Stable single longitudinal mode fiber ring laser based on polarization maintaining erbium doped fiber

A stable single longitudinal mode (SLM) fiber ring laser that incorporates polarization maintaining erbium doped fiber (PM EDF) acting as gain medium and saturable absorber is proposed and demonstrated. Both theoretical deviation and experimental result prove that optical intensity is time invariant when the laser operates in single longitudinal mode, the SLM operation can be approximately verified by optical intensity analysis, which is practical to analyze longitudinal mode in the application of engineering. The linewidth of the fiber ring laser is measured by the delayed self-heterodyne interferometery, and an acousto-optic frequency shifter is employed to shift the lasing frequency and eliminate zero frequency interfere. The SLM operation is verified by the scanning Fabry–Perot interferometer, whereas the lasing frequency drift slowly during a period of 2 h, PM EDF is proved to be effective on suppressing mode hopping and selecting longitudinal mode.     

A comparative study on structural and optical properties of ZnO and Al-doped ZnO thin films obtained by ultrasonic spray method using different solvents

Transparent conducting ZnO and Al doped ZnO thin films were deposited on glass substrate by ultrasonic spray method. The thin films with concentration of 0.1 M were deposited at 350 °C with 2 min of deposition time. The effects of ethanol and methanol solution before and after doping on the structural, optical and electrical properties were examined. The DRX analyses indicated that ZnO films have nanocrystalline nature and hexagonal wurtzite structure with (1 0 0) and (0 0 2) preferential orientation corresponding to ZnO films resulting from methanol and ethanol solution, respectively. The crystallinity of the thin films improved with methanol solution after doping to (0 0 2) oriented. All films exhibit an average optical transparency about 90%, in the visible range. The band gaps values of ZnO thin films are increased after doping from 3.10 to 3.26 eV and 3.27 to 3.30 eV upon Al doping obtained by ethanol and methanol solution, respectively. The electrical conductivity increase from 7.5 to 15.2 (Ω cm)⁻¹ of undoped to Al doped ZnO thin films prepared by using ethanol solution. However, for the methanol solution; the electrical conductivity of the film is stabilized after doping.     

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.     

2μm波段全光纤保偏被动锁模掺铥光纤激光器

报道了2μm波段的全光纤保偏锁模掺铥光纤激光器,通过在法布里-珀罗(F-P)腔内加入半导体可饱和吸收镜做为被动锁模器件,采用主振-放大构型,获得了最高输出平均功率为1.08W,重复频率为10.24MHz,脉冲宽度为15.24ps,中心波长为2054.68nm,光谱宽度约为0.3nm的2μm线偏振激光脉冲输出,激光脉冲的消光比为24.17dB。     

采用紫外光提高双掺杂铌酸锂晶体中全息记录的灵敏度和光栅强度

提出了一种在双掺杂铌酸锂晶体中用调制的双紫外光进行非挥发全息记录的方法。与通常的用紫外光敏化的非挥发全息记录相比,这种方法可以大幅度地提高光栅强度和记录灵敏度。联立双中心物质方程和双光束耦合波方程,数值分析了光栅强度和衍射效率随时间的变化并讨论了掺杂浓度和记录光强对紫外光非挥发全息记录机制下光折变效应的影响。研究发现,紫外光记录得到的深浅中心的光栅具有相同的相位,总的光栅（深浅中心光栅的叠加）强度为两光栅强度之和,固定过程中深中心的光栅得到增强;增大深浅中心掺杂的浓度可以提高光栅强度,增大记录紫外光的光强可以增加光栅的强度和记录灵敏度。理论模拟可以证实并预测实验结果。     

DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic Chain

By using density matrix renormalization group （DMRG） method a model for organic molecule-based ferromagnetic chain is proposed. It is found that the ground states of Undoped and doped systems both exhibit ferrimagnetic ordering. The e-e repulsion plays an important role in the stability of the ferromagnetic state either in doped system or undoped system. For the undoped system, each unit cell coatains half of the total spins, which is consistent with Lieb＇s theorem. It is convinced that when the system is doped with one electron, a charge density wave is excited, which decreases the amplitude of spin density wave,therefore acting against the stability of ferromagnetic state.     

ZnO高掺杂Ga的浓度对导电性能和红移效应影响的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,在相同环境条件下建立了浓度不同的由Ga原子取代Zn原子的Zn_1-xGa_xO模型.对低温高掺杂Ga原子的Zn_1-xGa_xO半导体的能带结构、态密度和吸收光谱进行了计算.结果表明:Ga原子浓度越大,进入导带的相对电子数越多,但是电子迁移率反而减小.通过对掺杂和未掺杂ZnO的电导率以及最小间隙带宽度分别进行了比较 关键词： ZnO高掺杂Ga 电导率 红移 第一性原理     

Ultrasonic-assisted degradation of phenazopyridine with a combination of Sm-doped ZnO nanoparticles and inorganic oxidants

Pure and samarium doped ZnO nanoparticles were synthesized by a sonochemical method and characterized by TEM, SEM, EDX, XRD, Pl, and DRS techniques. The average crystallite size of pure and Sm-doped ZnO nanoparticles was about 20 nm. The sonocatalytic activity of pure and Sm-doped ZnO nanoparticles was considered toward degradation of phenazopyridine as a model organic contaminant. The Sm-doped ZnO nanoparticles with Sm concentration of 0.4 mol% indicated a higher sonocatalytic activity (59%) than the pure ZnO (51%) and other Sm-doped ZnO nanoparticles. It was believed that Sm³⁺ ion with optimal concentration (0.4 mol%) can act as superficial trapping for electrons in the conduction band of ZnO and delayed the recombination of charge carriers. The influence of the nature and concentration of various oxidants, including periodate, hydrogen peroxide, peroxymonosulfate, and peroxydisulfate on the sonocatalytic activity of Sm-doped ZnO nanoparticles was studied. The influence of the oxidants concentration (0.2–1.4 g L⁻¹) on the degradation rate was established by the 3D response surface and the 2D contour plots. The results demonstrated that the utilizing of oxidants in combination with Sm-doped ZnO resulting in rapid removal of contaminant, which can be referable to a dual role of oxidants; (i) scavenging the generated electrons in the conduction band of ZnO and (ii) creating highly reactive radical species under ultrasonic irradiation. It was found that the Sm-doped ZnO and periodate combination is the most efficient catalytic system under ultrasonic irradiation.     

Tb掺杂Si纳米线的光致发光特性

以金属Au-Al为催化剂,在温度为1 100 ℃,N₂气流量为1 500 sccm、生长时间为30 min,从Si(100)衬底上直接生长了直径约为50～120 nm、长度为数百纳米的高密度、大面积的Si纳米线。然后,利用Tb₂O₃在不同温度(1 000～1 200 ℃)、掺杂时间(30～90 min)和N₂气流量(0～1 000 sccm)等工艺条件下对Si纳米线进行了Tb掺杂。最后,对Si(100)衬底进行了Tb掺杂对比。室温下,利用荧光分光光度计(Hitachi F-4600) 测试了Tb掺杂Si纳米线的光致发光特性。实验研究了不同掺杂工艺参数(温度、时间和N₂气流量)对Tb3+绿光发射的影响。根据Tb3+能级结构和跃迁特性对样品的发射光谱进行了分析。结果表明,在温度为1 100 ℃,N₂气流量为1 500 sccm、时间为30 min等条件下制备的Si纳米线为掺杂基质,Tb掺杂温度为1 100 ℃,N₂气流量为1 000 sccm、光激发波长为243 nm时,获得了最强荧光发射,其波长为554 nm(5D₄→7F₅),同时还出现强度相对较弱的494 nm(5D₄→7F₆),593 nm(5D₄→7F₄)和628 nm(5D₄→7F₃)三条谱带。Tb掺杂的体Si衬底在波长554 nm处仅有极其微弱的光致发光峰。     

基于非线性偏振旋转效应的多波长掺铥锁模光纤激光器

运用非线性偏振旋转效应实现了一种掺铥锁模多波长光纤激光器.采用环形腔结构,以1 565nm半导体光源为泵浦源,3m长掺铥光纤为增益介质.利用非线性偏振旋转效应进行滤波.当泵浦功率在800mW时,通过调节光纤偏振控制器,激光器出现了被动锁模状态的脉冲输出,脉冲重复频率为3.178MHz,脉冲宽度为617ps.进一步增加泵浦功率,激光器进入多波长输出的工作状态.调节偏振控制器在室温下得到1~5个稳定的波长激光输出,边摸抑制比为40~60dB.