三维PIC数值模拟中二次发射的实现

探讨了电子撞击金属表面产生二次电子的理论,介绍了二次电子发射系数、非弹性背散射电子能量分布等重要物理参数的计算式。根据相关的理论及公式,编写了三维PIC数值模拟程序的二次发射模块, 建立相应的数值模型进行模拟。模拟所得的二次电子发射系数及非弹性背散射电子的能量分布等主要参数与理论值一致,验证了模拟过程的正确性。     

On a first-passage problem for a cumulative process with exponential decay

A first-passage problem for a cumulative process is investigated. The cumulative process is assumed to be generated by a Poisson process, and the amplitude generated by an event is assumed to decay exponentially. An integral equation for the probability density of the first-passage time until the total amplitude exceeds a pre-specified threshold level is derived. The Laplace transform of the probability density of the first-passage time is obtained explicity when each amplitude generated by an event is distributed exponentially. The mean first-passage times are given in a closed form and plotted versus the threshold level.     

环形叶栅中二次流与损失的数值模拟

1引言三维叶栅中的损失主要由叶型损失、端部损失及二次流损失等组成。而其中的二次流损失,由于在损失总量中往往占有很大的比重,且又强烈依赖于叶栅几何形状等本身的特点,因而十分受到关注。许多学者分别用计算或试验的方法来研究二次流动,已经做了大量的工作（如文献1～8）。然而,以往大部分的研究往往局限于直列叶栅,对沿径向非等截面的环形叶棚的详细研究甚少。本文基于非正交曲线坐标与非正交速度分量下完全守恒型的Navier－Stokes方程,采用时间推进法与Baldwin－Lomax湍流模型,数值求解环形叶栅内部的粘性流场,得到了十分…     

Novel microwave plasma‐assisted CVD reactor for diamond delta doping

We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Deformations of 2k-Einstein structures

It is shown that the space of infinitesimal deformations of 2k-Einstein structures is finite dimensional on compact non-flat space forms. Moreover, spherical space forms are shown to be rigid in the sense that they are isolated in the corresponding moduli space.     

K_s~0重建及其寿命测量在BESⅡ上的研究

在BESⅡ上利用Bhabha,dimu事例确定了BEPC束流对撞中心位置,并以此为初级顶点研究了次级顶点的重建,改进了原有次级顶点重建程序,在此基础上选择 事例,测量了Ks0的寿命,并利用50MJ/ψ数据测量了Ks0的单举质量谱,最后还利用MC研究了Ks0质量的1C拟合.     

霍尔推进器中磁化二次电子对鞘层特性的影响

为进一步研究霍尔推进器壁面二次电子发射对推进器性能的影响,采用流体模型数值模拟了二次电子磁化效应的等离子体鞘层特性.得到二次电子磁化鞘层的玻姆判据.讨论了不同的磁场强度和方向、二次电子发射系数以及不同种类等离子体推进器的鞘层结构.结果表明:随器壁二次电子发射系数的增大,鞘层中粒子密度增加,器壁电势升高,鞘层厚度减小;鞘层电势及粒子密度随着磁场强度和方位角的增加而增加;而对于不同种类的等离子体,壁面电势和鞘层厚度也不同.这为霍尔推进器的磁安特性实验提供了理论解释. 关键词： 霍尔推进器 磁鞘 二次电子     

Almost hermitian structures with parallel torsion

The characteristic connection of an almost hermitian structure is a hermitian connection with totally skew-symmetric torsion. The case of parallel torsion in dimension 6 is of particular interest. In this work, we give a full classification of the algebraic types of the torsion form, and, on the basis of this, undertake a systematic investigation into the possible geometries. Numerous naturally reductive spaces are constructed and classified, and examples on nilmanifolds given.     

Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Siⁿ⁺) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.