Crystal growth,dielectric and FIR reflectivity studies on PZN(0.91)‐PT(0.09) single crystals

Crystal growth of PZN‐PT single crystals using slow cooling flux technique with PbO flux is reported in this communication. Optimum growth conditions to maximize the amount of perovskite are also suggested. The grown crystals are characterized by dielectric and FIR spectroscopy. Temperature dependence of ε′ very close to the transition temperature shows a first order phase transition. Diffused phase transition and strong frequency dependence of ε′ around transition temperature are also observed. The real part of ε′ was found to obey the relation ε′ – ε_∞ = χ′(T‐T_o)². Dispersion in the ferroelectric phase is suggested to originate from ordering of domains. Competition in the B‐site occupancy by Zn, Nb and Ti ions is suggested to be the origin for the additional modes in the FIR reflectivity at room temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Transfer-Free Graphene Growth on Dielectric Substrates: A Review of the Growth Mechanism

Ever since the more-than-decade-old discovery of application of mechanical exfoliation to obtain graphene, this 2-dimensional material was known for its soaring promise in various applications, owing to its excellent properties. Graphene, most popularly grown on metallic substrates by chemical vapour deposition, needs to be transferred onto dielectric substrates for multiple optical and electronic applications. During such complex and expensive transfer steps, defects are introduced into graphene, which deteriorates the quality and thus, properties of graphene. An alternative approach to surmount these problems is the elimination of the transfer process and to directly grow graphene on dielectric substrates, for future electronic and optical applications. This review presents a comprehensive and an up-to-date account of the development of synthesis methods, challenges and future directions for transfer-free graphene growth on dielectric substrates. Special emphasis is given on the fundamentals of growth mechanisms of various transfer-free graphene synthesis processes on dielectric materials.     

Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology

We report the fabrication of an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL) for n-Si/ALD-HfO₂ gate stack with reduced leakage current. The XRD, AFM, FTIR, FESEM and EDAX characterizations have been performed for structural and morphological studies. Electrical parameters such as dielectric constant (K), interface trap density (D_it), leakage current density (J), effective oxide charge (Q_eff), barrier height (Φ_bo), ideality factor (ƞ), breakdown-voltage (V_br) and series resistance (R_s) were extracted through C-V, G-V and I-V measurements. The determined values of K, D_it, J, Q_eff, Φ_bo, ƞ, V_br and R_s are 14.4, 0.5 × 10 ¹¹ eV⁻¹ cm⁻², 2.2 × 10⁻⁹ A/cm², 0.3 × 10¹³ cm⁻², 0.42, 2.1, −0.33 and 14.5 MΩ respectively. SiON growth prior to HfO₂ deposition has curtailed the problem of high leakage current density and interfacial traps due to sufficient amount of N₂ incorporated at the interface.     

Theoretical studies of the band structure and optoelectronic properties of ZnOxS1−x

In the present article, we have revisited the electronic band gap nature of ZnO_xS_1?x (0 ≤ x ≤ 1) with the recently developed modified Becke and Johnson exchange potential and the calculated band gaps are found consistent with the experimental results. We expect that the band gap bowing parameter obtained in the present work will be close to the experimental one. As the optical properties of ZnO_xS_1?x (0 ≤ x ≤ 1) are very important, therefore different optical parameters like dielectric functions, refractive index and reflectivity are also calculated. The results are illustrated in terms of band structures, band gap energy as a function of oxygen composition, total and partial density of states. © 2012 Wiley Periodicals, Inc.     

Ferroelectric Poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)s: Effect of Molecular Weight on Dielectric Property

A series of ferroelectric poly(vinylidene fluoride-trifluoroethylene- chlorotrifluoroethylene), P(VDF-TrFE-CTFE), have been synthesized by a two-step approach. The first step is copolymerization of VDF and CTFE via solution or suspension methods to produce P(VDF-CTFE) copolymers with different molecular weights. The second step is partial de-chlorination to convert copolymers into P(VDF-TrFE-CTFE) terpolymers with precisely controlled compositions. The effect of molecular weight, molecular weight distribution and uniaxially stretching on the dielectric properties has been investigated over a broad range of temperature and frequency. The X-ray diffraction patterns and DSC curves demonstrate the coexistence of the multiple phases in the terpolymers. The dielectric spectra depict the local relaxation processes and relaxor ferroelectric behavior on the basis of the dielectric loss tangent as a function of temperature.     

Steric hindrance effects on dielectric relaxation and polymerization kinetics of a monoamine–triepoxide mixture,thermochemistry, and diffusion control

Calorimetry and dielectric relaxation spectroscopy during the growth of a polymer network in the stoichiometric mixture of a triepoxide with 4-chloroaniline have been performed in separate experiments to investigate the increase in the relaxation time with the number of covalent bonds. A comparison with the corresponding study of triepoxide–aniline and triepoxide–3-chloroaniline mixtures shows that steric hindrance of the amine group by chlorine slows the molecular dynamics and the relaxation time of the state containing a fixed number of bonds. The polymerization kinetics measured during ramp heating does not yield a reliable activation energy. A recent empirical relation between the relaxation time and the extent of polymerization, and the condition for the onset of diffusion-control kinetics have been examined using the data for these three polymerizing mixtures. The results show substantial deviations from the empirical relation and appear to conflict with our basic understanding of the polymerization process. It is shown mathematically that features attributed to the onset of diffusion-controlled kinetics can arise from thermochemical behavior alone, without reference to the molecular dynamics. An earlier theory for the change in the kinetics of an addition reaction from mass control to diffusion control has been considered, and is seen as relevant to the polymerization reactions. It is argued that the dielectric relaxation rate does not directly indicate the chemical reaction rate because the reorientational motion of the dipolar entities may not be coupled to the rotational and translational diffusion that brings the sterically hindered chemically reacting sites together. © 1998 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 36: 2703–2716, 1998     

Williams-watts dielectric relaxation: A fractal time stochastic process

Dielectric relaxation in amorphous materials is treated in a defect-diffusion model where relaxation occurs when a mobile defect, such as a vacancy, reaches a frozen-in dipole. The random motion of the defect is assumed to be governed by a fractal time stochastic process where the mean duration between defect movements is infinite. When there are many more defects than dipoles, the Williams-Watts decaying fractional exponential relaxation law is derived. The argument of the exponential is related to the number of distinct sites visited by the random walk of the defect. For the same reaction dynamics but with more traps than walkers, an algebraically decaying relaxation is found.     

Ho掺杂的BiFeO_3多铁陶瓷的制备及性能

用固相反应和快速退火冷却法制备了纯的BiFeO_3(BFO)陶瓷和15%Ho掺杂的Bi_(0.85)Ho_(0.15)FeO_3(BHFO)陶瓷,研究了室温下陶瓷的品格结构及其铁电、介电、漏电和磁性能.结果表明,Ho掺杂有助于减少BiFeO_3陶瓷中的杂相,改善其铁电、介电、漏电和磁性能.与BFO陶瓷相比,BHFO陶瓷具有典型的电滞回线;当电场强度为1 50 kV/cm时,其2Pr(剩余极化值)为15 μC/cm~2.同时,BHFO具有比BFO显著增大的介电常数和明显降低的介电损耗.磁性能测试表明,BHFO陶瓷表现出弱的铁磁性.