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41.
The Li oxides species formed on Li over-deposited V2O5 thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V2O5 system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li2O and Li2O2 compounds on the surface. The formation of Li2O2 causes to arise an emission line at about 11.3 eV in the valence band spectra. 相似文献
42.
The authors give the necessary and sufficient conditions for a generalized circle in a Weyl hypersurface to be generalized circle in the enveloping Weyl space. They then obtain the neccessary and sufficient conditions under which a generalized concircular transformation of one Weyl space onto another induces a generalized transformation oil its subspaces. Finally, it is shown that any totally geodesic or totally umbilical hypersurface of a generalized concircularly flat Weyl space is also generalized concircularly flat. 相似文献
43.
44.
Elena Castellani 《International Journal of Theoretical Physics》2004,43(6):1503-1514
We examine the relevance of Dirac's view on the use of transformation theory and invariants in modern physics to current reflections on the meaning of physical symmetries, especially gauge symmetries. 相似文献
45.
The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional
solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time
play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t
1/2, which is consistent with the theoretical model.
Supported by the National Science Foundation of China (Grant No. 50395102) 相似文献
46.
A finite element solution of the Navier-Stokes equations for steady flow under the magnetic effect through a double-branched two-dimensional section of a three-dimensional model of the canine aorta is discussed. The numerical scheme involves transforming the physical co-ordinates to a curvilinear boundary-fitted co-ordinate system. The shear stress at the wall is calculated for a Reynolds number of 1000 with the branch-to-main aortic flow rate ratio as a parameter. The results are compared with earlier works involving experimental data and found to be in reasonable qualitative agreement. The steady flow, shear stress and branch flow under the effect of a magnetic field have been discussed in detail. 相似文献
47.
Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti3SiC2 MAX-phase formulated ablation target on oxidized Si(1 0 0) and MgO(1 0 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900 K, and the pressure in the deposition chamber ranged from vacuum (10−5 Pa) to 0.05 Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20 eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti3SiC2 related reflections were found. Only a very weak TiC(2 0 0) reflection was seen, indicating the presence of a small amount of crystalline TiC. 相似文献
48.
A new method of using time-averaged digital speckle pattern interferometry for the quantitative measurement of vibration amplitude was developed. Signal processing techniques especially the Hilbert transformation for quantitative evaluation of the Bessel fringes obtained in time-averaged digital speckle pattern interferometry were explored. The quadrature signal after Hilbert transformation is equivalent to a 90° phase-shifted interferogram for a monotonically increasing or decreasing phase function. An algorithm was developed for Bessel fringe contrast enhancement and phase extraction. The techniques were tested numerically and experimentally. Sub-fringe quantification of the time-averaged vibration fringes is realised with the proposed method. Compared with the commonly used phase shift method which requires a minimum of two images for image processing, this method requires only one fringe pattern for data extraction. 相似文献
49.
In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength. 相似文献
50.
以陆地棉(冀棉20)下胚轴为外植体,在含KT0.3mg/L和2,4-D0.08mg/L的MS培养基上,诱导产生了胚性愈伤组织,继代培养不需要添加激素,胚性愈伤组织即分化为胚状体,并萌发出小芽,胚状体萌发过程与合子胚相似,但出现了一些畸形胚,解剖学方法观察发现,这些畸形胚的维管束系统不明显或形态异常,以农杆菌介导法对冀棉20胚状体及胚性愈伤组织进行了雪花莲凝集素(GNA)基因的遗传转化条件探索,并以GUS基域瞬间进行检测加以证实,得出农杆菌的浓度为O.D600=0.8时,浸染时间为5min,共培养时间为3d,筛选培养基中卡那霉素浓度为75mg/L,对冀棉20胚状体及胚性愈伤组织转化是较为适合的。 相似文献