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101.
Measurement of small-signal and large-signal responses of packaged laser modules at high temperature
Ning Hua Zhu Ji Min Wen Hai Peng Song Shang Jian Zhang Liang Xie 《Optical and Quantum Electronics》2006,38(15):1245-1257
In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules,
such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained
by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide
temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different
chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In
the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the
laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different
red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved
at higher temperature. 相似文献
102.
Polycrystalline perovskite La0.67Ca0.33MnO3 was synthesized by a sol–gel method. Its adiabatic temperature change ΔTad induced by a magnetic field change was measured directly. At 268 K, near its Curie temperature TC, ΔTad of La0.67Ca0.33MnO3 induced by a magnetic field change of 2.02 T reaches 2.4 K. The latent heat Q and magnetic entropy change −ΔSM induced by a magnetic field change were calculated from the temperature dependence of ΔTad and zero-field heat capacity Cp. The maximum values of Q and −ΔSM in La0.67Ca0.33MnO3 induced by a magnetic field change of 2.02 T are 1.85 J g−1 and 6.9 J kg−1 K−1, respectively. The former is larger than the phase transition latent heat of heating or cooling, which is about 1.70 J g−1. 相似文献
103.
In the present paper, we solve three boundary value problems related to the temperature field in oil strata — the fractional
extensions of the incomplete lumped formulation and lumped formulation in the linear case and the fractional generalization
of the incomplete lumped formulation in the radial case. By using the Caputo differintegral operator and the Laplace transform,
the solutions are obtained in integral forms where the integrand is expressed in terms of the convolution of some auxiliary
functions of Wright function type. A generalization of the Laplace transform convolution theorem, known as Efros’ theorem
is widely used. 相似文献
104.
High temperature oxidation of metals leads to residual stresses in the metal and in the oxide. In this work, we try to predict the evolution of the residual stresses in the growing oxides layers, during isothermal oxidation. The origin of these stresses is based on the microstructural model of Clarke, however, another justification is proposed, assuming a proportional dependence of the growth strain with the oxide layer thickness. Using the mechanics of thin layers, as well as the analysis proposed to describe the growth strain, a system of equations are deduced that predict the stresses evolution with oxidation time. Numerical analysis is performed, leading to a set of theoretical curves. 相似文献
105.
Tim R. Dargaville Julie M. Elliott Mathew Celina 《Journal of Polymer Science.Polymer Physics》2006,44(22):3253-3264
Films of piezoelectric PVDF and P(VDF‐TrFE) were exposed to vacuum UV (115–300 nm VUV) and γ‐radiation to investigate how these two forms of radiation affect the chemical, morphological, and piezoelectric properties of the polymers. The extent of crosslinking was almost identical in both polymers after γ‐irradiation, but surprisingly, was significantly higher for the TrFE copolymer after VUV‐irradiation. Changes in the melting behavior were also more significant in the TrFE copolymer after VUV‐irradiation due to both surface and bulk crosslinking, compared with only surface crosslinking for the PVDF films. The piezoelectric properties (measured using d33 piezoelectric coefficients and D‐E hysteresis loops) were unchanged in the PVDF homopolymer, while the TrFE copolymer exhibited more narrow D‐E loops after exposure to either γ‐ or VUV‐radiation. The more severe damage to the TrFE copolymer in comparison with the PVDF homopolymer after VUV‐irradiation is explained by different energy deposition characteristics. The short wavelength, highly energetic photons are undoubtedly absorbed in the surface layers of both polymers, and we propose that while the longer wavelength components of the VUV‐radiation are absorbed by the bulk of the TrFE copolymer causing crosslinking, they are transmitted harmlessly in the PVDF homopolymer. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3253–3264, 2006 相似文献
106.
Siripon Anantawaraskul João B. P. Soares Preechathorn Jirachaithorn Jumras Limtrakul 《Journal of Polymer Science.Polymer Physics》2006,44(19):2749-2759
Four polyethylene samples (PE) with different molecular weight distributions (MWD) were analyzed by crystallization analysis fractionation (Crystaf) at several cooling rates to investigate the effect of MWD and cooling rate on their Crystaf profiles. Using these results, we developed a mathematical model for Crystaf that considers crystallization kinetic effects, which are ignored in all previous Crystaf models. The Crystaf model we proposed can fit the experimental Crystaf profiles of the 4 polyethylene resins very well. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2749–2759, 2006 相似文献
107.
A.R. Phani 《Applied Surface Science》2006,253(4):1873-1881
The structural properties of fluorine containing polymer compounds make them highly attractive materials for hydro-oleophobic applications. However, most of these exhibit low surface energy and poor adhesion on the substrates. In the present investigation, crack free, smooth and uniform thin films of poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole]-co-tetrafluoroethylene (TFD-co-TFE) with good adhesion have been deposited by wet chemical spin-coating technique on polished AISI 440C steel substrates. The as-deposited films (xerogel films) have been subjected to annealing for 1 h at different temperatures ranging from 100 to 500 °C in an argon atmosphere. The size growth of the nano-hemispheres increased from 8 nm for xerogel film to 28 nm for film annealed at 400 °C. It was found that as the annealing temperature increased from 100 to 400 °C, nano-hemisphere-like structures were formed, which in turn have shown increase in the water contact angle from 122° to 147° and oil (peanut) contact angle from 85° to 96°. No change in the water contact angle (122°) has been observed when the films deposited at room temperature were heated in air from 30 to 80 °C as well as exposed to steam for 8 days for 8 h/day indicating thermal stability of the film. 相似文献
108.
Sun Shufen 《Acta Mechanica Sinica》1987,3(1):44-51
The coupled model has been developed in this study for moisture transport and beat exchange in soil. The model is driven by
atmospheric conditions measured in a field. The concept that soil has a surface resistance to evaporation is introduced in
order to relate the evaporation from surface with the vapour flux in air. With the use of this concept, the simulation results
agree quite well with the measured data. 相似文献
109.
采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明,LSMO薄膜属于正交晶体结构,薄膜取向与膜厚度 有关,当膜厚度为450nm或680nm时,主要取向〈200〉,而膜厚度为900nm时取向为〈020〉 :根据离子对相互作用能和谐振子模型,得到了红外吸收与Mn—O—Mn键长和键角关系式,6 00cm-1附近红外吸收与晶格常数b的变化有关;块体与薄膜的金属—绝缘体转变 温度(TMI)存在较大差别,薄膜转变温度显著低于块体,并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化,引起键角改变及JT效应是转变温度变化的主 要原因.
关键词:
单晶硅
晶格常数
金属—绝缘体转变温度
应力诱导 相似文献
110.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献