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101.
P.M.?Kosaka Y.?Kawano M.C.?Salvadori D.F.S.?PetriEmail author 《Cellulose (London, England)》2005,12(4):351-359
The adsorption of cellulose acetate (CA), cellulose acetate propionate (CAP) and cellulose acetate butyrate (CAB) from solutions
prepared in acetone onto silicon wafers led to ultrathin films, which were characterized by ellipsometry, atomic force microscopy
(AFM) and contact angle measurements. The polysaccharides films were characterized in the air just after their formation and
after annealing at temperatures higher than their glass transition temperature or melt temperature. The films thickness close
to 2 nm and surface roughness did not vary significantly upon annealing. AFM images revealed the presence of small clumps
dispersed on a homogeneous layer, which covered completely the Si wafers. Such topographic details were also observed after
annealing. However, upon annealing the films surfaces changed from hydrophilic to hydrophobic, evidencing molecular re-orientation
at the solid–air interface. The adhesion of bovine serum albumin (BSA) and lipase onto the cellulose esters films was quantified
in order to evaluate the possibility of applying such films as selective support for biomolecules. 相似文献
102.
Ronny Kleinhempel Gunar Kaune Matthias Herrmann Hartmut Kupfer Walter Hoyer Frank Richter 《Mikrochimica acta》2006,156(1-2):61-67
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy
target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural,
electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition
rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency
in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition
mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222)
oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown
in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress
in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa. 相似文献
103.
泡沫铅对VRLA电池负极活性物质结构及性能影响 总被引:3,自引:0,他引:3
0引言随着36V/42V汽车电源系统的提出,新一轮汽车用电池的竞争不断加剧。从目前情况看,铅酸电池由于具有成本低廉,使用可靠,原材料来源丰富,铅回收率可高达98%等优点,因此成为电动车电源最实际的选择之一[1]。但作为电动车用电池,需要克服其比能量低、充电接受能力差和负极硫酸盐化等缺点。为此各国科学家开展了大量的研究工作。最近报道用铸造多孔体作为敞口铅酸电池的集流体,它的比表面积为14cm2·cm-3,正极活性物质利用率上升到50%,远高于传统的铸造板栅[2]。在铅酸电池集流体研究领域里另一个重大进步,就是以R V C(R etic-ulated V i… 相似文献
104.
The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions. 相似文献
105.
The thinning of foam films from aqueous solutions of an ABA triblock copolymer of polyethylene oxide and polypropylene oxide (average molecular weight 14,000 g/mol) is studied experimentally. The dependence of the surface forces on film thickness is obtained by the dynamic method of Scheludko and Exerowa.The total surface force measured in foam films (radius 60–70 m) from 10–5 M (0.014 wt%) polymer solution with 0.1 M NaCl is positive at thicknesses from about 800 down to 460 . The electrostatic repulsion is negligible while the contribution of van der Waals attraction is small (within 15%). Therefore a positive surface force component predominates. Most probably it arises from steric interactions between the hydrophilic polyethylene oxide tails of the polymer. The dynamic method appears to be a suitable technique for exploring the stabilization of foam films from ABA copolymers. 相似文献
106.
Titanium dioxide (TiO2) thin films have been prepared on indium doped tin oxide (ITO) glass by sol-gel dip-coating method. Properties of the films
were determined as a function of heat-treatment by X-ray diffraction, scanning electron microscopy and photoelectrochemical
tests. The films heat-treated at higher temperatures show better crystallinity and photoresponse. The microscopic structure
on the film after heat-treatment is attributed to the incorporation of organic polymer into the precursor solution. The performance
of the electrodes treated at different temperature on photoelectrocatalytic degradation of methyl orange was investigated.
The effect of applied potential and the ability of the electrode to be repeatedly used in photoelectrocatalytic degradation
were also evaluated. 相似文献
107.
Sawada Y. Seki S. Sano M. Miyabayashi N. Ninomiya K. Iwasawa A. Tsugoshi T. Ozao R. Nishimoto Y. 《Journal of Thermal Analysis and Calorimetry》2004,77(3):751-757
Tin-doped indium oxide In2O3 (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal
analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS)
in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased
on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365
to 600°C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures
for 250 nm thick films were approx. 100-120 and 205-215°C. The 25 nm thick films evolved water vapor at much higher temperatures;
a shoulder at approx. 150-165°C and a peak at approx. 242°C were observed. The evolution temperatures increased by increasing
the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of
water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)3, formed on the surface of the nm-sized ITO particles.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
108.
V. Riveros M. Gulppi M. Páez J. H. Zagal C. M. Rangel D. Huerta P. Skeldon G. E. Thompson 《Journal of Solid State Electrochemistry》2006,10(2):83-90
Using voltage-time responses and cyclic voltammetry, the initial stages of anodizing of Al–2.1 at.% Ag and Al–4 at.% Ag alloys
are shown to depend upon the heat treatment of the alloys and the pre-treatment of the alloy surfaces. Chemical polishing
of solution-treated alloys leads to relatively uniform anodic oxidation on a relatively smooth alloy surface, in the absence
of significant effects of coarse, silver-rich intermetallics. In contrast, losses of current to oxygen generation arise for
the roughened alloy surface from mechanical polishing. With ageing, secondary reactions at the relatively silver-rich intermetallics
are more prevalent, although the effects on the voltage-time response depend upon the balance between processes occurring
on the matrix and intermetallic regions, including film growth, oxygen generation within the anodic film, film damage due
to release of oxygen, dissolution of silver species and re-growth of damaged film. 相似文献
109.
Zein films plasticized with oleic acid were formed by solution casting, by the stretching of moldable resins, and by blown film extrusion. The effects of the forming process on film structure were investigated by X-ray diffraction. Wide-angle X-ray scattering (WAXS) patterns showed d-spacings at 4.5 and 10 A, which were attributed to the zein alpha-helix backbone and inter-helix packing, respectively. The 4.5 A d-spacing remained stable under processing while the 10 A d-spacing varied with processing treatment. Small-angle X-ray scattering (SAXS) detected a long-range periodicity for the formed films but not for unprocessed zein, which suggests that the forming process-promoted film structure development is possibly aided by oleic acid. The SAXS d-spacing varied among the samples (130-238 A) according to zein origin and film-forming method. X-ray scattering data suggest that the zein molecular structure resists processing but the zein supramolecular arrangements in the formed films are dependent on processing methods. Structural model for a zein molecular aggregate (based on Matsushima et al.10). Rectangular prisms of individual zein molecules are hexagonally aligned parallel to each other. 相似文献
110.
M. V. Reddy B. Pecquenard P. Vinatier A. Levasseur 《Surface and interface analysis : SIA》2007,39(8):653-659
We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献