薄膜法布里-珀罗滤光片中的超棱镜效应

基于薄膜法布里珀罗滤光片在其峰值波长处具有较大群延迟的特性,设计并从实验上验证了光束倾斜入射时这种结构中存在的超棱镜效应。根据光学薄膜理论中的特征矩阵法,数值模拟计算了器件的群延迟和空间色散曲线,镀制并对器件进行了测试。测试结果表明器件在透射峰值波长处因超棱镜效应引起的空间色散最大位移值达到65μm,与理论计算结果非常吻合;相对于传统的光栅和棱镜器件而言器件具有更高的空间角度色散,实际测试在784.5 nm至786.5 nm波长范围内器件的角色散达到30°/nm。     

Membrane Organization and Dynamics of the G-Protein-Coupled Serotonin<Subscript>1A</Subscript> Receptor Monitored Using Fluorescence-Based Approaches

The G-protein-coupled receptor (GPCR) superfamily represents one of the largest classes of molecules involved in signal transduction across the plasma membrane. Fluorescence-based approaches have provided valuable insights into GPCR functions such as receptor–receptor and receptor–ligand interactions, real-time assessment of signal transduction, receptor dynamics on the plasma membrane, and intracellular trafficking of receptors. This has largely been possible with the use of fluorescent probes such as the green fluorescent protein (GFP) from the jellyfish Aequoria victoria and its variants. We discuss the potential of fluorescence-based approaches in providing novel information on the membrane organization and dynamics of the G-protein-coupled serotonin_1A receptor tagged to the enhanced yellow fluorescent protein (EYFP). These authors contributed equally to the work.     

High Probe Intensity Photobleaching Measurement of Lateral Diffusion in Cell Membranes

Lateral diffusion measurements, most commonly accomplished through Fluorescence Photobleaching Recovery (FPR or FRAP), provide important information on cell membrane molecules' size, environment and participation in intermolecular interactions. However, serious difficulties arise when these techniques are applied to weakly expressed proteins of either of two types: fusions of membrane receptors with visible fluorescent proteins or membrane molecules on autofluorescent cells. To achieve adequate sensitivity in these cases, techniques such as interference fringe FPR are needed. However, in such measurements, cytoplasmic species contribute to the fluorescence recovery signal and thus yield diffusion parameters not properly representing the small number of surface molecules. A new method helps eliminate these difficulties. High Probe Intensity (HPI)-FPR measurements retain the intrinsic confocality of spot measurements to eliminate interference from fluorescent cytoplasmic species. However, HPI-FPR methods lift the previous requirement that FPR procedures be performed at probe beam intensities low enough to not induce bleaching in samples during measurements. The high probe intensities now employed provide much larger fluorescence signals and thus more information on molecular diffusion from each measurement. We report successful measurement of membrane dynamics by this technique.     

Langmuir-Blodgett self-assembly and electrochemical catalytic property of FePt magnetic nano-monolayer

Dispersed-well FePt nanoparticles with particle size ~5 nm have been prepared by hydrazine hydrate reduction of H₂PtCl₆·6H₂O and FeCl₂·4H₂O in ethanol–water system. By employing as-synthesized FePt nanoparticles, the monolayer can be formed by LB Technique. The structural, magnetic properties and electrochemical properties of FePt monolayer were respectively studied by XRD, TEM, VSM and CHI 820 electrochemical workstation. The as-synthesized particle has a chemically disordered fcc structure and can be transformed into chemically ordered fct structure after annealing treatment above 400°C. The coercivity of ordered fct FePt phase can be up to 2515Oe. CVs of 0.5 M H₂SO₄/0.5M CH₃OH on GCE modified with FePt nanoparticles monolayer films illustrate that the as-synthesized FePt is a kind of active electrochemical catalyst.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optimization of the CIGS based thin film solar cells: Numerical simulation and analysis

Chalcopyrite Cu(In,Ga)Se (CIGS) is a very promising material for thin film photovoltaics and offers a number of interesting advantages compared to the bulk silicon devices. CIGS absorbers today have a typical thickness of about 1–2 μm. However, on the way toward mass production, it will be necessary to reduce the thickness even further. This paper indicates a numerical study to optimization of CIGS based thin film solar cells. An optimum value of the thickness of this structure has been calculated and it is shown that by optimizing the thickness of the cell efficiency has been increases and cost of production can be reduces. Numerical optimizations have been done by adjusting parameters such as the combination of band gap and mismatch as well as the specific structure of the cell. It is shown that by optimization of the considered structure, open circuit voltage increases and an improvement of conversion efficiency has been observed in comparison to the conventional CIGS system. Capacitance–voltage characteristics and depletion region width versus applied voltage for optimized cell and typical cell has been calculated which simulation results predict that by reducing cell layers in the optimized cell structure, there is no drastically changes in depletion layer profile versus applied voltage. From the simulation results it was found that by optimization of the considered structure, optimized value of CIGS and transparent conductive oxide thickness are 0.3 μm and 20 nm and also an improvement of conversion efficiency has been observed in comparison to the conventional CIGS which cell efficiency increases from 17.65 % to 20.34%, respectively.     

Probing mechanical properties of thin film and ceramic materials in micro- and nano-scale using indentation techniques

In this study, we report on the mechanical properties, failure and fracture modes in two cases of engineering materials; that is transparent silicon oxide thin films onto poly(ethylene terephthalate) (PET) membranes and glass-ceramic materials. The first system was studied by the quazi-static indentation technique at the nano-scale and the second by the static indentation technique at the micro-scale. Nanocomposite laminates of silicon oxide thin films onto PET were found to sustain higher scratch induced stresses and were effective as protective coating material for PET membranes. Glass-ceramic materials with separated crystallites of different morphologies sustained a mixed crack propagation pattern in brittle fracture mode.     

高温超导薄膜在微波双工器上的应用

本文采用全波电磁仿真方法设计、制作并测试了一种工作于C波段的星载高温超导微波双工器,采用的材料是在厚度为0.5mm介电常数为23.5的LaAlO3衬底上用磁控溅射法制备而成的双面氧化物高温超导薄膜YBCO.利用在微波范围内,高温超导薄膜的Q值比常规导体高1～3个数量级的特点,实现了器件的小型化和低插损.     

ZnO-SnO_2透明导电薄膜的制备及性能研究

采用二步成胶工艺制备ZnO-SnO_2透明导电薄膜,应用X射线衍射、原子力显微镜、紫外-可见分光光度计、薄膜分析仪及四探针仪等对薄膜的结构、表面微观形貌、透过率和导电性能进行表征.结果表明,锌锡摩尔比为9/12,退火温度为500 ℃时,薄膜的透过率达90%,电阻率为3.15×10~(-3) Ω·cm.与其它工艺相比,二步成胶工艺所制备出的ZnO-SnO_2透明导电薄膜性能优异.     

空心阴极放电沉积氮化碳薄膜的结构和成键性质

利用空心阴极放电等离子体源在Si(100)衬底上沉积了氮化碳薄膜.用XRD,SEM,XPS及拉曼和红外吸收光谱对薄膜的结构、成分和化学键等进行了研究.XRD分析表明,制备的氮化碳薄膜为非晶结构.XPS分析证实了薄膜中以C—C,sp2CN和sp3CN键为主,并得出薄膜中的氮碳比为0.71,而sp3—CN相的含量也达到了0.39.拉曼和红外吸收光谱的结果也与XPS分析的键态结果一致.