Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Facile Construction of 3D Reduced Graphene Oxide Wrapped Ni3S2 Nanoparticles on Ni Foam for High‐Performance Asymmetric Supercapacitor Electrodes

3D reduced graphene oxide (rGO)‐wrapped Ni₃S₂ nanoparticles on Ni foam with porous structure is successfully synthesized via a facile one‐step solvothermal method. This unique structure and the positive synergistic effect between Ni₃S₂ nanoparticles and graphene can greatly improve the electrochemical performance of the NF@rGO/Ni₃S₂ composite. Detailed electrochemical measurements show that the NF@rGO/Ni₃S₂ composite exhibits excellent supercapacitor performance with a high specific capacitance of 4048 mF cm^?2 (816.8 F g^?1) at a current density of 5 mA cm^?2 (0.98 A g^?1), as well as long cycling ability (93.8% capacitance retention after 6000 cycles at a current density of 25 mA cm^?2). A novel aqueous asymmetric supercapacitor is designed using the NF@rGO/Ni₃S₂ composite as positive electrode and nitrogen‐doped graphene as negative electrode. The assembled device displays an energy density of 32.6 W h kg^?1 at a power density of 399.8 W kg^?1, and maintains 16.7 W h kg^?1 at 8000.2 W kg^?1. This outstanding performance promotes the as‐prepared NF@rGO/Ni₃S₂ composite to be ideal electrode materials for supercapacitors.     

核类似铜酸盐超导模型的su_s(1,1)su_d(1,1)代数结构

由Iachello提出的核类似铜酸盐超导模型具有su(3)代数结构,其平均场近似下的Hamilton量可以写成su(3)生成元的线性组合.通过代数生成元的实现,该模型约化的Hamilton量具有Su_s(1,1)SU_d(1,1)代数结构,利用相干算子U(θ,φ)的幺正变换,可得到系统约化Hamilton量的能隙方程及本征值,发现应用不同代数结构求解会得到不同侧重点的分析结果.     

一维光子晶体斜入射波包的带隙结构

对波包的任意傅里叶分量进行坐标变换后,利用转移矩阵法推导出波包斜入射情形下一维光子晶体的色散关系表达式,利用色散关系曲线分析得出波包斜入射的第一带隙结构,与以往平面波的第一带隙结构不同,波包的带隙宽度小于平面波的带隙宽度,并且在位置上前者带隙包含在后者内部.比较了一维光子晶体分别在波包入射与平面波入射情形下带隙位置和宽度,分析了波包中心入射角的变化以及波包的角分布范围的变化对带隙结构的影响,得到了一维光子晶体对波包斜入射的带隙结构的基本特征,确定了计算波包带隙能够近似当作平面波处理的条件.研究表明,波包的带隙结构受入射角大小和波包角分布范围的影响.入射角越小,波包入射的带隙结构越接近平面波;波包的角分布范围越小,光子晶体对波包的带隙宽度和位置越接近平面波.     

Electrochemically induced oxidative cyclization of 2,3‐dihydroxypyridine. Synthesis of a novel highly oxygenated heterocyclic compound

Electrochemical oxidation of 2,3‐dihydroxypyridine in aqueous phosphate buffer solution at a glassy carbon electrode has been studied using cyclic voltammetry and controlled potential coulometry. The results indicate that oxidation of 2,3‐dihydroxypyridine on glassy carbon electrode shows an irreversible feature in aqueous solution. This data indicates that the electrochemically generated pyridindione is unstable and via an oxidative conversion pathway converts to a novel highly oxygenated heterocyclic compound. By means of the obtained electrochemical data, an efficient, one‐pot method for the synthesis of this heterocyclic compound based on the oxidative cyclization of 2,3‐dihydroxypyridine under green conditions, and in a good yield and purity is described. Copyright © 2011 John Wiley & Sons, Ltd.     

Effect of defect configuration on the localization of phonons in two-dimensional phononic crystals

Effects of defect location on the defect frequency and the localization of phonons are investigated in two novel kinds of model, created by moving the location of the native cylinder and inserting an ad-cylinder in the central cellular respectively. The results show that the defect frequency in Model 1 is only related to the distance, while in Model 2, is related not only to the distance, but also to the moving direction. From the pressure distribution, obvious localization phenomenon is found. The position and shape of the localized energy are varied with the position of the defect.     

Gap functions and global error bounds for differential variational–hemivariational inequalities

This paper concerns with the study of a differential variational–hemivariational inequality (DVHVI, for short) in infinite-dimensional Banach spaces. We first introduce the new concept of gap functions for the variational control system of (DVHVI). Then, we consider two kinds of gap functions which are regularized gap function and Moreau–Yosida regularized gap function, respectively, and examine the relevant properties of the gap functions. Moreover, two global error bounds which depend implicitly on the regularized gap function and the Moreau–Yosida regularized gap function, accordingly, are obtained. Finally, in order to illustrate the applicability of the theoretical results, we investigate a coupled dynamic system which is formulated by a nonlinear reaction–diffusion equation described by a time-dependent nonsmooth semipermeability problem.     

基于光子晶体带隙特性的反射式多通道滤光片设计

反射式多通道滤光片在光学通讯、光学成像、遥感高光谱等方面有着重要的应用。利用含缺陷一维光子晶体独特的带隙特性,依据其相应的能带理论,设计了一种由金属和介质组成的反射式多通道滤光片。这种滤光片通道的工作范围由光子带隙理论计算得到,通道个数由"光子晶体"缺陷的周期数决定,通道的位置利用等效相位厚度的方法确立。相对于传统的以经验为主的反射式多通道滤光片设计方法,这种基于光子晶体的带隙理论的设计能够从"光子"的角度给出此类反射式滤光元件的设计思路和理论解释。     

All optical NOR and NAND gate based on nonlinear photonic crystal ring resonators

In this paper we proposed optical NOR and NAND gates. By combining nonlinear Kerr effect with photonic crystal ring resonators first we designed a structure, whose optical behavior can be controlled via input power intensity. The switching power threshold obtained for this structure equal to 2 kW/μm². For designing the proposed optical logic gates we employed two resonant rings with the same structures, both rings at the logic gates were designed such that their resonant wavelength be at λ = 1550 nm. Every proposed logic gate has one bias and two logic input ports. We used plane wave expansion and finite difference time domain methods for analyzing the proposed structures.