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991.
The preparation of high‐quality In2O3:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In2O3:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm2/V s at a device‐relevant carrier density of 1.8 × 1020 cm–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)  相似文献   
992.
The X‐ray mass attenuation coefficients of silver were measured in the energy range 5–20 keV with an accuracy of 0.01–0.2% on a relative scale down to 5.3 keV, and of 0.09–1.22% on an absolute scale to 5.0 keV. This analysis confirms that with careful choice of foil thickness and careful correction for systematics, especially including harmonic contents at lower energies, the X‐ray attenuation of high‐Z elements can be measured with high accuracy even at low X‐ray energies (<6 keV). This is the first high‐accuracy measurement of X‐ray mass attenuation coefficients of silver in the low energy range, indicating the possibility of obtaining high‐accuracy X‐ray absorption fine structure down to the L1 edge (3.8 keV) of silver. Comparison of results reported here with an earlier data set optimized for higher energies confirms accuracy to within one standard error of each data set collected and analysed using the principles of the X‐ray extended‐range technique (XERT). Comparison with theory shows a slow divergence towards lower energies in this region away from absorption edges. The methodology developed can be used for the XAFS analysis of compounds and solutions to investigate structural features, bonding and coordination chemistry.  相似文献   
993.
Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I0 normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.  相似文献   
994.
Abstract

Two all‐optical analytical techniques are reviewed. Both are capable of highly sensitive multi‐element analysis. One is by means of resonance‐enhanced plasma spectroscopy. It minimizes the continuum background associated with laser‐induced plasmas. Relative to laser‐induced breakdown spectroscopy, the signal‐to‐noise ratio is improved by orders of magnitude, thus allowing the quantitation of sodium and potassium at the single blood cell level. The other technique utilizes laser‐excited atomic fluorescence. It has been traditionally handicapped by its one wavelength–one transition specificity. We showed, however, that numerous elements could be induced to fluoresce at a single excitation wavelength of 193 nm provided that the analytes were imbedded in dense plumes, such as those produced by pulsed laser ablation. This method eliminates the continuum plasma background and sub‐ppb sensitivity was demonstrated in the analysis of aqueous lead colloids.  相似文献   
995.
In the framework of stochastic volatility models we examine estimators for the integrated volatility based on the pth power variation (i.e. the sum of pth absolute powers of the log‐returns). We derive consistency and distributional results for the estimators given high‐frequency data, especially taking into account what kind of process we may add to our model without affecting the estimate of the integrated volatility. This may on the one hand be interpreted as a possible flexibility in modelling, for example adding jumps or even leaving the framework of semimartingales by adding a fractional Brownian motion, or on the other hand as robustness against model misspecification. We will discuss possible choices of p under different model assumptions and irregularly spaced data. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
996.
The goal of the paper is to analyse properties of solutions for linear thermoelastic systems of type III in one space variable. Our approach does not use energy methods, it bases on a special diagonalization procedure which is different in different parts of the phase space. This procedure allows to derive explicit representations of solutions. These representations help to prove results for well‐posedness of the Cauchy problem, LPLq decay estimates on the conjugate line and results for propagation of singularities. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
997.
This article deals with a boundary value problem for Laplace equation with a non‐linear and non‐local boundary condition. This problem comes from petroleum engineering and is used to obtain an estimation of well productivity. The non‐linear and non‐local boundary condition is written on the well boundary. On the outer reservoir boundaries, we have both Dirichlet and Neumann conditions. In this paper, we prove the existence and uniqueness of a solution to this problem. The existence is proved by Schauder theorem and the uniqueness is obtained under more restricted conditions, when the involved operator is a contraction. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
998.
In this paper we review the theory of cells (particles) that evolve according to a dynamics determined by friction and that interact between themselves by means of suitable potentials. We derive by means of elementary arguments several macroscopic equations that describe the evolution of cell density. Some new results are also obtained—a formal derivation of a limit equation in the case of attractive potential as well as in the case of repulsive potential with a hard‐core part are presented. Finally we discuss the possible relevance of those results within the framework of individual cell‐based models. Several classes of potentials, including hard‐core, repulsive and potentials with attractive parts are discussed. The effect of noise terms in the equation is also considered. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
999.
In this paper, we consider the non‐linear wave equation a,b>0, associated with initial and Dirichlet boundary conditions. Under suitable conditions on α, m, and p, we give precise decay rates for the solution. In particular, we show that for m=0, the decay is exponential. This work improves the result by Yang (Math. Meth. Appl. Sci. 2002; 25 :795–814). Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
1000.
In order to conveniently obtain dynamic light scattering (DLS) signal, a simulation method of DLS signal is proposed in this paper. This method regards the light intensity fluctuation of DLS as a stationary random process. According to autocorrelation function (ACF) of DLS signal, the stationary random process of DLS can be generated by auto‐regressive (AR) model. Signal simulations of several kinds of distribution particles and comparison of simulations and experiment prove that AR model can be used for DLS signal simulation. Moreover, by analyzing effect of simulation parameters on simulation precision, we obtained the relationship between simulation parameters and simulation precision. Finally, application of simulation signal verifies the effectiveness and convenience of this simulation method.  相似文献   
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