激光偏振编码制导中铌酸锂晶体编码技术研究

针对激光驾束制导系统光束能量调制方式的原理缺陷,讨论了用铌酸锂晶体的电光效应实现空间偏振编码的原理。对铌酸锂晶体的电光效应进行了理论分析,在此基础上设计了基于普科尔效应的空间偏振编码调制器。确定了X轴方向加电场的最佳运用方式,使得经过编码器后的线偏振光具有理想的偏振态梯度分布。对接收数据处理方式进行了讨论,得到了差和比方式对旋转不敏感的结论。在实验室中用可见光进行了近场实验,获得了从最上方近似右旋圆偏振光到中间的线偏振光再到最下方的左旋圆偏振光的偏振态分布。实验曲线表明获得了与理论计算基本一致的结果。     

量子阱、超晶格结构的线性电光效应研究进展

本文综合比较了各种用以解释量子阱、超晶格结构线性电光效应(LEO)的理论和模型,如:EFT理论,GBC理论,HBF模型等;并按三种量子阱结构:阱区和势垒层具有一种相同原子的I型量子阱(CA QWs)、阱区和势垒层不具有相同原子的I型量子阱(NCA QWs)以及II型量子阱,给出了具体的量子阱超晶格结构线性电光效应的研究现状;最后总结了目前硅基量子阱、超晶格LEO的一些研究结果,并分析指出了对其作进一步研究的发展方向。     

Polymers for Electro‐Optical Modulation

Second‐order nonlinear optical (NLO) properties of polymeric materials have been attracting a lot of attention, especially for such potential applications as fast waveguides electrooptic (EO) modulation and frequency‐doubling devices. For these photonic applications, the performance of the NLO materials has to be optimized. This requires not only a fundamental knowledge of inter‐relationship between their chemical and NLO properties, but new technologies competitive or superior to existing ones as well. This review focuses on the synthesis of NLO polymers including chromophore design, and the comparison among comprehensive EO polymer systems. Moreover, characterization and device fabrication of electro‐optical polymer planar waveguides are also reported in this review.     

High Accuracy and High Sensitivity Measurements of the Electrooptic Effect in Undoped and MgO-Doped LiNbO3 Crystals

Accurate measurements of the composite electrooptic (EO) coefficients r_c consisting of the EO coefficients r₁₃, r₃₃, and the piezoelectric constant d₃₁ in undoped and MgO-doped LiNbO₃ (LN) were made by extracting the fundamental and third harmonic components from photo-detection signals of the parallel Nicol optics including the LN crystal driven by minimal sinusoidal voltage. The analysis of relationship between multiple-reflection rays in the EO crystal and the accuracy of measurement indicates that anti-reflection films must be coated on the end faces of the crystal for highly accurate measurements. Measured values of r_c of undoped and MgO-doped LN crystals at a wavelength of 632.8 nm were 19.8 ± 0.1 pm/V and 19.2 ± 0.1 pm/V, respectively.     

旋光晶体在偏光干涉实验中电光效应的研究

研究了旋光晶体在偏光干涉实验中的电光效应，给出了旋光晶体在偏光干涉实验中出射光强与晶体旋光性之间关系的表达式I—Ao^2cos^2[β-（π/λ）（n1-nr)l]，以及与旋光晶体电光效应之间关系的表达式I—Ao^2cos^2[β-（π/λ）（n1-nr)l (π/λ）（n2-n1)l]。根据这些表达式给出的关系，将典型的旋光晶体La3Ga5SiO14制作成了电光Q开关，像那些用无旋光性晶体制作的Q开关一样工作良好。在中等功率输出的激光器中，La3Ga5SiO14晶体电光Q开关有可能取代氘化磷酸二氢钾(DKDP)晶体电光Q开关。     

场效应晶体管—自电光效应器件灵巧像素的实验研究

在一块印刷电路板上通过将自电效应器件（ＳＥＥＤ）与ＧａＡｓ场效应晶体管（ＦＥＴ）进行互连制作一种简单的场效应晶体管－自电光效应器件（ＦＥＴ－ＳＥＥＤ）灵巧像素，这种灵巧像素由一个输入自电光效应器件，一个输出自电光效应器件及一个ＧａＡｓ场效应晶体管放大器构成，设计了一个光学系统，在这个系统以对这种灵巧像素进行了演示及测试，并对其工作原理及过程进行了描述。     

基于双音外差的电光相位调制器半波电压自校准测量方法

电光相位调制器是光纤通信系统、微波光子系统和相干光通信系统中的关键器件之一. 作为器件本征参数, 电光相位调制器的半波电压通常利用光谱方法和电谱方法进行测量. 光谱方法受到光源线宽和光谱仪分辨率限制, 测量的分辨率较低; 电谱方法则需要光电检测之前将相位调制转换成强度调制, 电谱方法的主要困难在于需要对探测器的不平坦响应进行额外校准. 提出了利用双音外差实现电光相位调制器半波电压自校准测量新方法, 该方法利用双音电光相位调制的边带与移频光载波的外差拍频, 对外差拍频信号进行频谱分析, 获得电光相位调制器的半波电压; 通过设定双音调制信号的频率关系, 克服了探测器光电转换中的不平坦频率响应, 实现了自校准测量. 该方法可扩展探测器和频谱仪的测试频率两倍以上, 节省至少一半的带宽需求. 与光谱测量方法相比, 该方法测试分辨率大幅提高且避免了光源线宽的影响; 与传统电域测量方法相比, 该方法无须额外校准, 无驱动功率和工作波长限制, 且对测试仪器带宽需求降低一半以上. 实验证实了所提方法获得的电光相位调制器半波电压的测量结果与光谱分析法获得的结果一致, 且大幅度地提高了测量范围和分辨率. 该方法提供了非常简单的电光相位调制器微波特性化分析方法, 对其他光电子器件分析也提供了参考.     

电光与磁光效应的互补特性及其传感应用

研究了兼有电光效应和磁光效应的晶体内电光与磁光效应的互补特性及其传感应用. 在光强度调制条件下, 晶体中偏振光波的电光调制与磁光调制具有互相补偿的效果, 从而能够使输出光强度保持为一个固定值. 基于这种互补特性, 提出了一种利用单块闪烁锗酸铋(Bi₄Ge₃O₁₂, BGO)晶体的电光补偿型光学电流(磁场)传感器, 其光学传感单元由两个偏振器和一块平行四边形BGO晶体组成. 该晶体自身能够产生π/2的光学相位偏置, 同时兼用作电流传感和电光补偿元件, 通过控制BGO晶体的外加电压, 能够实时补偿被测电流(磁场)变化引起的磁光旋转角和输出光强度的变化, 从而实现电流(磁场)的闭环光学测量. 实验测量了5.0 A范围内的工频交流电流, 所需要的电光补偿电压约为21.2 V/A, 补偿电压与被测电流之间具有良好的线性关系, 其非线性误差低于1.7%.     

Robust 2 × 2 Multimode Interference Optical Switch

A robust 2 × 2 photonic switch based on multimode interference (MMI) effects is proposed. We demonstrate that the device is very tolerant to material modifications and typical fabrication errors. This is a result of the MMI design and the high symmetry of the switch. The key parameter for the operation of the device is that the input light forms a pair of well defined self-images exactly in the middle of the switch. The index modulated regions precisely overlap the positions where these two self-images are formed. By creating identical contact features at these locations, any refractive index change induced in the material as a result of electrical isolation will be replicated in both self-images, and therefore the off-state output will not be altered. In the same way, offset and dimension errors are reflected symmetrically on both self-images and do not seriously affect the imaging. The characteristics of the switch under different scenarios are investigated using the finite difference beam propagation method. By employing this configuration, crosstalk levels better than −20 dB are achievable over a wavelength range of 100 nm while maintaining polarization independence.     

Analysis of quadratic electrooptic response of BaTiO<Subscript>3</Subscript> crystal in ferroelectric phase

Using the example of BaTiO₃ in a ferroelectric phase it is shown that a large difference in magnitudes of individual linear electrooptic coefficients may be a reason of additional indirect quadratic contributions that are independent of real quadratic coefficients. For some directions of the applied field and light, the indirect contributions may be even larger than the real quadratic ones. Independently of nonlinear distortions that can affect applicability of technical devices, a large difference between linear electrooptic coefficients may lead to serious problems in measurements of the real quadratic electrooptic effect. The analysis is based on the extended Jones matrix calculus applied to a Gaussian beam.