基于非连续能量耗散的滑动摩擦系数计算模型

分析了界面摩擦状态下能量非连续耗散过程,建立了简化条件下晶体材料界面摩擦滑动摩擦系数计算模型.结果表明:在弹性接触状态下,滑动摩擦系数与载荷及实际接触面积无关,当实际接触面积接近名义接触面积时,滑动摩擦系数随载荷增加而减小.在缓慢滑动时,滑动摩擦系数随滑动速度的增高而缓慢增大,相对滑动速度愈高,滑动摩擦系数增大趋势愈显著.滑动摩擦系数随晶格常数的增加而降低,而当晶格常数较大时,其变化对滑动摩擦系数影响较小.同时,滑动摩擦系数随原子的可能温升增加而增大.研究结论对工程应用及相关的理论研究具有一定的参考意义. 关键词： 滑动摩擦系数 非连续能量耗散 界面摩擦     

Franck-Condon simulation of the photoelectron spectrum of AsCl₂ and the photodetachment spectrum of AsCl ₂⁻ employing UCCSD(T)-F12a potential energy functions: IE and EA of AsCl₂

The currently most reliable theoretical estimates of the adiabatic ionization energies (AIE₀) from the X?²B₁ state of AsCl₂ to the X?¹A₁ and ã³B₁ states of AsCl, and the electron affinity (EA₀) of AsCl₂, including ΔZPE corrections, are calculated as 8.687(11), 11.320(23), and 1.845(12) eV, respectively (estimated uncertainties based on basis‐set effects at the RCCSD(T) level). State‐of‐the‐art ab initio calculations, which include RCCSD(T), CASSCF/MRCI, and explicitly correlated RHF/UCCSD(T)‐F12x (x = a or b) calculations with basis sets of up to quintuple‐zeta quality, have been carried out on the X?²B₁ state of AsCl₂, the X?¹A₁, ã³B₁, and ùB₁ states of AsCl, and the X?¹A₁ state of AsCl. Relativistic, core correlation and complete basis‐set (CBS) effects have been considered. In addition, computed UCCSD(T)‐F12a potential energy functions of relevant electronic states of AsCl₂, AsCl, and AsCl were used to calculate Franck–Condon factors, which were then used to simulate the valence photoelectron spectrum of AsCl₂ and the photodetachment spectrum of AsCl, both yet to be recorded. Lastly, we have also computed the AIE and EA values for NCl₂, PCl₂, and AsCl₂ at the G4 level and for SbCl₂ at the RCCSD(T)/CBS level. The trends in the AIE and EA values of the group V pnictogen dichlorides, PnCl₂, where Pn = N, P, As, and Sb, were examined. The AIE and EA of PCl₂ were found to be smaller than those of AsCl₂, contrary to the order expected from the IE values of P and As. © 2011 Wiley Periodicals, Inc. J Comput Chem, 2011     

甲酸Pt电极电化学氧化体系中时间自组织导致的可利用功耗失

在电极化学反应步骤为控制步骤的条件下,对甲酸阳极氧化体系中出现的电化学振荡的阈值及跨越阈值后状态演化的极限环路径进行了系统动力学计算.同时,根据非平衡电极过程的耗散-涨落理论,进一步对跨越振荡阈值前后的临界区与电化学震荡区的极化曲线及功耗谱进行了随机热力学分析计算.研究结果表明,跨越临界区后单位电化学反应功耗谱出现突降...     

Electrochemical control of growth factor presentation to steer neural stem cell differentiation

Let it grow: The conjugated polymer poly(3,4-ethylenedioxythiophene) (PEDOT) was synthesized with heparin as the counterion to form a cell culture substrate. The surface of PEDOT:heparin in the neutral state associated biologically active growth factors. Electrochemical in?situ oxidation of PEDOT during live cell culture decreased the bioavailability of the growth factor and created an exact onset of neural stem cell differentiation.     

Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

A commercially available Element GD, the latest generation of glow discharge mass spectrometry (GDMS), has been used for quantitative analysis of impurities in silicon for photovoltaic applications (PV silicon). In order to be able to accurately measure impurities in silicon, relative sensitivity factors (RSFs) need to be determined. These factors are, currently, given only for steel matrices. In this study, standard silicon materials with known levels of impurities have been produced and independent analytical methods have been used for determining the RSFs for silicon matrices. It has been found that the tuning parameters of the Element GD, mainly the discharge gas flow rate, influence the RSF values. In addition, it has been found that RSF values are matrix specific; RSFs for a silicon matrix differ significantly from those for metallic conductor matrices even under identical instrumental parameters. A study of the relative reproducibility in the quantitative analysis of impurities in solar cells silicon has shown variations between 5% and 12%.     

Influences of Marangoni convection and variable magnetic field on hybrid nanofluid thin-film flow past a stretching surface

Investigations on thin-film flow play a vital role in the field of optoelectronics and magnetic devices. Thin films are reasonably hard and thermally stable but quite fragile. The thermal stability of a thin film can be further improved by incorporating the effects of nanoparticles. In the current work, a stretchable surface is considered upon which hybrid nanofluid thin-film flow is taken into account. The idea of augmenting heat transmission by making use of a hybrid nanofluid is a focus of the current work. The flow is affected by variations in the viscous forces, along with viscous dissipation effects and Marangoni convection. A time-constrained magnetic field is applied in the normal direction to the flow system. The equations governing the flow system are shifted to a non-dimensional form by applying similarity variables. The homotopy analysis method is employed to find the solution to the resultant equations. It is noticed in this study that the flow characteristics decline with augmentation of magnetic, viscosity and unsteadiness parameters while they increase with enhanced values of thin-film parameters. Thermal characteristics are supported by increasing values of the Eckert number and the unsteadiness parameter and opposed by the viscosity parameter and Prandtl number. The numerical impact of different emerging parameters upon skin friction and the Nusselt number is calculated in tabular form. A comparison of current work with established results is carried out, with good agreement.     

辉光放电质谱测量中的相对灵敏度因子研究

辉光放电质谱(GDMS)作为高纯金属和半导体材料分析的强有力工具在国内已得到了大量应用,该文简要介绍了GDMS的基本原理和国内外应用现状,对仪器测量条件的选择、测量重复性进行了详细研究,对于含量在1 mg/kg左右的杂质,测量的重复性将产生约1%～5%的不确定度;对不同金属基体的系列标准物质进行对比研究,发现对于基体相同的样品,杂质元素在较宽的浓度范围内可以使用同样的校正系数进行校正,大部分元素的线性相关系数达到0.999以上,但对于不同基体的样品,测量中仍存在明显的基体效应,一些元素,尤其是轻质量数元素的相对灵敏度因子(RSF)设定值存在较大的偏差,并不适合定量分析,但绝大部分不超过2倍误差,可以满足半定量分析的要求。通过对GDMS定量分析中关键因素的研究,认为相对灵敏度因子的校正是GDMS测量结果可溯源性的关键。