TFEL器件发光层的电场随外电压的变化

本文利用弗朗兹-凯尔迪效应研究了TFEL器件发光层中的电场随外加电压的变化。用此方法算得的发光层中的电场同把器件各层当作只起绝缘作用的电介质时算得的电场强度,虽然数量级相同,但数值上有差别,特别当外加电压达到发光阈值电压时,差别更为明显。     

Diamine的光、电性质及其在有机薄膜电致发光器件中的应用

合成了芳香族二胺类衍生物(diamine),测定了它的光、电性质.制备了diamine作为空穴传输层的二层结构有机薄膜电致发光器件,使器件的发光亮度相对单层器件有了很大的提高.并用不同区域掺杂的方法,探讨了电致发光机理.分析、讨论了激子的形成和复合区域,较好地解释了单、双层器件的不同的电流电压关系和不同的亮度电压关系.从激子的扩散方程出发,对双层掺杂器件的发光强度比数据进行了拟合,确证了激子的扩散模式.     

(Zn、Cd)S:Cu、Br黄色交流电致发光材料的晶体结构和发光特性

本文首次提出一种制备黄色交流粉末电致发光材料的新方法.在以ZnS为基质的绿色材料的基础上,低温扩散CdS,获得系列黄材料.并测量了晶体结构和发光特性.     

薄膜电致发光器件中SiO2加速作用的直接证据

本文通过包含CdS层的薄膜电致发光(TFEL)器件的有关特性的研究,直接证明了SIO₂对CdS中产生的电子有良好的加速作用,并获得了阈值电压低、B-V特性好,亮度较高的红色TFEL器件.我们将硫化镉蒸镀于电致发光器件中,测量这些器件的电学和光学特性,发现含CdS的样品的传导电荷明显大于不含CdS的样品,这说明硫化镉层可以提供较多的电子.但是,样品ITO/SiO₂/ZnS:Sm³⁺/SiO₂/CdS/Al的发光效率低于不含硫化镐的样品,这说明这些电子在进入ZnS层的过程中能量有所降低.为了提高这些电子的能量,我们制备了样品ITO/SiO₂/ZnS:Sm³⁺/SiO₂/CdS/Al,使硫化镉中产生的电子先经过SiO₂层,再进入发光层.测量结果表明这一样品的最大亮度和发光效率与上述含硫化镉的样品相比分别提高了2.5个和0.5个数量级,与不含硫化镉的样品的亮度接近,但其阈值电压较低,亮度-电压(B-V)曲线上升部分较陡,且有一段饱和区.在这一样品达到饱和的电压下,不含硫化镉的样品才刚刚起亮,这说明该样品的发光主要是由于硫化镉增加的电子数目对发光的贡献.同时这些电子在SiO₂中得到了明显的加速.     

Blue/green light‐emitting diode based on diethyl[N‐arylmethylenethiobenzahydrazonato]gallium complexes

Three diethylgallium complexes of type Et₂GaL [L = N‐(4‐methoxy) benzylidenethiobenzahydrazonato ( 1 ), N‐(4‐N,N‐dimethylamino)benzy lidenethiobenzahydrazonato ( 2 ) and N‐(9‐anthryl)methylenethio benzahydrazonato ( 3 )] were synthesized by the reaction of triethylgallium with appropriate N‐arylmethylenethiobenzahydrazones. The compounds obtained were characterized by elemental analysis, ¹H NMR, IR and mass spectroscopy, respectively. Monolayer light‐emitting diodes based on the diethyl[N‐arylmethylenethio benzahydrazonato]gallium doped poly(vinylcarbazole) were fabricated using a spin coating method. The photoluminescent and electroluminescent emission spectra of 1 and 3 were measured (429 and 479 nm for 1 and 3 , respectively). The electroluminescent properties of 1 and 3 were also studied. The electroluminscence bands are located in the blue/green region (465 and 510 nm for complexes 1 and 3 , respectively). Copyright © 2006 John Wiley & Sons, Ltd.     

Synthesis,photophysics, theoretical modeling,and electroluminescence of novel 2,7‐carbazole‐based conjugated polymers with sterically hindered structures

2,7‐dibromo‐N‐hexylcarbazole is successfully synthesized in three steps with an overall 37% yield. Novel 2,7‐carbazole‐based sterically hindered conjugated polymers are further synthesized. In the backbone structure of polymer P1 , alkylated bithiophene moiety is β‐substituted with dodecyl chains on both thiophene rings, adopting the tail‐to‐tail configuration. While for polymers P2 and P3 , partially planarized thieno[3,2‐b]thiophene moiety ( P2 ) and β‐pentyl substituted thieno[3,2‐b]thiophene ( P3 ) are incorporated. All polymers demonstrate efficient blue‐to‐green light emission, good thermal stability (T_d ≥ 379 °C), and high glass transition temperatures (T_g = 118 °C). The optical and electronic properties of the resulted polymers are tuned by the incorporated alkyl chains. For instance, the incorporation of β‐pentyl group in thieno[3,2‐b]thiophene moiety endows P3 with blue‐shifted photophysical spectra, reduced fluorescence quantum yield and larger band gap in comparison with P2 . The steric effect of incorporated alkyl chains is further illustrated by geometry optimization of three model oligomers (analogues to the repetition units of P1–P3 ) using density functional theory. Sterically hindered polymers P1 and P2 exhibit high charge transport ability and moderate electroluminescent properties in primarily tested single‐layer light‐emitting diodes (configuration: ITO/PEDOT:PSS/Polymer/Ca/Ag). © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 7725–7738, 2008     

Luminescence in ZnS: La and ZnS: (Mn,La) phosphors

The photo (PL) and electro (EL) luminescence in ZnS: MnLa and ZnS: La have been studied. The enhancement and quenching of emission bands have been observed on the simultaneous application of sinusoidal field and photons. The wave shape, voltage, frequency and temperature dependence of EL brightness have been reported. A study of the phosphorescence and thermoluminescence of these phosphors is also carried out and it is observed that the trap-depth changes slowly with temperature and activator concentration. An attempt has been made to calculate the trap depth by studying temperature dependence of EL brightness. The results are reported and discussed.     

Electroluminescence kinetics ofp-n-transitions with leakages

The kinetics of the decay in the electroluminescence intensity after gating a rectangular pulse of current in the p-n-transition with inhomogeneities, in particular, accumulations of dislocations is calculated. The basic assumptions are: on gating the rectangular pulse of current, a portion of the electrons injected into the thin p-region is extracted into the n-region, whereas the same number of electrons are injected into the inhomogeneity where they recombine without emission; the intensity of nonradiative recombination on the inhomogeneity is limited by drift of majority charge carriers (by leakages). It is shown that nonradiative recombination on inhomogeneities leads to nonexponential kinetics of electroluminescence, whose instantaneous relaxation time decreases with time. Odessa State Naval Academy, 8 Didrikhson St., Odessa, 270029, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 450–453, May–June, 1998     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光