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41.
Memory switching of germanium tellurium amorphous semiconductor 总被引:1,自引:0,他引:1
M.M. Abdel-Aziz 《Applied Surface Science》2006,253(4):2059-2065
The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔEσ, the room temperature electrical conductivity σRT and the pre-exponential factor σ0 were measured and validated for the tested sample. The conduction activation energy ΔEσ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field Eth decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔEth is calculated. Measurements of the dissipated threshold power Pth and the threshold resistance Rth were carried out at TOP point at different temperatures of the samples. The activation energies ΔER and ΔEP caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system. 相似文献
42.
The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 105 cm−2, the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared. 相似文献
43.
On the reliability of unsaturated hydraulic conductivity calculated from the moisture retention curve 总被引:7,自引:0,他引:7
In comparison with direct measurements of unsaturated hydraulic conductivity, the methods of calculations from the moisture retention curve are attractive for their fast and simple use and low cost. These are the main reasons for their increasing use, mainly in spatial variability studies. On the other hand, it is known that their applicability is limited. The possibility of the use of the retention curve to indirectly determine hydraulic conductivities is analyzed as follows. The theoretical derivation of the relationK(h) – (h) is briefly discussed with regards to potential sources of inaccuracy. The sensitivity of the algorithm forK(h) calculation is studied as a response to possible inaccuracies in the retention curve determination. Conclusions about the usability of calculated hydraulic conductivities are drawn. 相似文献
44.
StudiesonSolidStateReactionsofCoordinationCompounds(LXXI)──SolidStateReactionsofo-AminobenzoicAcidwithCopper(Ⅱ)AcetateandForm... 相似文献
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Ni-SDC固体氧化物燃料电池阳极的合成和性质 总被引:4,自引:0,他引:4
采用柠檬酸-硝酸盐溶胶-凝胶低温自蔓延燃烧法制备氧化镍(NiO)粉末和Ce0.8Sm0.2O1.9(SDC)粉末,并将NiO与SDC按不同质量比和不同制备工艺制备了固体氧化物燃料电池(SOFC)的阳极前身。再用自组装的还原装置将其在820℃经2.5h还原后,采用四端子法测量其电导率值。分析了阳极片电导率与阳极片微结构、Ni的质量百分数、混合研磨时间及烧结温度之间的关系。结果显示,阳极片的电导率强烈依赖于镍含量和制备工艺。 相似文献
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用溶胶-凝胶方法制备了钠快离子导体Na_5YSi_4O_(12)(简称NYS)的纯相,应用交流阻抗谱技术测定了样品的离子电导和离子导电活化能,用扫描电子显微镜对用不同方法制备的样品烧结体表面进行了观察。与传统固相反应法制备的NYS离子导体相比,用溶胶-凝胶方法制备的NYS烧结体具有较好的界面效应。 相似文献
50.
Investigations on Electronically Conducting Oxide Systems. XVI. Solid Solutions and Conductivity in the System MgTi2O5? Ti3O5 Solid solution formation is reported for the system Mg1–xTi2–xIVTi2xIIIO5. With increasing x there is at room temperature a transition from the orthorhombic pseudobrookite structure to the monoclinic low-temperature modification of Ti3O5. The X-ray diffraction pattern results are supported by DSC measurements, electrical and magnetic investigations. The tendency of Ti? Ti pair formation in the low-temperature Ti3O5 structure is accompanied by a drop of the activation energy for electrical conductivity and a decreasing susceptibility at high TiIII concentrations. 相似文献