Study of compound particle production in 84Kr-emulsion interactions at 1.7 A GeV

The characteristics of compound particle multiplicity distribution and multiplicity correlations between the compound particle and the grey particle, black particle, shower particle and heavily ionized track particle are investigated in this paper. It is found that the average multiplicities of the grey particle, black particle, shower particle and heavily ionized track particle increase with an increase in the number of compound particles, which can be explained by the impact geometrical model. The compound multiplicity distribution is observed to obey a Koba-Nielson-Olesen (KNO) type of scaling law.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multi‐crystalline silicon (mc‐Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Σ3 and Σ9 GBs in mc‐Si. The density of interface states close to midgap is found comparable for both as‐grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc‐Si based solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

不同气体环境下532nm激光诱导硅表面形貌的研究

研究了在不同气体环境下,利用532nmNd：YAG纳秒脉冲激光累积辐照单晶硅表面形成的微结构,结果表明,在其他条件相同,背景气体不同的情况下,背景气体对硅表面形貌的形成起着重要的作用。具体分析了真空、N2和SF6 3种环境气氛下形成的微结构,结果显示,在sF6中形成的锥形微结构的数密度比在N2和真空中的大,并且锥形具有更大的纵横比;在N2、真空和sF6中形成的微结构尺寸依次减小。sF6气氛下,激光辅助化学刻蚀的效率比在真空和N2气氛中的高。另外,辐照区域边缘有波纹微结构形成,分析认为,该微结构的形成是由表面张力波的冷却导致的。     

多孔硅制备的二维光子晶体生长过程监控

采用单槽电化学腐蚀法在预置有倒金字塔结构的n型单晶硅上制备用于二维光子晶体的多孔硅。利用基于LabVIEW的虚拟仪器技术对实验仪器编程,搭建实时测控系统,实现对反应过程中所需电源的控制,并且实时显示采集到的随时间变化的电压和电流信号,将采集的数据存储在计算机里。实验表明,恒电流供电模式下致使电压剧烈变动,导致多孔硅侧向...     

Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2.     

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

Magnetoelastic properties of Nd6Fe13Cu intermetallic compound

Magnetoelastic properties of Nd₆Fe₁₃Cu intermetallic compound are reported. To study the magnetoelastic behaviour of this compound, the thermal expansion as well as the longitudinal (λ_l) and transverse (λ_t) magnetostriction were measured by using the strain gauge method in the selected temperature range of 80-500 K under applied magnetic fields up to 1.5 T. An anomaly and invar-type effects are observed in the linear thermal expansion and α(T) curves at the Néel temperature. The linear spontaneous magnetostriction decreases sharply by approaching the Néel temperature and also shows the short-range magnetic ordering effects when antiferromagnetic-paramagnetic transition occurs. In the low field region, the absolute values of the anisotropic magnetostriction are small and then start to increase with applied magnetic field. Each isofield curve of the anisotropic magnetostriction passes through a minimum and then approaches to zero with increasing temperature. This magnetostriction compensation arises from the difference in the magnetoelastic coupling constants of the sublattices in this compound.     

部分有机物蝌蚪麻醉活性的预测

基于定量结构-活性相关性（QSAR）原理,研究了49种有机化合物结构与其蝌蚪麻醉活性的内在定量关系。首先应用分子电性作用矢量（molecular electronegativity interaction vector,MEIV）表征49种有机化合物的结构,再采用多元线性回归（MLR）方法建立了相应的QSAR预测模型,最后对所建模型分别进行了内部验证和外部验证。所建模型的复相关系数(Rcum)、留一法(LOO)交互校验复相关系数(RCV)和外部样本校验复相关系数(Qext)分别为0.9415、0.9127和0.9253,证明该模型均具有较高的稳定性和预测能力。