色散吸收非对称介质光腔中光场的量子理论

利用格林函数方法对色散吸收介质中的电磁场量子化,研究了由色散吸收介质构成的非对称介质光腔中光场的量子理论,并分析了非对称性对光腔量子性质、工作性能等的影响.     

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Annealing-temperature dependence of the thermal stability and chemical bonding states of AlO_xN_y/SiO₂/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry was investigated by synchrotron radiation photoemission spectroscopy (SRPES). Results have confirmed the formation of the AlN and AlNO compounds in the as-deposited samples. Annealing the AlO_xN_y samples in N₂ ambient in 600-800 °C promotes the formation of SiO₂ component. Meanwhile, there is no formation of Al-O-Si and Al-Si binding states, suggesting no interdiffusion of Al with the Si substrate. A thermally induced reaction between Si and AlO_xN_y to form volatile SiO and Al₂O is suggested to be responsible for the full disappearance of the Al component that accompanies annealing at annealing temperature of 1000 °C. The released N due to the breakage of the Al-N bonding will react with the SiO₂ interfacial layer and lead to the formation of the Si₃-N-O/Si₂-N-O components at the top of Si substrate. These results indicate high temperature processing induced evolution of the interfacial chemistry and application range of AlO_xN_y/Si gate stacks in future CMOS devices.     

等离子体/色散吸收介质界面系统中光场量子起伏功率谱

利用格林函数方法量子化色散吸收介质中的电磁场,研究了等离子体/色散吸收介质系统光场的量子性质.理论和数值计算表明,系统的工作状态与所选光场频率密切相关,等离子体介质的阻尼性明显地影响自身区域电场量子起伏功率谱,并且对另一侧介质中电场量子起伏功率谱的变化有连带作用.     

色散吸收一维光学系统中光场量子起伏的功率谱

利用格林函数方法量子化色散吸收介质中的电磁场,针对由三层色散吸收介质组成的一维光学系统,研究其中光场的量子理论,借助起伏一耗散定理给出色散吸收介质光腔中光场量子起伏的功率谱,并通过数值计算结果分析和讨论介质的色散吸收性质对光学器件工作性能的影响。结果表明,系统的工作状态与所选光场频率密切相关,并且每一区域中介质的色散吸收性不但影响自身区域的电场起伏功率谱,而且明显地连带另一侧介质中电场起伏功率谱的变化行为。此结果对于研究复杂的介质分布与结构体系在光通信、现代光学工程、微波技术等领域中的实际应用有着重要的指导意义。     

Analysis of signal optimization problems for dielectric media

The authors have recently presented the results of the numerical implementation of a scheme for designing an incident electromagnetic plane wave which will deposit a maximum amount of energy in any selected portion of an inhomogeneous dielectric slab. This paper presents the mathematical analysis underlying this scheme for solving the signal design problem. The analysis indicates that the maximum energy is achieved by choosing the incident signal to be an appropriately normalized eigenfunction of a compact Fredholm integral operator. A numerical scheme for solving the optimization problem is discussed briefly.This research was supported by Ames Laboratory-USDOE under Contract No. W-7405-Eng-82.     

Bi0.5(Na0.82K0.18)0.5TiO3-BiFeO3 无铅压电陶瓷的介电特性

采用固相反应法制备了系列(1-x)Bi0.5(Na0.82K0.18)0.5TiO3-xBiFeO3(BNKT-BFx)陶瓷.研究了该陶瓷在室温至500 ℃范围内的介电性能.结果表明:该陶瓷的介电温谱与典型弛豫铁电体的特征不同,存在两个介电反常峰和一个介电损耗峰,只在低温介电反常峰温度附近具有明显的介电常数的频率依赖性,居里温度随频率增加基本不变.首次提出了弛豫铁电体分为本征弛豫和非本征弛豫铁电体的理论.通过分析极化前和极化后陶瓷的介电温谱,发现该体系低温介电反常峰温度附近的介电频率依赖性为空间电荷和缺陷偶极子极化引起的非本征弛豫.     

Williams-watts dielectric relaxation: A fractal time stochastic process

Dielectric relaxation in amorphous materials is treated in a defect-diffusion model where relaxation occurs when a mobile defect, such as a vacancy, reaches a frozen-in dipole. The random motion of the defect is assumed to be governed by a fractal time stochastic process where the mean duration between defect movements is infinite. When there are many more defects than dipoles, the Williams-Watts decaying fractional exponential relaxation law is derived. The argument of the exponential is related to the number of distinct sites visited by the random walk of the defect. For the same reaction dynamics but with more traps than walkers, an algebraically decaying relaxation is found.     

Charge trapping at Pt/high-k dielectric (Ta2O5) interface

A detailed analysis of the effects of constant low current injection was done, both in accumulation (J=0.001-0.2 mA cm⁻²) and in inversion (J=0.001-0.04 mA/cm²). The samples under investigation were metal-insulator-silicon structures containing high-k dielectric Ta₂O₅ radio frequency sputtered on p-type Si wafers, with Pt metal gate electrodes. The obtained results were compared with the ones obtained for Al gate samples. This experiment confirms the occurrence of charge trapping in the case of high-work-function Pt as metal. The effect has been attributed to emitting of electrons into the Pt conduction band during which creation of empty traps in the dielectric occurs, which then attract electrons injected in the dielectric. In order to examine the reversibility of the process, successive short runs as well as long runs (up to 10000 s) were performed.     

Improved model of streamer propagation in liquid dielectrics

Breakdown and pre‐breakdown cause extensive damage in dielectric oils used in power systems subjected to high voltages. Consequently, several research works are devoted to these phenomena. Related investigations are made very difficult by the numerous influencing parameters and the large number of characteristics of these phenomena. The main goal of the present work was to establish a new electrical model that describes the propagation of streamers in liquid dielectrics for a point‐plane configuration subjected to high‐voltage fields. The novelty consists in the presence of an inductance in the equivalent electrical circuit, which represents the dielectric during the partial discharges characterized by fast variations of current. Criticisms were first made concerning previous electrical models that show some disadvantages. The developed model consists of a series RLC circuit whose element values change during propagation. In particular, the value of the resistance decreases in anticipation of breakdown. The simulation of the developed model gave satisfactory results, similar to experimental ones. For instance, the influence of electrical and geometrical parameters on the current pulses amplitude as well as on the streamers propagation velocity and the quantity of charge and the energy injected were studied. Good agreement was also obtained between the obtained results and experimental ones, which reinforces the validity of the model.