Na离子和Cl离子引起He原子直接多重电离过程的研究

利用2～8 MeV的Naq+、Clq+(q=2,3,4,5)轰击氦原子,对碰撞的直接多重电离过程进行研究.实验采用反冲离子-散射离子飞行时间符合技术,通过反冲离子飞行时间谱区分不同价态反冲离子;利用静电偏转和位置灵敏探测技术区分不同电荷态散射离子;结合CAMAC-PC多参数获取系统得到一定价态散射离子所对应的反冲离子电荷态分布谱;经分析该谱得到直接多重电离截面与直接单电离截面之比R21.讨论了R21随入射离子速度和电荷态的变化关系.     

Lattice path combinatorics and asymptotics of multiplicities of weights in tensor powers

We give asymptotic formulas for the multiplicities of weights and irreducible summands in high-tensor powers V_λ^⊗N of an irreducible representation V_λ of a compact connected Lie group G. The weights are allowed to depend on N, and we obtain several regimes of pointwise asymptotics, ranging from a central limit region to a large deviations region. We use a complex steepest descent method that applies to general asymptotic counting problems for lattice paths with steps in a convex polytope.     

Weighted approximation of functions on the real line by Bernstein polynomials

The authors give error estimates, a Voronovskaya-type relation, strong converse results and saturation for the weighted approximation of functions on the real line with Freud weights by Bernstein-type operators.     

Evaluation of quadrature schemes for the discrete ordinates method

After reviewing the presently available quadrature schemes for the discrete ordinates method, the accuracy of different schemes is analyzed and evaluated. It is shown from a comprehensive error analysis that the moment conditions have to satisfied not only for the principal coordinates directions, as it is mostly carried out, but for any arbitrary test direction. Among the schemes with approximately 50 discrete ordinates the DCT-020-2468 quadrature was found to give the best accuracy. The highest accuracy among all schemes is achieved by the LC-11 quadrature which requires 96 discrete ordinates. This scheme is rarely used up to date and deserves more attention for high accuracy predictions.     

A first-principles study of surface and subsurface H on and in Ni(1 1 1): diffusional properties and coverage-dependent behavior

Periodic, self-consistent, density functional theory (GGA-PW91) calculations are performed for both surface and subsurface atomic hydrogen on and in Ni(1 1 1). At a low coverage (θ=0.25 ML), the binding energies (BEs) of a hydrogen atom in surface fcc, subsurface octahedral (first layer), and subsurface octahedral (second layer) sites are −2.89, −2.18, and −2.11 eV, respectively. The activation energy barriers for hydrogen diffusion from the surface to the first subsurface layer and from the first to the second subsurface layer are estimated to be 0.88 and 0.52 eV, respectively. In the entire coverage range studied, hydrogen occupies surface fcc and hcp sites and subsurface octahedral sites. In addition, the magnitude of the BE per hydrogen atom and the magnetization of the nickel slabs both decrease as hydrogen coverage increases. Vibrational frequencies of hydrogen at various surface and subsurface sites are calculated and are in reasonable agreement with experimental data. A phase stability calculation with a 2 × 2 surface unit cell shows that a p(2 × 2)-2H overlayer structure (θ=0.5 ML) and a p(1 × 1)-1H structure (θ=1.0 ML) are stable at low hydrogen pressures, in agreement with numerous experimental results. A very large increase in pressure is required to populate subsurface sites. After such an increase occurs, the first subsurface layer is filled completely.     

Accelerated glycosylation under frozen conditions

O-Glycosylations using thiomethyl glycosides as donors were compared under both frozen and unfrozen conditions. In the presence of MeOTf as a promoter, enormous rate acceleration was observed when the glycosylation was conducted in p-xylene below its freezing point.     

第二类变型Bessel函数的Chebyshev逼近

第二类变型Bessel函数Kn(z)在自变量趋于无穷时就是指数变小的，使用多项式逼近的方法求解往往误差很大．采用指数变换和J．P．Boyd的有理Chebyshev多项式计算第二类变型Bessel函数，得到了令人满意的在较大范围内有效的解．     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

类锂离子C^3＋激发态（1s^2 2p）^2P光电离的计算

文中首次运用R—矩阵方法，在三态密耦近似下计算了类锂离子C^3 激发态(1s^2 2p)^2P光电离截面，主要给出了不同过程和不同分波的光电离截面。计算结果显示了光电离过程中非常丰富的Rydberg系列共振结构。     

On the number of curves of genus 2 over a finite field

In this paper we compute the number of curves of genus 2 defined over a finite field k of odd characteristic up to isomorphisms defined over k; the even characteristic case is treated in an ongoing work (G. Cardona, E. Nart, J. Pujolàs, Curves of genus 2 over field of even characteristic, 2003, submitted for publication). To this end, we first give a parametrization of all points in , the moduli variety that classifies genus 2 curves up to isomorphism, defined over an arbitrary perfect field (of zero or odd characteristic) and corresponding to curves with non-trivial reduced group of automorphisms; we also give an explicit representative defined over that field for each of these points. Then, we use cohomological methods to compute the number of k-isomorphism classes for each point in .