Optical Thin-Film Sensors for the Determination of Aqueous Halide Ions

Fourteen thin-film optical sensors in which halide-sensitive fluorophores are immobilized in a thin copolymer film (50 m, dry) have been developed and characterized. The sensor films use rhodamine, 6-methoxyquinoline, and harmane dyes which have been functionalized and bound to a hydrophilic copolymer. The sensor films are reversibly capable of determining aqueous bromide and iodide with 4 and 2% accuracy, respectively, at concentrations of around 10^–3 mol dm^–3, and are more sensitive than previous plastic sensor fabrications. The 90% response time to molar iodide is 30–60 s. A combination of sensor films allows the simultaneous determination of both I^– and Br^– in a mixed-halide solution. The interference of several ions, including pseudo-halides, on the sensor films has been studied.     

磁场中液氦薄膜表面电子涟波子系统的性质

研究了磁场中液氦薄膜表面电子与涟波子强耦合和弱耦合的性质。采用线性组合算符方法导出磁场中液氦薄膜表面电子 涟波子系统的振动频率和基态能量。讨论磁场对表面电子 涟波子系统的振动频率和基态能量的影响。     

晶体偏光棱镜光强透射比研究

在菲涅耳公式、相位匹配条件和多光束干涉理论的基础上,将晶体偏光棱镜的各参量表示为合理的几何模型,得出了光强透射比随空间入射角的变化关系,并设计了验证光强透射比的实验,实验结果和理论推导相一致.结果表明：胶合层间的多光束干涉对棱镜光强透射比的影响不可忽略,对于空气隙型偏光棱镜,由于空气隙间多光束干涉的影响,光强透射比随任意角度变化较大,而用胶合介质胶合的棱镜,其透射比对空间入射角不是很敏感.     

Sb，In，P掺杂对SnO_2薄膜透明导电性能的影响(英文)

采用溶胶凝胶(Sol-Gel)技术制备了SnO2:(Sb,In)透明导电薄膜,优化了制备工艺参数,获得了最佳制备条件,研究表明,4%的铟掺杂有效地改善了薄膜的内部结构,使得紫外-可见光的透过率显著增加;7%的锑掺杂释放出了更多的载流子,使薄膜的方块电阻降低,2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率.Sb、In、P的掺入使得SnO2薄膜的紫外-可见光的透过率达83%,方块电阻达38Ω/□     

Bi-Sb-Te基热电薄膜温差电池离子束溅射制备与表征

本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi₂Te₃热电薄膜和p型Sb₂Te₃热电薄膜.在退火时间同为1 h的条件下,对所制备的Bi₂Te₃薄膜和Sb₂Te₃薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150 ℃时,制备的n型Bi₂Te₃关键词： 薄膜温差电池 2Te₃薄膜')" href="#">Sb₂Te₃薄膜 2Te₃薄膜')" href="#">Bi₂Te₃薄膜 离子束溅射     

Application of Autoradiography to the Investigation of New Doping Techniques of Semiconductor Materials

The development of technology of new semiconductor devices requires fundamental studies of a number of phenomena taking place in semiconductors during the doping process or accompanying the doping process.

These studies are concerned with the following problems:

1. Diffusion of gold in silicon and the effect of diffusion layers (particularly phosphorus layers) and epitaxial silicon layers on the distribution of gold in thin silicon plates.

2. Distribution of admixtures in silicon introduced with the aid of the ion implantation technique. Our studies concerned with the second of the above mentioned problems comprised an autoradiographic examination of the homogeneity of the beam of phosphorus ions implanted in silicon, and a study of some apparatus factors and of the purity of the basic material on the implantation.     

银薄层控制金纳米四足体的重塑和等离激元调谐

探究了溶液中不同温度以及不同溶液成分(I^-的引入)对金纳米四足体(GNTPs)重塑过程的影响，表明了GNTPs的重塑机制为Ostwald熟化，即弱结合的表面Au原子在高凸曲率区域溶解和在凹区域重新沉积。这种重塑过程可以随时通过镀银薄层在几秒内阻止，GNTPs的形貌可以在最大程度上得到很好的稳定，从而也可以防止其光学性质的演变。在此基础上，通过紫外可见近红外(UV-Vis-NIR)吸收光谱和基于同步辐射的小角X射线散射(SAXS)进一步研究了GNTPs/Ag的稳定性，并通过表面增强拉曼散射(SERS)光谱证实了GNTPs/Ag的光学响应。     

Atmospheric pressure chemical vapour deposition of fluorine‐doped tin(IV) oxide from fluoroalkyltin precursors

Perfluoroalkytin compounds R_(4−n)Sn(R_f)_n (R = Me, Et, Bu, R_f = C₄F₉, n = 1; R = Bu, R_f = C₄F₉, n = 2, 3; R = Bu, R_f = C₆F₁₃, n = 1) have been synthesized, characterized by ¹H, ¹³C, ¹⁹F and ¹¹⁹Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine‐doped SnO₂ thin films. All precursors were sufficiently volatile in the range 84–136 °C and glass substrate temperatures of ca 550 °C to yield high‐quality films with ca 0.79–2.02% fluorine incorporation, save for Bu₃SnC₆F₁₃, which incorporated <0.05% fluorine. Films were characterized by X‐ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et₃SnC₄F₉. An electron diffraction study of Me₃SnC₄F₉ revealed four conformations, of which only the two of lowest abundance showed close F Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ‐ or δ‐carbon atoms of the R_f chain. Copyright © 2005 John Wiley & Sons, Ltd.     

Molecular organization in MAPLE‐deposited conjugated polymer thin films and the implications for carrier transport characteristics

The morphological structure of poly(3‐hexylthiophene) (P3HT) thin films deposited by both Matrix Assisted Pulsed Laser Evaporation (MAPLE) and solution spin‐casting methods are investigated. The MAPLE samples possessed a higher degree of disorder, with random orientations of polymer crystallites along the side‐chain stacking, π–π stacking, and conjugated backbone directions. Moreover, the average molecular orientations and relative degrees of crystallinity of MAPLE‐deposited polymer films are insensitive to the chemistries of the substrates onto which they were deposited; this is in stark contrast to the films prepared by the conventional spin‐casting technique. Despite the seemingly unfavorable molecular orientations and the highly disordered morphologies, the in‐plane charge carrier transport characteristics of the MAPLE samples are comparable to those of spin‐cast samples, exhibiting similar transport activation energies (56 vs. 54 meV) to those reported in the literature for high mobility polymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 39–48