Microwave–assisted synthesis of <Emphasis Type="Italic">submicrometer</Emphasis> GaO(OH) and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> rods

Submicrometer sized gallium oxide hydroxide (GaO(OH)) and gallium oxide (Ga₂O₃) rods have been successfully fabricated on a large scale by refluxing an aqueous solution of Ga(NO₃)₃ and NH₄OH in a simple domestic microwave oven (DMO). The structures, morphologies, compositions and physical properties of the as–synthesized and calcined products have been characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), selected area energy dispersive X-ray spectroscopy (SAEDS), thermo gravimetric analysis (TGA), differential scanning calorimetry (DSC), and energy dispersive X-ray (EDX) analysis. TEM images show that submicrometer sized as–synthesized Ga O(OH) rods have diameters of 0.3–0.5 m and lengths of 3.2–3.5 m. The calcined product consists of submicrometer rods with diameters of 0.4–0.5 m and lengths of 5–5.5 m. XRD, EDX and SAED analysis together indicate that the as–synthesized product has an orthorhombic gallium oxide hydroxide (GaO(OH)) crystal structure, and that the calcined product is rhombohedral Ga₂O₃. A possible mechanism for the formation of submicrometer sized GaO(OH) rods is discussed briefly.     

The Reaction Of Metal Trialkyls With Benzo[H]Quinolin-10-ol

IntroductionThechemistryoforganoaluminum,organogalliumandorganoindiumcomplexeshasattractedmuchat'tentionduenotonlytotheirinterestingstructuralandchemicalpropertiesbutalsotheirapplicationinsemiconductormaterialsl-5.InthecourseofourstudiesonexploringvolatileMOCVDprecursorsthathavethepropertiesoflowertoxicityandhigherstability,wehaverecentlyreportedonthesynthesisandcharacterizationofintermolecularadducts'-',novelbondingmodecomplexes",',andthecomplexesinwhichN/Omixed-donorcrownethersasligands'l'…     

Synergetic effects during sputter-assisted depth profiling: Growth-dominated topography development on InP and a model of the atomic mechanism

Growth-dominated extreme topography development on ionbombarded wafers of InP is reported and is explained in terms of the micro region model presented in summary form. This model postulates the existence of an ion-bombardment-produced ensemble of crystallites and non-crystalline aggregations of atoms (composed of the substrate material, of dopant and of oxygen from the native oxide layer) where the majority of InP micro regions is so small (nanometer dimensions) that most interstitials created in collision events between bombarding ions and atoms of the micro region can reach an interfacial boundary rather than recombine with a vacancy from the same or another collision event. These atoms are then transported via interfacial boundaries and over the surface to screw dislocations where crystal stubs proceed to grow until the damage rate by ion bombardment overtakes the growth rate. Ion-bombardment-induced compressive stresses favour diffusion towards the surface. Temperature transients within micro regions assist both interfacial diffusion and damage repair. The topography is a result of competition between growth and sputtering. Different growth rates cause different topographies. The development of an extreme topography can be suppressed by oxygen flooding of the sputtered surface, by simultaneous electron beam scanning, as well as by Cs⁺ ion bombardment.     

An IR Spectroscopic Investigation of Nanostructured AlN and GaN Powder Surfaces

By combining the results of IR spectroscopy experiments, both in the transmission and diffuse reflectance modes, with data obtained by HRTEM, XRD and XPS an overall picture of AlN and GaN nanoparticle surface structures and functionality were deduced. The surface species from the IR data analysis indicated that the nanostructured AlN powder surfaces had acidic and weak basic sites in the form of Al³⁺ and Al₃N^–, respectively. Also present were -OH, -NH₂, and -NH. For GaN, the bulk core of the particle had a zincblendel (FCC) structure with nitrogen vacancies, and the only functionality detected was Ga–H. The surface of the particles had a wurtzite(HCP) structure, with abundant NH and NH₂ groups as well as OH and Ga³⁺ functionalities.     

Effect of gallium, aluminium, and chromium on silica supported V-Mg-O catalysts during oxidative dehydrogenation of propane: Kinetic study

The oxidative dehydrogenation （ODH） of propane was conducted on gallium, aluminum, and chromium doped Si30VMgO catalysts. On doping, the concentrations of the phases responsible for the activity and selectivity increased in their concentrations. The reaction studies were conducted in a tubular steel reactor at temperatures of 753, 783, 813, and 843 K and atmospheric pressure. The total flow rates of the feed were chosen as 30, 40, 50, and 60 ml/min. The propane to oxygen ratios were chosen at 1 ： 1, 2 ： 1, and 3 ： 1, respectively. The effect of various dopants on the activity and selectivity of the catalysts was studied. Deactivation studies were conducted over all the catalysts. The kinetic data were analyzed in terms of power law models and Langmuir-Hinshelwood （LH） models. The kinetic data results were analyzed by comparing the effect of dopants. Statistical model discrimination was done for the proposed models. AIC and BIC criteria were used for discrimination of the models.     

Reducing Ga?H and Ga?C Bonds in Close Proximity to Oxidizing Peroxo Groups: Conflicting Properties in Single Molecules

Treatment of [Li(H₂Ga{CH(SiMe₃)₂}₂)] ? 2 OEt₂ ( 1? 2 OEt₂) with two equivalents of tert‐butyl hydrogen peroxide, H‐O‐O‐CMe₃, afforded the organogallium peroxide [({(Me₃Si)₂HC}₂Ga(OH)(OOCMe₃)Li)₂] ( 3 ), which possesses oxidizing peroxo groups in close proximity to reducing Ga? C bonds. The lithium atoms of the dimeric formula units are coordinated by both oxygen atoms of the peroxides and by two hydroxo groups. The cleavage of the Ga? C bond was not observed, even when an excess of H‐O‐O‐CMe₃ was applied. Instead, the adduct [{(Me₃Si)₂HC}₂Ga(OH)(OOCMe₃)₂Li₂(HOOCMe₃)] ( 4 ) was isolated, which has an intact H‐O‐O‐CMe₃ molecule terminally attached to lithium. A similar structural motif was found for the compound [(LiOOCMe₃)₂(HOOCMe₃)₂] ( 5 ). The trihydrido gallanate [Li(H₃Ga? {CH(SiMe₃)₂})] ? OEt₂ ( 2 ) yielded the unique peroxide [({(Me₃Si)₂HC}? Ga(H)(OOCMe₃)₂Li)₂] ( 6 ) under similar conditions that possesses Ga? C and even more reactive Ga? H bonds beside peroxo groups. It decomposed at room temperature by the insertion of oxygen atoms into the Ga? H bonds and the formation of [({(Me₃Si)₂HC}? Ga(OH)(OCMe₃)(OOCMe₃)Li)₂] ( 7 ), which was isolated in a low yield. Further decomposition gave the complete degradation of all peroxo groups with the formation of a relatively complicated Li₄Ga₄O₈ cage ( 8 ).     

Growth and raman scattering of aluminium gallium orthophosphate piezoelectric crystals

A new series of non-ferroelectric crystals, the piezoelectric solid solution aluminium gallium orthophosphate Al_1-xGa_xPO₄ (AGP, 0 < x < 1) system has been successfully developed by a hydrothermal method. The AGP crystal with X = 0.10 shows a phase transition temperature T_−β = 587 ± 3 °C with a cell parameters A = b = 0.49386(3) and C = 1.09563(2) nm. Raman spectra including directional dispersion in AGP are similar to those from -AIPO4 and -quartz crystals, indicating all of them belong to an isomorphic family, the short-range interaction being dominant in AGP. Comparison with -AIPO4 crystals, there exists an apparent red shift of the mode frequency and a smaller TO/LO mode splitting of the E species in the AGP crystals.     

Cyclic voltammetric studies on gallium film electrodes in alkaline media

Using cyclic voltammetric techniques the electrochemical behaviour of gallium in alkali media has been investigated. Three anodic peaks, one cathodic peak, and a secondary anodic peak—an observation hitherto unreported—are obtained. Detailed analyses of these various stages of oxidation and reduction based on their peak potential and peak current characteristics have revealed the nature of the underlying electrochemical reactions.     

Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers

The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the magnesium-related level on the transport properties. Two peaks, whose height and position depend on the measurement temperature, are observed in the admittance curves (G/ω versus frequency) of the Mg-doped samples, whereas only one peak appears in undoped samples. The study of the frequency dependence of the impedance, with a model including the two metallic Au/GaN junctions, the GaN layer itself, shows that, besides the effect of the differential resistance of the layer which plays a role in both sample types, the presence of a Mg-related deep level contributes to the observed variations of the peaks in the admittance curves of the p-doped samples. Results of a theoretical steady-state and small-signal analysis based on numerical modelling of the Au/GaN/Au heterostructure complete our analysis.