Direct Comparison of Subvalent,Polycationic Group 13 Cluster Compounds: Lessons learned on Isoelectronic DMPE Substituted Gallium and Indium Tetracation Salts

The tetracationic, univalent cluster compounds [{M(dmpe)}₄]⁴⁺ (M=Ga, In; dmpe=bis(dimethylphosphino)ethane) were synthesized as their pf salts ([pf]⁻=[Al(OR^F)₄]⁻; R^F=C(CF₃)₃). The four-membered ring in [{M(dmpe)}₄]⁴⁺ is slightly puckered for M=Ga and almost square planar for M=In. Yet, although structurally similar, only the gallium cluster is prevalent in solution, while the indium cluster forms temperature dependent equilibria that include even the monomeric cation [In(dmpe)]⁺. This system is the first report of one and the same ligand inducing formation of isoelectronic and isostructural gallium/indium cluster cations. The system allows to study systematically analogies and differences with thermodynamic considerations and bonding analyses, but also to outline perspectives for bond activation using cationic, subvalent group 13 clusters.     

A Simple Homoleptic Gallium(I) Olefin Complex: Mimicking Transition‐Metal Chemistry at a Main‐Group Metal?

The earth‐metal olefin complex [Ga ^I (COD)₂]⁺[Al(OR^F)₄]^? (COD=1,5‐cyclooctadiene; R^F=C(CF₃)₃) constitutes the first homoleptic olefin complex of any main‐group metal accessible as a bulk compound. It is straight forward to prepare in good yield and constitutes an olefin complex of a main‐group metal that—similar to many transition‐metals—may adopt the +1 and +3 oxidation states opening potential applications. Crystallographic‐, vibrational‐ and computational investigations give an insight to the atypical bonding between an olefin and a main‐group metal. They are compared to classical transition‐metal relatives.     

A Molecular Analogue of the C−H Activation Intermediate of the Silica-Supported Ga(III) Single-Site Propane Dehydrogenation Catalyst: Structure and XANES Signature

Propane dehydrogenation is an important field of research due to an increasing world-wide demand of propene while classical production routes through naphtha cracking are in decline. In that context, silica-supported Ga(III) sites, synthesized from surface organometallic chemistry principles, show high selectivity and stability in the propane dehydrogenation reaction. This performance is in significant contrast to the reported fast deactivation and lower selectivity of most Ga₂O₃ and CrO₃ based materials. The Ga-catalyzed propane dehydrogenation reaction is proposed to proceed through the formation of Ga alkyl intermediates for which it would be desirable to have detailed structural and spectroscopic information. Here, we prepare a consistent series of Ga(III) molecular complexes with varying numbers of alkyl and siloxide ligands; they are characterized by single crystal X-Ray diffraction and X-Ray Absorption Near Edge Structure analysis, which is known to be highly sensitive to the Ga coordination environment. We report in particular the structure and the spectroscopic signatures of [Ga(ⁱPr)(OSi(O^tBu)₃)₂(HOSi(O^tBu)₃)], a molecular mimic of the key proposed reaction intermediates in the Ga-catalyzed PDH reaction.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Synthesis,Structure, and Reactivity of Diazene Adducts: Isolation of iso‐Diazene Stabilized as a Borane Adduct

This work describes the synthesis and full characterization of a series of GaCl₃ and B(C₆F₅)₃ adducts of diazenes R¹?N?N?R² (R¹=R²=Me₃Si, Ph; R¹=Me₃Si, R²=Ph). Trans‐Ph?N?N?Ph forms a stable adduct with GaCl₃, whereas no adduct, but instead a frustrated Lewis acid–base pair is formed with B(C₆F₅)₃. The cis‐Ph?N?N?Ph ? B(C₆F₅)₃ adduct could only be isolated when UV light was used, which triggers the isomerization from trans‐ to cis‐Ph?N?N?Ph, which provides more space for the bulky borane. Treatment of trans‐Ph?N?N?SiMe₃ with GaCl₃ led to the expected trans‐Ph?N?N?SiMe₃ ? GaCl₃ adduct but the reaction with B(C₆F₅)₃ triggered a 1,2‐Me₃Si shift, which resulted in the formation of a highly labile iso‐diazene, Me₃Si(Ph)N?N; stabilized as a B(C₆F₅)₃ adduct. Trans‐Me₃Si?N?N?SiMe₃ forms a labile cis‐Me₃Si?N?N?SiMe₃ ? B(C₆F₅)₃ adduct, which isomerizes to give the transient iso‐diazene species (Me₃Si)₂N?N ? B(C₆F₅)₃ upon heating. Both iso‐diazene species insert easily into one B?C bond of B(C₆F₅)₃ to afford hydrazinoboranes. All new compounds were fully characterized by means of X‐ray crystallography, vibrational spectroscopy, CHN analysis, and NMR spectroscopy. All compounds were further investigated by DFT and the bonding situation was assessed by natural bond orbital (NBO) analysis.     

低温热分析标准物质的研制

研制了两种0~100℃热分析标准物质,分别为金属镓和水杨酸苯酯标准物质。研制的标准物质具有良好的均匀性和稳定性,采用与NIST,LGC相应标准物质比较的方法定值。NIST为SRM 2234镓,其定值采用288.6~314.35 K范围内的绝热热量计测得温度及热量值;LGC用绝热法为水杨酸苯酯的熔化温度和熔化热定值,两种方法都可以直接溯源至SI单位。对定值结果的不确定度进行了分析和评定。镓和水杨酸苯酯标准物质的熔化温度分别为(29.77±0.20)℃(k=2),(41.81±0.34)℃(k=2);熔化热分别为(80.52±0.48)J/g(k=2),(88.94±0.62)J/g(k=2)。研制的两种标准物质满足国家标准物质的技术要求,申报已获批准。     

Platinum‐Promoted Ga/Al2O3 as Highly Active,Selective, and Stable Catalyst for the Dehydrogenation of Propane

A novel catalyst material for the selective dehydrogenation of propane is presented. The catalyst consists of 1000 ppm Pt, 3 wt % Ga, and 0.25 wt % K supported on alumina. We observed a synergy between Ga and Pt, resulting in a highly active and stable catalyst. Additionally, we propose a bifunctional active phase, in which coordinately unsaturated Ga³⁺ species are the active species and where Pt functions as a promoter.     

Mechanism of Host–Guest Complex Formation and Identification of Intermediates through NMR Titration and Diffusion NMR Spectroscopy

The formation of host–guest (H‐G) complexes between 1,8‐bis[(diethylgallanyl)ethynyl]anthracene (H) and the N‐heterocycles pyridine and pyrimidine (G) was studied in solution using a combination of NMR titration and diffusion NMR experiments. For the latter, diffusion coefficients of potential host–guest structures in solution were compared with those of tailor‐made reference compounds of similar shape (synthesized and characterized by NMR, HRMS, and in part XRD). Highly dynamic behavior was observed in both cases, but with different host–guest species and equilibria. With increasing concentrations of the pyridine guest, the equilibrium H₂?H₂κ¹‐G₁?HG₂ is observed (in the second step a host dimer coordinates one guest molecule); for pyrimidine the equilibrium H₂→H₁κ²‐G₁?HG₂ is observed (the formation of a 1:1 aggregate is the second step).     

Tetracyanoquinodimethane Reduction by Complexed Guanidinyl‐Functionalized Aromatic Compounds

In this work, we report on the reduction of tetracyanoquinodimethane (TCNQ) with dicationic complexes of guanidinyl‐functionalized aromatic (GFA) electron donors. In contrast to reduction with free GFAs, milder reduction conditions were achieved, and this led to semiconducting materials with extended TCNQ π stacking. The charge on the TCNQ units was estimated from the structural data obtained by single‐crystal X‐ray diffraction analysis and from IR spectroscopic data. The electrical conductivity was studied and the activation energy of the semiconducting materials was estimated from the temperature dependence of the conductivity.     

中空核壳结构Ni1.2Co0.8P@N-C钠离子电池负极材料的制备及拉曼研究

本文设计制备了一种新型的氮掺杂碳包覆镍钴双金属磷化物中空核壳结构纳米立方体(Ni_1.2Co_0.8P@N-C)作为钠离子电池负极材料. 该材料以镍钴类普鲁士蓝(PBA)纳米粒子为模板,先后经水热法、磷化法和高温碳化处理后合成. 将其作为活性材料应用在钠离子电池中,该材料展现出优异的循环稳定性,当以100 mA·g^-1的电流密度循环至200圈时,该材料的库仑效率保持在99.3%. 进一步通过对不同电位下Ni_1.2Co_0.8P@N-C材料中的氮掺杂碳进行原位拉曼光谱测试,结果显示钠离子在氮掺杂的碳壳中的脱嵌行为具有较大程度的可逆性,研究结果对钠离子电池充放电过程的后续电化学研究提供了有价值的信息.