Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes

We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c‐Si surfaces by dry exothermic plasma‐less reaction of F species with Si in atmospheric pressure conditions and then modified using a short post‐etching process. Nanotextured multicrystalline wafers are used to prepare Al‐BSF solar cells using industrially feasible solar cell proc‐ essing steps. In comparison to the reference acidic textured solar cells, the nanostructured cells showed gain in short circuit current (J_sc) of up to 0.8 mA/cm² and absolute gain in conversion efficiency of up to 0.3%. The best nanotextured solar cell was independently certified to reach the conversion efficiency of 18.0%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

DMFC两相流及其对传质影响的研究

采用自制的实验系统对液态进料直接甲醇燃料电池(DMFC)阳极交叉指状流道内的两相况功特性进行了可视化实验研究.自制的DMFC单电池带有透明窗口,采用镀金的不锈钢阴极极板和透明的聚碳酸脂阳极流场板,电解质为Nafion117膜.实验过程中燃料电池的进口总管和出口总管是水平的,进口流道和出口流道是竖直的.实验发现,出口流道中典型的两相流流型是泡状流、而出口总管中的典型流型是弹状流.进口流道中的气弹和气柱导致了阳极传质恶化.     

自动显微图像处理系统的研制

为实现病理切片的自动检测研制了一套显微图像处理系统。该系统由三目照相生物显微镜、ＣＣＤ摄像机和带图像处理卡的个人计算机组成。本文介绍显微镜的自动调焦、自动搜索及状态分析判断等系统驱动功能的原理和设计，最后给出该系统临床应用的部分结果     

甚高频等离子体增强化学气相沉积制备微晶硅太阳电池的研究

采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明：在实验的硅烷浓度和功率范围内，随硅烷浓度的降低和功率的加大，对应电池的开路电压逐渐变小；硅烷浓度的不同对电池的短路电流密 度有很大的影响，但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池，N层最好 是非晶硅，这是因为一方面可以降低对电流的横向收集效应，另一方面也降低了电池的漏电概率，提高了电池的填充因子. 关键词： 微晶硅太阳电池 甚高频等离子体增强化学气相沉积     

新型Gd基T2造影剂的制备和应用

设计并合成了结构为TPP-Lys（Acp-DOTA-Gd）-COOH（简称Gd-DOTA-TPP）的小分子磁共振探针,通过电转染的方式用探针标记人源脐带间充质干细胞（hMSCs）.11.7 T磁共振成像（MRI）扫描结果表明,Gd-DOTA-TPP标记的hMSCs在细胞内Gd含量为9×10⁹ Gd/cell时,T₂加权信号强度即可低至背景信号强度,呈现较强暗信号.将Gd-DOTA-TPP标记的hMSCs移植入小鼠脑室,可明显提高移植干细胞在MRI设备上的检测灵敏度,检测限可低至10³个细胞.     

Light scattering of nanocrystalline TiO2 film used in dye-sensitized solar cells

This paper studies the light scattering and adsorption of nanocrystalline TiO2 porous films used in dye-sensitized solar cells composed of anatase and/or rutile particles by using an optical four-flux radiative transfer model. These light properties are difficult to measure directly on the functioning solar cells and they can not be calculated easily from the first-principle computational or quantitative theoretical evaluations. These simulation results indicate that the light scattering of 1 25 nm TiO2 particles is negligible, but it is effective in the range of 80 and 180 nm. A suitable mixture of small particles （10 nm radius）, which are resulted in a large effective surface, and of larger particles （150 nm radius）, which are effective light scatterers, have the potential to enhance solar absorption significantly. The futile crystals have a larger refractive index and thus the light harvest of the mixtures of such larger rutile and relatively small anatase particles is improved in comparison with that of pure anatase films. The light absorption of the 10μm double-layered films is also examined. A maximal light absorption of double-layered film is gotten when the thickness of the first layer of 10 urn-sized anatase particles is comparable to that of the second larger rutile layer.     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

Correlation between microstructure and property of electroless deposited Pt counter electrodes on plastic substrate for dye-sensitized solar cells

Flexible Pt counter electrodes (CEs) were prepared on indium-doped tin oxide coated polyethylene naphthalate (ITO-PEN) substrate by electroless deposition. The correlation between the microstructure and the property of the Pt CEs was investigated. Results showed that isolated Pt nanoparticles were uniformly distributed on the ITO surface at a short deposition duration, and then grew with the deposition duration, leading to the interconnection of adjacent Pt nanoparticles. The interconnection of Pt nanoparticles was beneficial to the electrical property of the Pt CEs, while it was unfavorable to the electrocatalytic property of the Pt CEs. A microstructure model was proposed to explain the correlation between the microstructure and the property of the Pt CEs. In addition, the Pt CEs showed low charge transfer resistance (1.66-0.58 Ω cm²), which was comparable to that (1.16 Ω cm²) of the conventional sputtered Pt CE. The high electrocatalytic property of the electroless deposited Pt CEs makes the assembled DSCs present comparable energy conversion efficiency of the DSCs using sputtered Pt CE.