Crystallographic report: [1,3‐Di(mestityl)imidazol‐2‐ylidene]gallium iodide dihydride

The structure of the N‐heterocyclic gallium hydride complex, [GaH₂I{CN(Mes)C₂H₂N(Mes)}], Mes = mesityl, shows both hydride ligands to be bonded to the distorted tetrahedral gallium centre. Copyright © 2003 John Wiley & Sons, Ltd.     

Two Beam Coupling in Semi-Insulating GaN Film Using Electroabsorption Effect

The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in the UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling.     

Photoluminescence of gallium arsenide electron-irradiated at 20 K

The processes of defect formation in single crystals of gallium arsenide electron-irradiated at cryogenic temperatures (∼20 K) have been investigated by the luminescence method. It is shown that at such temperatures the primary radiation-induced defects, in particular, intrinsic interstitial atoms, can migrate in a crystal and form complexes with their participation. Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 122–124, January–February, 1997.     

Single and double ionization of gallium by electron impact

Electron impact single and double ionization cross sections of gallium have been calculated in the binary encounter approximation using accurate expression for σ_Δ;E including exchange and interference as given by Vriens and Hartree-Fock velocity distributions for the target electrons throughout the calculations. It is concluded that the ionization of 3d shell contributes partly to single ionization and partly to double ionization. The results so obtained show reasonably good agreement with the experimental data.     

ChemInform Abstract: Intermetallic Compounds Ce4Ru3Ga3 and La3Ru2Ga2 with Crystal Structures of New Types.

Ce₄Ru₃Ga₃ (I) and La₃Ru₂Ga₂ (II) are synthesized by arc melting of the elements under Ar followed by annealing (873 K, 30 d).     

ChemInform Abstract: Ab initio Calculations of Electronic Band Structure and Charge Densities of Zinc Blende‐Type GaN,BN and Their Solid Solution B0.5Ga0.5N.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

Characterization of polycrystalline GaN grown on silica glass substrates

The structural, optical, and electrical properties of GaN films grown on silica glass substrate by metalorganic chemical vapor deposition were studied. X-ray diffraction showed that the films were grown in hexagonal structure with a predominant (0 0 0 2) peak. A broad and strong band-edge emission and very weak yellow luminescence in photoluminescence (PL) spectra were observed. And the temperature dependence of the PL spectra was extensively studied. The thermal quenching activation energy was found to be very close to the donor activation energy determined from the temperature dependence of the carrier concentration. Longitudinal optical phonons were found to be responsible for the PL broadening above 100 K.     

Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal–Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on p_Ga (which is proportional to the growth rate) in agreement with data on S_As, Zn_Ga, and Si_Ga where p_Ga is the partial pressure of trimethylgallium in the input gas stream.