颗粒的大小可以通过调节电沉积时间和煅烧温度控制. 光催化性能的测试表明这种多孔ZnO薄膜是一种理想的光催化剂.  相似文献   
140.
Z. M. Liu  M. A. Vannice   《Surface science》1996,350(1-3):45-59
The interaction between submonolayer titania coverages and Pt foil has been studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). The submonolayer titania can be fully oxidized to TiO2 at 923 K under 10−8 Torr O2, and partially oxidized to TiOx at lower oxidation temperatures. The oxidized surface can be reduced by annealing to 1000 K or higher, or by heating in H2 at 823 K, or by interacting with surface carbon formed from acetone decomposition. Under certain conditions (e.g., hydrogen reduction at 923 K), the surface titania can be fully reduced to metallic Ti which diffuses into bulk Pt readily. The reduced metallic Ti can resurface when the surface is oxidized at 923 K. Both XPS and HREELS data indicate the existence of subsurface oxygen, which plays an important role for the diffusion of Ti into and out of the Pt foil. Although no special interfacial active sites were revealed by HREELS studies of adsorbed acetone and CO, some TPD and XPS data suggest the presence of sites active for acetone decomposition.  相似文献   
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