Characterization of polycrystalline GaN grown on silica glass substrates

The structural, optical, and electrical properties of GaN films grown on silica glass substrate by metalorganic chemical vapor deposition were studied. X-ray diffraction showed that the films were grown in hexagonal structure with a predominant (0 0 0 2) peak. A broad and strong band-edge emission and very weak yellow luminescence in photoluminescence (PL) spectra were observed. And the temperature dependence of the PL spectra was extensively studied. The thermal quenching activation energy was found to be very close to the donor activation energy determined from the temperature dependence of the carrier concentration. Longitudinal optical phonons were found to be responsible for the PL broadening above 100 K.     

g-C3N4和Ni2P的复合及其光催化产氢性能研究

采用一步煅烧法使类石墨烯碳氮化合物(g-C_3N_4)和磷化镍(Ni_2P)复合并对其光催化产氢性能进行研究.利用X射线粉末衍射、透射电镜、X射线光电子能谱、紫外可见光谱对该复合催化剂的组成、形貌等进行了表征.研究了不同含量的Ni_2P以及不同牺牲剂对g-C_3N_4/Ni_2P光催化性能的影响.与单独的g-C_3N_4相比,该复合催化剂的光催化产氢速率提高了13倍,可以达到165μmol g~(-1)·h~(-1).利用光电化学和光致发光光谱等技术对该复合光催化剂的光催化产氢机理进行研究,结果表明Ni_2P在高效分离光生载流子方面起了关键作用,并且g-C_3N_4和Ni_2P的复合产生了协同效应加速了电子-空穴对的分离,提高了光催化产氢性能.     

Templated Growth of InP Nanocrystals with a Polytwistane Structure

We have synthesized InP nanocrystals of an unprecedented crystal phase at low temperature (35–100 °C) by templated growth of InP magic‐sized clusters. With the addition of stoichiometric equivalents of P(SiMe₃)₃ to the starting cluster, we demonstrate nanocrystal growth mediated through a partial dissolution and recrystallization pathway. This growth process was monitored using a combination of in situ UV/Vis and ³¹P NMR spectroscopy, revealing the intermediacy of smaller cluster species of higher symmetry. The nanocrystals that result from this templated growth exhibit a crystal structure that is neither zincblende nor wurtzite, and instead is derived from the original cluster. This structure is best described as a 3D polytwistane phase as deduced from a combination of X‐ray diffraction, Raman, and solid‐state NMR spectroscopy methods.     

Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal–Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on p_Ga (which is proportional to the growth rate) in agreement with data on S_As, Zn_Ga, and Si_Ga where p_Ga is the partial pressure of trimethylgallium in the input gas stream.     

磺化酞菁镓的二聚现象研究

采用分光光度法研究了磺化酞菁镓的二聚现象;测定了二聚常数k_d,讨论了PH值、离子强度、水、温度等因素对k_d的影响,研究结果表明:磺化酞菁镓的二聚反应可表示成:2SPcGaOH⇔(SPcGa)₂O+H₂O 且磺化酞菁镓的二聚常数随着离子强度、磺酸基数目、水的浓度的增加而增加。     

镓一镁二元相图研究

本文用两种差热分析方法即“一步法”和“二步法”以及多晶X-射线衍射法对镓-镁二元系相图进行了研究.修正了前人的工作. 为了考察该二元体系的金属间化合物是否以镓原子多面体簇状结构存在,作者对富镓部分相图(镓原子百分含量大于71.4％)进行了较为细致的研究.在三种不同比例下(含镓量分别为85at.％、90at.％、95at.％)合成,分离得到了颗粒状晶体.对这些晶体进行了差热分析和多晶X-射线研究.分析结果表明:从这三种不同比例的合金中分离得到的晶体为同一金属间化合物Mg_2Ga_5,也是该二元系镓含量最高的金属间化合物.考察Ga-Mg体系中存在的五种金属间化合物的结构,未能发现镓原子以多面体簇状结构存在的现象.     

MoO3在Ga2O3上的分散研究

采用ＸＲＤ,ＬＲＳ,ＦＴ－ＩＲ,ＵＶ－ＤＲＳ和ＴＰＲ研究了ＭｏＯ３在体载体Ｇａ２Ｏ３上的分散情况。结果表明：ＭｏＯ３的分散状态受Ｇａ２Ｏ３表面结构的影响,ＭｏＯ３在Ｇａ２Ｏ３上的分散容量约为８．４μｍｏｌ／ｍ＾２;低于该分散容量时,Ｍｏ＾６＋主要以高分散态存在于Ｇａ２Ｏ３表面,而高于该分散容量时,除在分散态的Ｍｏ－Ｏ物种外,还有残余的ＭｏＯ３晶相出现。ＴＰＲ结果表明：ＭｏＯ３低于分散容量时,体系中