太赫兹片上系统中低温砷化镓薄膜光电导天线的研究

太赫兹时域光谱技术是一种在太赫兹频段内,广泛应用的光谱测量技术。这种技术可以用于许多物质的频谱分析,对于研究化学、半导体与生物分子等领域有着无可比拟的作用。然而用该系统进行样品探测时,受回波的影响频谱分辨率较低;受太赫兹波光斑大小以及待测样品与电磁波相互作用距离长短的影响,样品消耗量较多,并且整个系统的占用空间较大,这些局限性都限制了太赫兹时域光谱系统的进一步发展。为了突破太赫兹时域光谱系统的局限性,设计了一种将太赫兹泵浦区、探测区和传输波导集成到一个硅片上的太赫兹片上系统,该系统不仅能够解决上述系统的局限性,还能够省去样品测量前的光路准直环节,使样品的测量过程更加简便,同时集成化的系统也很大程度上提高了太赫兹波传输的稳定性。在太赫兹片上系统中,泵浦区和探测区的光电导天线是由低温砷化镓和金属电极制成,由于受到太赫兹片上系统的高度集成化和低温砷化镓晶体生长条件的限制,如何制备出低温砷化镓半导体薄膜衬底,并将其转移与键合,是太赫兹片上系统研制过程中的关键环节。首先利用分子束外延（MBE）技术制备出由半绝缘砷化镓、砷化镓缓冲层、砷化铝牺牲层和低温砷化镓层构成的外延片,然后利用盐酸溶液与砷化铝和低温砷化镓反应速度差别较大的原理,将200 nm厚的AlAs牺牲层腐蚀掉,从而得到2 μm厚的低温砷化镓薄膜。为了更加高效并且完整地得到低温砷化镓薄膜,研究了盐酸溶液在不同温度和不同浓度下与AlAs牺牲层的选择性腐蚀速率的关系。给出了低温砷化镓薄膜制备过程中盐酸的最佳体积比浓度和最佳温度,即在73 ℃下13.57%的盐酸溶液中进行砷化铝牺牲层的腐蚀。相比于已有工艺,这种腐蚀方法对实验设备的要求较低并且具有较高的安全性。最后,将单层低温砷化镓薄膜转移键合至硅片上,并制成光电导天线的结构。利用飞秒激光脉冲进行激发探测到太赫兹信号。由此说明,低温砷化镓薄膜的获取、转移与键合工艺能够满足芯片级太赫兹系统的制作要求,这为太赫兹片上系统的进一步研制打下了坚实的基础。     

An Isolable Gallium-Substituted Nitrilimine and its Reactivity with B−H,Si−H and B−B Bonds

Reaction of the Ga(I) compound NacNacGa ( 9 ) with the diazo compound N₂CHSiMe₃ affords the nitrilimine compound NacNacGa(N-NCSiMe₃)(CH₂SiMe₃) ( 10 ). Carrying out this reaction in the presence of pyridine does not lead to C−H activation on the transient alkylidene NacNacGa=CHSiMe₃ but generates a metallated diazo species NacNacGa(NHN=CHSiMe₃)(CN₂SiMe₃) ( 13 ) that further rearranges into the isonitrile compound NacNacGa(NHN=CHSiMe₃)(N(NC)SiMe₃) ( 15 ). Reactions of 10 with the silane H₃SiPh and the borane HBcat furnished products of 1,3 addition to the nitrilimine moiety NacNacGa{N(ER_n)NCSiMe₃}(CH₂SiMe₃), whereas reaction with the diborane B₂cat₂ gave the product of formal nitrene insertion into the B−B bond. DFT calculations suggest that the interaction of 9 with N₂CHSiMe₃ proceeds through intermediate formation of an alkylidene compound that undergoes CH activation with a second molecule of N₂CHSiMe₃. Insertion into the B−B bond likely proceeds through an initial 1,3-addition of the diborane, followed by boryl migration to the former nitrene center.     

Near-IR absorbing donor–acceptor charge-transfer gallium complex,an example from non-transition metal chemistry

Gallium(III) catecholates with bipyridine ligand [(3,5-Cat)Ga(bipy)2]I and (3,6-Cat)GaI(bipy) (Cat is di-tert-butylcatecholate) were synthesized and characterized by single-crystal X-ray diffraction. The appearance of near-infrared ligand-to-ligand charge transfer for pentacoordinate complex was observed.     

Synthesis and Applications of Poly(Acrylphenylamidrazone-Phenyl-Hydrazide-Acylphenylhydrazine) Chelating Fiber for Preconcentration and Separation of Trae In(III), Zr(IV), Tl(I), V(V), Ga(III) and Ti(IV) from Solution Samples

 An ICP-OES method using a new poly (acrylphenylamidrazone-phenylhydrazide-acylphenylhydrazine) chelating fiber to preconcentrate and separate trace In(III), Zr(IV), Tl(I), V(V), Ga(III) and Ti(IV) ions from solution samples has been established. The new chelating fiber was synthesized using polyacrylonitrile fiber as a starting material and the structure of the chelating fiber was determined by FT infrared spectrometry. The acidity, adsorption rate, re-use, capacity and interference on the adsorption of ions on the chelating fiber as well as the conditions of desorption of these ions from the chelating fiber were investigated by means of inductively coupled plasma optical emission spectrometry (ICP-OES). The results show that the relative standard deviations for the determination of 10 ng/ml In, Tl, Ga and 1 ng/ml Zr, V, Ti were lower than 2.5%. The results obtained for these ions in real solution samples by this method were basically in agreement with the given values with average errors of less than 4%. Received November 29, 2000. Revision May 22, 2001.     

Two-color cross-correlation of fs-laser pulses by two-photon induced photoconductivity for near and far field optical measurements

Two-color two-photon induced photoconductivity in a GaAsP diffusion type photodiode is demonstrated by measuring femtosecond cross-correlation functions for widely separated wavelength pairs of 775 and 1300 nm. Results are obtained for a range of tunable wavelengths and average powers of the incident lasers by measuring the two-photon induced photocurrent as a function of the optical delay between the pulses. The temporal autocorrelation of femtosecond laser pulses in the near-field of a small diameter aluminum coated optical fiber tip is also obtained with the same photodiode method for single colors.     

超宽禁带半导体β-Ga_2O_3及深紫外透明电极、日盲探测器的研究进展

β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs.     

Radiofluorination of a Pre‐formed Gallium(III) Aza‐macrocyclic Complex: Towards Next‐Generation Positron Emission Tomography (PET) Imaging Agents

As part of a study to investigate the factors influencing the development of new, more effective metal‐complex‐based positron emission tomography (PET) imaging agents, the distorted octahedral complex, [GaCl(L)]?2 H₂O has been prepared by reaction of 1‐benzyl‐1,4,7‐triazacyclononane‐4,7‐dicarboxylic acid hydrochloride (H₂L?HCl) with Ga(NO₃)₃?9 H₂O, which is a convenient source of Ga^III for reactions in water. Spectroscopic and crystallographic data for [GaCl(L)]?2 H₂O are described, together with the crystal structure of [GaCl(L)]?MeCN. Fluorination of this complex by Cl^?/F^? exchange was achieved in high yield by treatment with KF in water at room temperature over 90 minutes, although the reaction was complete in approximately 30 minutes if heated to 80 °C, giving [GaF(L)]?2 H₂O in good yield. The same complex was obtained by hydrothermal synthesis from GaF₃?3 H₂O and Li₂L, and has been characterised by single‐crystal X‐ray analysis, IR, ¹H and ¹⁹F{¹H} NMR spectroscopy and ESI⁺ MS. Radiofluorination of the pre‐formed [GaCl(L)]?2 H₂O has been demonstrated on a 210 nanomolar scale in aqueous NaOAc at pH 4 by using carrier‐free ¹⁸F^?, leading to 60–70 % ¹⁸F‐incorporation after heating to 80 °C for 30 minutes. The resulting radioproduct was purified easily by using a solid‐phase extraction (SPE) cartridge, leading to 98–99 % radiochemical purity. The [Ga¹⁸F(L)] is stable for at least 90 minutes in 10 % EtOH/NaOAc solution at pH 6, but defluorinates over this time scale at pH of approximately 7.5 in phosphate buffered saline (PBS) or human serum albumin (HSA). The subtle role of the Group 13 metal ion and co‐ligand donor set in influencing the pH dependence of this system is discussed in the context of developing potential new imaging agents for PET.     

Common Pathway for K562 Cells Endocytosis and Release of Gac-Tf and Ga2-Tf via a Transferrin Receptor

There has been an increasing interest in the use of gallium in anticancer activity. However, whether the uptakes of two species of transferrin, including digallium transferrin (Ga₂‐Tf) and the C‐terminal monogallium transferrin (Ga_C‐Tf) by cells, are different is not well understood. In this work the mechanism of both species passing in and out K562 cells has been established by using ¹²⁵I‐labeled transferrin. There were about (1.5±0.08)×10⁵ binding sites per cell surface. Both Ga₂‐Tf and Ga_C‐Tf were recycled to the cell exterior with a protracted endocytic cycle compared to apotransferrin (apoTf). The cycling time from the internalization to release was calculated about t_1/2= (3.15±0.055) min for apoTf, t_1/2= (4.69±0.09) min for Ga₂‐Tf and t_1/2= (4.78±0.15) min for Ga_C‐Tf. The result implies that metal dissociating from transferrin in acidic endosomes was likely to be the key step. Both Ga₂‐Tf and Ga_C‐Tf into K562 cells are transferrin receptor‐mediated process with a similar rate of endocytosis and release. Our present observations provide useful information for better targeted drugs in specific therapy.     

Electrochemical formation of porous superlattices on n-type (1 0 0) InP

The present work deals with the electrochemical formation of superlattice structures on n-type (1 0 0) InP in HCl solutions. The superlattices consist of a stack of two layers with alternating high and low porosity on n-type material obtained by changing the anodizing current or the potential periodically in HCl solutions. The superlattice structures were characterized by scanning electron microscopy. The pore morphology and structure depend strongly on the electrochemical conditions. For anodization with low currents (e.g., 1 or 10 mA) or at low potentials (e.g., 1.5 V_Ag/AgCl), a porous layer with a facet-like structure was formed. For higher currents or potentials, such as 50 or 100 mA or 3 V_Ag/AgCl, respectively, a tree-like structure with random and/or tangled branches was observed. Finally, samples anodized at 5 V_Ag/AgCl, show a porous layer with a regular array of straight pores. The morphology and structure of the stacks of the porous layers can be controlled in the nanometer range, depending on the electrochemical conditions.