界面形核时间对GaN薄膜晶体质量的影响

利用金属有机化学气相沉积技术系统研究了界面形核时间对c面蓝宝石衬底上外延生长GaN薄膜晶体质量的影响机理. 用原子力显微镜、扫描电子显微镜、高分辨X射线衍射仪以及光致发光光谱仪表征材料的晶体质量以及光学性质. 随着形核时间的延长, 退火后形成的形核岛密度减小、尺寸增大、均匀性变差, 使得形核岛合并过程中产生的界面数量先减小后增大, 导致GaN外延层的螺位错和刃位错密度先减小后增大, 这与室温光致发光光谱中得到的带边发光峰与黄带发光峰的比值先增大后降低一致. 研究结果表明, 外延生长过程中, 界面形核时间会对GaN薄膜中的位错演变施加巨大影响, 从而导致GaN外延层的晶体质量以及光学性质的差异.     

p型层结构与掺杂对GaInN发光二极管正向电压温度特性的影响

在温度变化时, 如果GaInN发光二极管能够保持相对稳定的工作电压对其实际应用具有重要意义. 本文通过金属有机化学气相沉积生长了一系列包含不同有源区结构、不同p型层结构以及不同掺杂浓度纵向分布的样品, 并对其在不同温度区间内正向电压随温度变化的斜率(dV/dT)进行了研究. 结果表明: 1)有源区中包括插入层设计、量子阱结构以及发光波长等因素的变化对正向电压随温度变化特性影响很小; 2)影响常温区间(300 K± 50 K)正向电压随温度变化斜率的最主要因素为p-AlGaN 电子阻挡层起始生长阶段的掺杂形貌, 具有p-AlGaN陡掺界面的样品电压变化斜率为-1.3 mV·K^-1, 与理论极限值 -1.2 mV·K^-1十分接近; 3) p-GaN主段层的掺Mg浓度对低温区间(<200 K)的正向电压随温度变化斜率有直接影响, 掺Mg浓度越低则dV/dT斜率越大. 以上现象归因于在不同温度区间, p-AlGaN 以及p-GaN 发生Mg受主冻结效应的程度主要取决于各自的掺杂浓度. 因此Mg掺杂浓度纵向分布不同的样品在不同的温度区间具有不同的串联电阻, 最终表现为差异很大的正向电压温度特性.     

Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers

The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300–350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.1–1.2 eV, which indicates the effective incorporation of Mn²⁺ ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ∼85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes.     

Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy

The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5–6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures.     

Large‐scale synthesis of submicron gallium oxide hydrate rods and their optical and electrochemical properties

Large‐scale submicron gallium oxide hydrate (GaOOH) rods have been synthesized by a simple hydrothermal process and their optical, electrochemical properties have been analyzed. The diameter of the GaOOH nanorods with good single crystalline structure is 80‐800 nm and length of less than 4 μm. The tips of the GaOOH structures are composed of nanorods with the diameter of less than 10 nm and length of more than 100 nm. Hydrothermal temperature, time and the Ga‐contained starting materials have important roles on the formation and growth of submicron GaOOH rods. The submicron GaOOH rods exhibit good UV‐vis absorption ability. The electrochemical analysis shows that the submicron GaOOH rods have good detecting ability for ascorbic acid and cysteine in PBS and NaCl solution exhibiting promising potential for electrochemical sensing application. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A Triazacyclononane‐Based Bifunctional Phosphinate Ligand for the Preparation of Multimeric 68Ga Tracers for Positron Emission Tomography

For application in positron emission tomography (PET), PrP9 , a N,N′,N′′‐trisubstituted triazacyclononane with methyl(2‐carboxyethyl)phosphinic acid pendant arms, was developed as ⁶⁸Ga³⁺ complexing agent. The synthesis is short and inexpensive. Ga^III and Fe^III complexes of PrP9 were characterized by single‐crystal X‐ray diffraction. Stepwise protonation constants and thermodynamic stabilities of metal complexes were determined by potentiometry. The Ga^III complex possesses a high thermodynamic stability (log K_[GaL]=26.24) and a high degree of kinetic inertness. ⁶⁸Ga labeling of PrP9 is possible at ambient temperature and in a wide pH range, also at pH values as low as 1. This means that for the first time, the neat eluate of a TiO₂‐based ⁶⁸Ge/⁶⁸Ga generator (typically consisting of 0.1 M HCl) can be directly used for labeling purposes. The rate of ⁶⁸Ga activity incorporation at pH 3.3 and 20 °C is higher than for the established chelators DOTA and NOTA. Tris‐amides of PrP9 with amino acid esters were synthesized to act as models for multimeric peptide conjugates. These conjugates exhibit radiolabeling properties similar to those of unsubstituted PrP9 .     

Dialkylaluminium‐, ‐Gallium‐, and ‐Indium‐Based Poly‐Lewis Acids with a 1,8‐Diethynylanthracene Backbone

Potential host systems based on a rigid 1,8‐diethynylanthracendiyl backbone were synthesised by treatment of 1,8‐diethynylanthracene with the Group 13 trialkyls AlMe₃, GaMe₃, InMe₃, AlEt₃ and GaEt₃. The resulting products were characterised by IR and multinuclear NMR spectroscopy, elemental analyses and determination of their crystal structures by X‐ray diffraction. The compounds are dimeric in the solid state and comprise two M₂C₂ heterocycles. Depending on the steric demand of the alkyl substituents at the metal atom, different types of binding modes were observed, which can be classified to lie between the ideals of side‐on coordination with almost linear primary M? C?C units and the 3c–2e coordination with symmetrically bridging alkynyl units in M‐C‐M bonds. As a solution in THF the dimers are broken into monomers and some are found to undergo ligand scrambling reactions.     

Preferential crystallographic alignment in polycrystalline MnP

The existence of preferential crystallographic alignment in hot pressed and die upset manganese phosphide (MnP) was investigated using magnetic measurements and electron backscatter diffraction (EBSD). Pole figures calculated from the EBSD data show that die upsetting causes the 〈1 1 0〉 directions to align preferentially along the die upset (DU) direction with the 〈0 0 1〉 direction preferentially perpendicular to the DU direction. Magnetic measurements show that the die upsetting can reduce the saturation field relative to that of a similar sample with randomly oriented grains. Since the low-field magnetocaloric effect in single crystals of MnP has been shown to be greatest along the 〈0 1 0〉 direction and smallest along the 〈1 0 0〉 direction, this technique offers a means to achieve the advantages of single crystal alignment with the economy of using bulk processing techniques on polycrystalline material. The peak magnetic entropy change measured with the field applied along the DU direction in the DU sample was 3%, 5%, and 8% greater than the peak entropy change of a randomly oriented powder at fields of 2.0, 1.0, and 0.5 T, respectively.     

Bridging the Gap between Coordination and Cluster Compounds: Unusual Bonding Modes for Zinc

Inner virtue : The reaction of [Mo⁰(GaCp*)₆] with ZnMe₂ yields the novel multinuclear zinc system [MoZn₁₂Me₉Cp*₃] which geometrically resembles a classical Wade–Mingos cluster (with an interstitial molybdenum atom, see picture). In reality, its electronic structure features little direct Zn? Zn bonding, relying instead on Mo? Zn three‐center, two‐electron bonds spanning the body diagonals of the approximately icosahedral framework.