软x射线近贴显微技术

软x射线近贴显微技术不但可使活的生物样品成象,分辨率高于光学显微镜,而且人为的样品准备程序在该技术中都可避免。本文描述了用高功率激光打靶产生的等离子体作为软x射线源而进行的近贴显微研究,并得到了分辨率好于1μm的结果。     

多电子束契伦柯夫自由电子激光振荡器

我们对多电子束契伦柯夫自由电子激光进行了首次实验研究。280A,500kV的电子束被引入一多介质矩形谐振腔,在频率为33.4GHz处产生了1.7MW的契伦柯夫相干受激辐射。互作用效率为1.2％。     

Combined X-ray-electron imaging techniques: Limitations on lateral resolution

Capabilities of the imaging techniques, in which X-rays are converted to electrons and then the emitted electrons are registered by means of an electron microscope, are analyzed, the focus being on the factors limiting lateral resolution at the stage of electron emission. Bearing in mind the tendency to use harder synchrotron X-rays for some combined X-ray-electron microscopy methods, calculations were made for two significantly different X-ray energies: E = 1.828 keV (K-edge of Si) and E = 11.923 keV (L₃-edge of Au). By using Monte Carlo simulations of the electron trajectories beneath the surface of the sample we show that the radius of the spot from which photoelectrons are emitted could be as small as 1 nm. However, when proper account is taken of an entire electron cascade associated with the re-building of electron shells after photoelectron emission, spots more than one order of magnitude larger result, limiting the best lateral resolution to 20–30 nm.     

变参数波振器中小信号增益公式

利用微扰展开技术推导出变参数波振器的小信号增益两个近似求积表达式并将其计算结果与数值模拟结果进行了比较,二者吻合很好。利用近似解析式对小信号增益进行了初步探讨,得到了电子入射能量可低于初始谐振能,能散度允许范围受波振器设计影响以及降低锥度改变率可提高小信号增益等新结论。     

Chemical imaging in biology and medicine using ion microscopy

The ability to quantitatively map the distribution of elements on the micrometer scale and smaller with high sensitivity and isotopic discrimination is unique to ion microscopy. The information contained in ion images can be crucial to the study of the solid state, where chemical heterogeneity is often directly related to observed behavior. The tools of digital image processing allow the extraction of quantitative information from the image data. These techniques coupled with improved instrumentation for the detection of ion images drastically increase the problem solving capabilities of the ion microscope. The use of such methods and instrumentation in the ion microscopic analyses of cell cultures and tissues of biological and biomedical relevance will be discussed.     

A density functional theory computational study of the role of ligand on the stability of CuI and CuII species associated with ATRP and SET‐LRP

Atom transfer radical polymerization (ATRP) and single electron‐transfer living radical polymerization (SET‐LRP) both utilize copper complexes of various oxidation states with N‐ligands to perform their respective activation and deactivation steps. Herein, we utilize DFT (B3YLP) methods to determine the preferred ligand‐binding geometries for Cu/N‐ligand complexes related to ATRP and SET‐LRP. We find that those ligands capable of achieving tetrahedral complexes with Cu^I and trigonal bipyramidal with axial halide complexes with [Cu^IIX]⁺ have higher energies of stabilization. We were able to correlate calculated preferential stabilization of [Cu^IIX]⁺ with those ligands that perform best in SET‐LRP. A crude calculation of energy of disproportionation revealed that the same preferential binding of [Cu^IIX]⁺ results in increased propensity for disproportionation. Finally, by examining the relative energies of the basic steps of ATRP and SET‐LRP, we were able to rationalize the transition from the ATRP mechanism to the SET‐LRP mechanism as we transition from typical nonpolar ATRP solvents to polar SET‐LRP solvents. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 4950–4964, 2007     

Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces.