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101.
Skin Bond Electron Relaxation Dynamics of Germanium Manipulated by Interactions with H2, O2, H2O,H2O2, HF,and Au
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Lihong Wu Maolin Bo Yongling Guo Prof. Yan Wang Can Li Prof. Yongli Huang Prof. Chang Q Sun 《Chemphyschem》2016,17(2):310-316
Although germanium performs amazingly well at sites surrounding hetero‐coordinated impurities and under‐coordinated defects or skins with unusual properties, having important impact on electronic and optical devices, understanding the behavior of the local bonds and electrons at such sites remains a great challenge. Here we show that a combination of density functional theory calculations, zone‐resolved X‐ray photoelectron spectroscopy, and bond order length strength correlation mechanism has enabled us to clarify the physical origin of the Ge 3d core‐level shift for the under‐coordinated (111) and (100) skin with and without hetero‐coordinated H2, O2, H2O, H2O2, HF impurities. The Ge 3d level shifts from 27.579 (for an isolated atom) by 1.381 to 28.960 eV upon bulk formation. Atomic under‐coordination shifts the binding energy further to 29.823 eV for the (001) and to 29.713 eV for the (111) monolayer skin. Addition of O2, HF, H2O, H2O2 and Au impurities results in quantum entrapment by different amounts, but H adsorption leads to polarization. 相似文献
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Yu Gao Xiaodong Pi Xunhai Wang Tianhao Yuan Qingjun Jiang Jianguo Lu Deren Yang 《Particle & Particle Systems Characterization》2016,33(5):271-278
The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs. 相似文献
104.
以目前国际上极为活跃开展的暗物质探测、无中微子双 衰变研究为例,评述了高纯锗探测器的重要性及其广泛的应用前景。介绍了己开展的高纯锗单晶、探测器制备的关键技术研究进展:合作单位已研制出了用于高纯锗单晶材料制备的区熔炉、单晶炉;并制备出直径为20 50 cm、纯度为12N(< 41011 atoms/cm3)、位错< 5000 atoms/cm2 的锗单晶;掌握了高纯锗探测器(平面型、同轴型)制备的关键技术,用进口高纯锗单晶材料制备出的同轴型高纯锗探测器对射线的能量分辨率及探测效率均达到进口产品指标,使用自制的12N 高纯锗单晶材料己制备出平面型高纯锗探测器。呼吁加速高纯锗研制的自主创新步伐,尽早实现其国产化目标。The article reviews importance and wide applications of HPGe detector, especially the application on the dark matter search experiment and double beta decay experiment. The research progress on the Highpurity germanium single crystal and HPGe detector in China has been introduced. The cooperation partner developed new type zone-refining furnace and single crystal furnace. The ultra-purity germanium single crystal with 20~50 cm, purity up to 12N(net impurity concentration is less than 41011 atoms/cm3), and dislocation less than 5 000 /cm3 was prepared. The key technologies for preparing planar and coaxial HPGe detector were mastered. The coaxial detector, which has been made of imported ultra-purity germanium single crystal has excellent energy resolution and efficiency as the imported commercial detector. The planar detector using selfmade germanium single crystal was also successfully manufactured. The research group appeals for speeding up the pace of independent innovation on the high-purity germanium, and achieving the high-purity germanium localization as soon as possible. 相似文献
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The impact of a rotating magnetic field (RMF) on the axial segregation in Vertical Gradient Freeze (VGF) grown, Ga doped germanium is investigated. Growth experiments were performed using the VGF‐RMF as well as the conventional VGF technique. Carrier concentration profiles characterising the Ga segregation were measured by the Spreading Resistance method and calibrated using Hall values of carrier concentration and mobility. The Ga concentration rises more gradually under RMF action, i.e., the dopant segregation is significantly reduced by the rotating field. This effect is attributed to a better mixing of the melt. Numerical results on the flow velocity confirm this explanation. The RMF induced flow is much more intense than the natural buoyant convection due to the radial temperature gradient and leads to a pronounced decrease of the effective partition coefficient keff. In the early stages of growth a keff value close to k0 was obtained, i.e., the gallium was almost homogeneously distributed within the melt. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
110.
V. V. Litvinov A. A. Klechko J. L. Lindstrom V. P. Markevich L. I. Murin 《Journal of Applied Spectroscopy》2000,67(5):904-909
The vibrational absorption bands associated with some types of double thermal donors (TD) in Ge enriched with the oxygen isotopes 16O and 18O have been identified. The thermal donors were formed during heat treatment of Ge:O crystals at 300 and 350°C. Absorption spectra were measured at room temperature and at 10 K. The formation of the thermal donors was accompanied by the appearance of three absorption bands, which in the Ge:16O spectra at room temperature are located at 600, 740, and 780 cm–1. In low-temperature measurements, the bands at 600 and 780 cm–1 exhibited splitting into series of narrow lines (up to 9) associated with some types of thermal donors (TD1–TD9). The absorption spectra measured at 10 K after different cooling conditions display bistability of the first four types of thermal donors (TD1–TD4). In the samples cooled by illumination with light in the region of frequencies of the fundamental absorption of Ge, pairs of lines are observed that belong to the bistable thermal donors in the helium-like configuration of double donors (DD). After cooling the samples in the dark, these pairs of lines are replaced by three new bands, which belong to local vibrational modes of bistable thermal donors in the low-energy neutral configuration. Based on the isotopic shift of the local vibrational modes of the thermal donors in Ge:16O and Ge:18O, a rigorous proof of the oxygen atoms entering into the composition of thermal donors is obtained. 相似文献