Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

We demonstrate a simple, low‐cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono‐crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma‐assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in‐situ Czochralski process. We show well‐behaved high‐κ /metal gate metal–oxide–semiconductor capacitors (MOSCAPs) using this film. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Hydridoorganostannylene Coordination: Group 4 Metallocene Dichloride Reduction in Reaction with Organodihydridostannate Anions

Organodihydridoelement anions of germanium and tin were reacted with metallocene dichlorides of Group 4 metals Ti, Zr and Hf. The germate anion [Ar*GeH₂]⁻ reacts with hafnocene dichloride under formation of the substitution product [Cp₂Hf(GeH₂Ar*)₂]. Reaction of the organodihydridostannate with metallocene dichlorides affords the reduction products [Cp₂M(SnHAr*)₂] (M=Ti, Zr, Hf). Abstraction of a hydride substituent from the titanium bis(hydridoorganostannylene) complex results in formation of cation [Cp₂M(SnAr*)(SnHAr*)]⁺ exhibiting a short Ti–Sn interaction. (Ar*=2,6-Trip₂C₆H₃, Trip=2,4,6-triisopropylphenyl).     

Mechanistic Dichotomy of Magnesium‐ and Zinc‐Based Germanium Nucleophiles in the C(sp3)−Ge Cross‐Coupling with Alkyl Electrophiles

Robust procedures for two mechanistically distinct C(sp³)?Ge bond formations from alkyl electrophiles and germanium nucleophiles are reported. The germanium reagents were made available as bench‐stable solutions by lithium‐to‐magnesium and lithium‐to‐zinc transmetalation, respectively. The germanium Grignard reagent reacts with various primary and secondary alkyl electrophiles by an ionic nucleophilic displacement. Conversely, the coupling of the corresponding zinc reagent requires a nickel catalyst, which then engages in radical bond formations with primary, secondary, and even tertiary alkyl bromides. Both methods avoid the regioselectivity issue of alkene hydrogermylation and enable the synthesis of a wide range of functionalized alkyl‐substituted germanes.     

Room-Temperature Synthesis of Germanium Oxide Nanofilaments and Their Potential Use as Luminescent Self-Cleaning Surfaces

Germanium oxide nanofilaments (GNFs) have been synthesized under ambient conditions from the gas phase using germanium tetrachloride as a precursor. Non-crystalline GNFs synthesized by this procedure are 1–10 μm in length and 80–110 nm in diameter applying Droplet Assisted Growth and Shaping (DAGS) Chemistry. The relative humidity has been adjusted at various values in order to demonstrate the crucial role of humidity in the gas phase for the nanofilament synthesis. The novel GNFs show a strong luminescence emission in the ultra-violet and light blue region. In addition, a self-cleaning and superhydrophobic properties could be introduced in the luminescent GNF nanofilaments by simple treatment with silane molecules.     

[Nb@Ge13/14]3−: New Family Members of Ge-Based Intermetalloid Clusters

During the past two decades, single-atom-centered medium-sized germanium clusters [M@Ge_n] (M=transition metals, n>12) have been extensively explored, both from theoretical perspectives and experimental gas-phase syntheses. However, the actual structural arrangements of the Ge₁₃ and Ge₁₄ endohedral cages are still ambiguous and have long remained an unresolved problem for experimental implementation. In this work, we successfully synthesize 13-/14-vertex Ge clusters [Nb@Ge₁₃]³⁻ ( 1 ) and [Nb@Ge₁₄]³⁻ ( 2 ), which are structurally characterized and exhibit unprecedented topologies, neither classical deltahedra nor 3-connected polyhedral structures. Theoretical analysis indicates that the major stabilization of the Ge backbones arises due to the substantial interaction of Ge 4p-AOs with the endohedral Nb 4d-AOs through three/four-center two-electron bonds with an enhanced electron density accumulated over the shortest Nb−Ge13 contact in 1 . Low occupancies of the direct two-center two-electron (2c–2e) Nb−Ge and Ge−Ge σ bonds point to a considerable degree of electron delocalization over the Ge cages revealing their electron deficiency.     

Synthesis,characterization and redox properties of Ar–C=N→Ge←N=C–Ar containing system

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Crystalline Boragermenes

Boragermene 3 featuring a double bond between the Ge and dicoordinate B atoms has been synthesized for the first time by reacting the cyclic (alkyl)(boryl)germylene–PMe₃ adduct 1 with Cl₂BN(SiMe₃)₂ followed by reductive dehalogenation with KC₈. Addition of a Lewis base (^MeNHC) to 3 leads to the formation of the corresponding adduct 4 , which shows double bond character between the Ge and tricoordinate B atoms. Compound 3 undergoes hydrogenation with H₂ concomitant with a complete scission of the Ge=B bond.     

Synthesis of Organosilyl-Functionalized Cage-Type Germanoxanes Containing Fluoride Ions

Eight corners of a double-four ring cage-type germanoxane, containing a fluoride ion, were successfully silylated by the combination of chlorosilanes and silazanes. Three different silyl groups, trimethylsilyl, dimethylsilyl, and dimethylvinylsilyl, were attached on the corners of germanoxane cage. The solubility and reactivity of the cage modified with dimethylvinylsilyl groups were significantly increased, allowing for further reaction. Hydrosilylation reaction between dimethylvinylsilylated cage geramanoxanes and dimethylsilylated cage siloxanes afforded porous solids. Functionalization of the corners of germanoxanes with silyl groups should provide valuable building blocks in various functional materials.     

Study of Ge epitaxial growth on Si substrates by cluster beam deposition

Ge epitaxial layers with reasonable quality were grown on Si (1 1 1) substrates by cluster beam deposition (CBD) process. Molecular dynamics study of the low energy Ge clusters deposition process utilizing the Stillinger–Weber two- and three-body interaction potentials was carried out to compare the experimental results. Both experimental and simulation results prove that the substrate temperature plays a dominant role in the epitaxial growth of Ge films in CBD process. The influence mechanisms of temperature are discussed.