Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27?GPa and 900?K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2?GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa)?=?22.6???0.0014?×?T (K).     

以硫酸镓/凹凸棒固体酸为催化剂的肉桂酸乙酯合成综合制备实验设计

利用自制硫酸镓/凹凸棒固体酸催化剂代替浓硫酸,设计了肉桂酸乙酯合成综合制备实验,该实验由肉桂酸制备、硫酸镓/凹凸棒固体酸催化剂制备、肉桂酸乙酯合成、肉桂酸乙酯酯化率测定等部分组成。当肉桂酸乙酯合成条件为肉桂酸7.5 g、无水乙醇18 mL、反应温度120 ℃、反应时间3.0 h时,肉桂酸乙酯的酯化率不低于85%,所制催化剂经7次重复使用,肉桂酸乙酯的酯化率仍达42.3%。实验克服了浓硫酸催化法存在的缺点,具备显著的综合实验特征。     

第一性原理比较研究MnPm(M=Al,Ga,In,2≤n+m≤3)团簇

利用密度泛函理论对MnPm (M=Al,Ga,and In,2≤n+m≤3)团簇的几何和电子结构性质及稳定性进行了研究.结果表明,三原子的MnPm团簇是二重态,而单体则是三重态.富P的MP2团簇是具有C2V对称性的等腰三角形结构,而富M的M2P团簇则是具有Cs对称性的三角形结构.在三原子磷化物团簇中,MP2团簇比M2P团簇稳定,而后者中M-P键的强度比前者强.对于这些小的磷化物团簇,电离势高于裂解能,表明裂解比电离占优势.Ga2P比Al2P和In2P的HOMO-LUMO能隙和电离势都高,归咎于在富金属的M2P团簇中,相对较强的Ga-P键.     

溶胶-凝胶法制备MoP/SiO2催化剂加氢脱硫催化活性的研究

以正硅酸乙酯为硅源,以钼酸铵和磷酸二氢铵为钼源和磷源,采用溶胶-凝胶法,经干燥、焙烧,程序升温还原制备得到二氧化硅负载磷化钼(MoP)催化剂。以噻吩、二苯并噻吩为模型化合物,对负载催化剂的加氢脱硫活性进行评价,考察了负载量、反应压力、反应温度等因素对催化活性的影响。实验结果表明,MoP/SiO₂催化剂Mo的最佳负载量为20%,升高反应压力和温度均有利于提高二苯并噻吩的转化率,但降低了产物中联苯的含量。     

Oxidative Addition Reactions of Element–Hydrogen Bonds with Different Polarities to a Gallium(I) Compound

The gallium(I) derivative [Ga({N(dipp)CMe}₂CH)] ( 1 ; dipp=2,6‐diisopropylphenyl) undergoes facile oxidative addition reactions with various element–hydrogen bonds including N? H, P? H, O? H, Sn? H, and H? H bonds. This was demonstrated by its reaction with triphenyltin hydride, ethanol, water, diethylamine, diphenylphosphane, and dihydrogen. All products were characterized by means of single‐crystal X‐ray structure determination, NMR spectroscopy, IR spectroscopy, and mass spectrometry.     

On the Track of Novel Triel‐Stabilised Silylaminoiminoborenes

Borenes and boranes : Silylaminoiminoborenes, such as depicted, were isolated after treatment of halogen triels with silylaminofluoroboranes. In addition, novel aryl‐ and silyl‐substituted diaminofluoroboranes were also prepared in order to substantiate this reaction route.

     

Planar or quasi-planar octa- and ennea-coordinate aluminum and gallium in boron rings

An ab initio theoretical investigation has been performed on planar or quasi-planar octa-and ennea-coordinate Al and Ga centered in X@B8- and X@B9 (X=Al, Ga). These high symmetry molecular wheels all turned out to be true minima of the systems and σ+π double aromatic in nature, similar to the previously characterized D8h B@B8- both electronically and geometrically. Adiabatic and vertical detachment energies of the anions and the ionization potentials of the neutrals have been calculated to aid their eventua...     

Addition of Hydrogen or Ammonia to a Low‐Valent Group 13 Metal Species at 25 °C and 1 Atmosphere

Mild‐mannered : The low‐valent aryl gallium(I) species :GaAr′ (Ar′=2,6‐(2,6‐iPr₂C₆H₃)₂C₆H₃) undergoes addition to H₂ or NH₃ at room temperature and one atmosphere of pressure to afford 1 or 2 (see scheme), which were characterized by X‐ray crystallography and NMR and IR spectroscopy.

     

磁控溅射技术室温生长氢化ZnO∶Ga薄膜及其特性研究

采用直流脉冲磁控溅射方法,在室温下生长氢化Ga掺杂ZnO薄膜(GZO/H),并通过湿法后腐蚀技术获得绒面结构.研究了室温下H2流量对薄膜结构、光电性能及表面形貌的影响.实验表明,氢化GZO(GZO/H)薄膜具有良好的(002)晶面择优取向生长,引入适当流量的H2可以有效提高薄膜的电学特性,GZO/H薄膜具有更低的电阻率以及较高的迁移率和载流子浓度.当通入H2流量为6 sccm时,薄膜电阻率为6.8 ×10-4 Ω·cm,Hall迁移率达34.2 cm2/Ⅴ·s,制备的GZO/H薄膜可见光区域平均透过率优于85;.此外,研究了H2流量对湿法腐蚀后绒面GZO/H薄膜表面形貌的影响,提出了一种薄膜绒面结构形成过程模型.