全文获取类型
收费全文 | 6993篇 |
免费 | 1215篇 |
国内免费 | 514篇 |
专业分类
化学 | 4106篇 |
晶体学 | 287篇 |
力学 | 303篇 |
综合类 | 34篇 |
数学 | 50篇 |
物理学 | 3942篇 |
出版年
2024年 | 4篇 |
2023年 | 29篇 |
2022年 | 74篇 |
2021年 | 107篇 |
2020年 | 172篇 |
2019年 | 141篇 |
2018年 | 138篇 |
2017年 | 196篇 |
2016年 | 311篇 |
2015年 | 271篇 |
2014年 | 314篇 |
2013年 | 593篇 |
2012年 | 383篇 |
2011年 | 583篇 |
2010年 | 487篇 |
2009年 | 537篇 |
2008年 | 535篇 |
2007年 | 539篇 |
2006年 | 574篇 |
2005年 | 419篇 |
2004年 | 353篇 |
2003年 | 344篇 |
2002年 | 326篇 |
2001年 | 198篇 |
2000年 | 181篇 |
1999年 | 159篇 |
1998年 | 129篇 |
1997年 | 117篇 |
1996年 | 75篇 |
1995年 | 89篇 |
1994年 | 89篇 |
1993年 | 45篇 |
1992年 | 53篇 |
1991年 | 30篇 |
1990年 | 18篇 |
1989年 | 16篇 |
1988年 | 27篇 |
1987年 | 14篇 |
1986年 | 7篇 |
1985年 | 7篇 |
1984年 | 8篇 |
1983年 | 6篇 |
1982年 | 4篇 |
1981年 | 6篇 |
1980年 | 3篇 |
1978年 | 1篇 |
1977年 | 2篇 |
1976年 | 2篇 |
1975年 | 3篇 |
1973年 | 3篇 |
排序方式: 共有8722条查询结果,搜索用时 281 毫秒
71.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation. 相似文献
72.
Wenran Feng Chizi Liu Guangliang Chen Guling Zhang Weichao Gu Erwu Niu Si-Ze Yang 《Applied Surface Science》2007,253(11):4923-4927
Hard films prepared by pulsed high energy density plasma (PHEDP) are characterized by high film/substrate adhesive strength, and high wear resistance. Titanium carbonitride (TiCN) films were deposited onto YG11C (ISO G20) cemented carbide cutting tool substrates by PHEDP at room temperature. XRD, XPS, SEM, AES, etc. were adopted to analyze the phases (elements) composition, microstructure and the interface of the films, respectively. The results show that, the uniform dense films are composed of grains ranging from 70 to 90 nm. According to the AES result, there is a broad transition layer between the film and the substrate, due to the ion implantation effect of the PHEDP. The transition layer is favorable for the film/substrate adhesion. 相似文献
73.
For improved mechanical and water‐swelling properties of chitosan films, a series of transparent films were prepared with dialdehyde starch as a crosslinking agent. Fourier transform infrared and X‐ray analysis results demonstrated that the formation of Schiff's base disturbed the crystallization of chitosan. The mechanical properties and water‐swelling properties of the films were significantly improved. The best values of the tensile strength and breaking elongation were 113.1 MPa and 27.0%, respectively, when the dialdehyde starch content was 5%. All the crosslinked films still retained obvious antimicrobial effects toward S. aureus and E. coli, and they showed potential for biomedical applications. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 993–997, 2003 相似文献
74.
A method is developed for performing a local reduction of the governing physics for fluid problems with domains that contain a combination of narrow and non‐narrow regions, and the computational accuracy and performance of the method are measured. In the narrow regions of the domain, where the fluid is assumed to have no inertia and the domain height and curvature are assumed small, lubrication, or Reynolds, theory is used locally to reduce the two‐dimensional Navier–Stokes equations to the one‐dimensional Reynolds equation while retaining a high degree of accuracy in the overall solution. The Reynolds equation is coupled to the governing momentum and mass equations of the non‐narrow region with boundary conditions on the mass and momentum flux. The localized reduction technique, termed ‘stitching,’ is demonstrated on Stokes flow for various geometries of the hydrodynamic journal bearing—a non‐trivial test problem for which a known analytical solution is available. The computational advantage of the coupled Stokes–Reynolds method is illustrated on an industrially applicable fully‐flooded deformable‐roll coating example. The examples in this paper are limited to two‐dimensional Stokes flow, but extension to three‐dimensional and Navier–Stokes flow is possible. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
75.
K.R. Murali 《Journal of Physics and Chemistry of Solids》2007,68(12):2293-2296
Zinc oxide (ZnO) films were deposited on glass substrates by the sol-gel dip coating method using acrylamide route. The films were characterized by X-ray diffraction studies which indicated wurtzite structure. Optical absorption measurements indicated band gap in the range 3.17-3.32 eV. XPS studies indicated the formation of ZnO. The resistivity of the films were in the range 1000-10,000 ohm cm. 相似文献
76.
Below a critical thickness, of about 60 nm, the glass transition temperature of polystyrene (PS) films decreases with film thickness, as demonstrated using free‐standing films. A geometrical model is developed here describing this phenomenon in the case of ideal (Gaussian) chains. This model, which can be considered as an application of the free volume model, assumes that the decrease of the glass transition temperature from thick to ultrathin films is due to the modification of the interpenetration between neighboring chains. The theoretical curve deduced from the model is in excellent agreement with the PS experimental results, without using any adjustable parameters. From these results, it can be concluded that new chain motions, usually buried in bulk samples, are expressed by the presence of the surface. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 10–17, 2007 相似文献
77.
介绍了电泳技术制备YBCO高温超导厚膜的实验方法和YBCO高温超导厚膜的电学性质测量 ,讨论了在学生小型科研实验或设计实验中开展此实验的学时安排、注意事项和实验内容的扩展 . 相似文献
78.
We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed. 相似文献
79.
Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms. 相似文献
80.
G. K. Dalapati S. Chatterjee S. K. Samanta C. K. Maiti 《Applied Surface Science》2003,210(3-4):249-254
Thin films of titanium dioxide have been deposited on strained Si0.82Ge0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C3H7)4] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (Dit), fixed oxide charge density (Qf/q) and flat-band voltage (VFB) of as-deposited films were found to be 13.2, 40.6 Å, 6×1011 eV−1 cm−2, 3.1×1011 cm−2 and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications. 相似文献