Nature of charge separation and recombination processes within an organic dyad having short spacer

With the help of electrochemical, steady state and time resolved fluorescence (fluorescence lifetimes by using time correlated single photon counting technique) and nanosecond laser flash photolysis methods, the nature of charge separation along with the energy wasting charge recombination processes within a short-chained organic dyad 1-(4-Bromo-phenyl)-3-(2-methoxy-naphthalen-1-yl)-propenone (MNBA) has been revealed. In MNBA, the donor 2-methoxynaphthalene (2MNT) is connected with the acceptor p-bromoacetophenone (PBA) by an unsaturated olefinic bond. Though in the ground state elongated type structure (E-form) is observable from NMR spectra but on photoexcitation, another conformers possibly of the nature of folded type isomeric species (termed as Z-isomer) were also apparent from time resolved fluorescence measurements. However, preponderance of elongated form in the excited singlet state has been established from this time resolved measurements. NMR study on photoirradiated sample and theoretical predictions from computations using CIS method with Lanl2DZ basis set also indicate in favor of the propositions made on the formations of the two possible conformers and the stability of elongated isomeric species in the electronic excited state from the experimental results. The energy wasting charge recombination rate, k_CR, determined from the transient absorption measurements by nanosecond laser flash photolysis (LFP) technique was found to be (k_CR, ∼1.9×10⁵ s⁻¹) significantly lower than the charge-separation rate, k_cs∼9.4×10⁷ s⁻¹, measured from the time resolved fluorescence. This observation demonstrates that MNBA may serve as an efficient candidate to construct artificial light energy conversion devices or components of molecular photovoltaic cells.     

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

The surface composition of as-grown and annealed ZnO nanorods arrays (ZNAs) grown by a two-step chemical bath deposition method has been investigated by X-ray photoelectron spectroscopy (XPS). XPS confirms the presence of OH bonds and specific chemisorbed oxygen on the surface of ZNAs, as well as H bonds on surfaces which has been first time observed in the XPS spectra. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Annealing can largely remove the OH and H bonds and transform the composition of the other chemisorbed oxygen at the surface to more closely resemble that of high temperature grown ZNAs, all of which suppresses surface recombination according to time-resolved photoluminescence measurements.     

On the entropy method and exponential convergence to equilibrium for a recombination–drift–diffusion system with self-consistent potential

We consider a Shockley–Read–Hall recombination–drift–diffusion model coupled to Poisson’s equation and subject to boundary conditions, which imply conservation of the total charge. As main result, we derive an explicit functional inequality between relative entropy and entropy production rate, which implies exponential convergence to equilibrium with explicit constant and rate. We report that the key entropy–entropy production inequality ought rather not to be formulated on the states space of the parabolic–elliptic system, but on the reduced states space of the associated nonlocal drift–diffusion problem, where the Poisson equation is replaced by the corresponding Green function.     

Luminescence in BaSO4:Eu

Abstract

Photoluminescence and thermoluminescence in BaSO₄:Eu is reported. In earlier works, divalent Eu has been studied in BaSO₄. In the present work Eu was incorporated as in predominantly Eu³⁺ or Eu²⁺ form. It is shown that RE³⁺ ? RE²⁺ conversion or RE²⁺ ? RE⁺ conversion is not an integral part of gamma induced TL. Eu³⁺ ? Eu²⁺ conversion, on the other hand, may be important in UV induced TL. Low UV efficiency of this material is attributed to poor Eu³⁺ ? Eu²⁺ conversion. This is in quite contrast to the analogus material CaSO₄: Eu.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Total dielectronic recombination rate coefficient for Co-like tungsten

Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state 3s²3p⁶3d⁹(J=5/2) of Co-like tungsten is performed employing the relativistic distorted-wave approximation with configuration-interaction. The DR contributions mainly come from complex series 3d⁸4ln′l′. The complex series 3p⁵3d¹⁰n′l′, 3p⁵3d⁹4ln′l′ and 3d⁸5ln′l′ also contribute significantly to the total DR rates at relatively high electron temperatures. The l′ and n′ dependences of the partial rate coefficient are investigated. The inclusion of decays into autoionizing levels followed by radiative cascades (DAC) enlarges the total DR rate coefficients by a factor of about 10%. The level-by-level extrapolation method is developed to include DAC effects. The total DR rate coefficients are fitted to an empirical formula. It is shown that at temperatures above 2.5 keV the Burgess-Merts (BM) semiempirical formula can provide DR results with an accuracy of about 15%, whereas at electron temperatures below 100 eV it underestimates the DR rate coefficients by up to a few orders of magnitude and its temperature dependence is completely inadequate. The comparison of the results for Ni-like and Co-like tungsten shows that these two sets of DR rate coefficients are very close in magnitude at relatively high electron temperatures.     

Output characteristics of a cataphoresis He–Sr recombination laser

A cataphoresis discharge tube of 7 mm inner diameter and 38 cm active length was designed and made for the He–Sr⁺ laser. The cataphoretic input of uniform distribution of strontium vapor concentrations along the active region was realized by the cataphoresis effect and the slow flowing (0.5 nl/h) of helium buffer gas. The strontium ionic recombination laser at 430.5 nm and the R–M transition laser at 1.03 μm were obtained with the modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The laser components are concentrated on the 430.5 nm wavelength. Dependences of working parameters such as the pulse frequency, the supply voltage, and the helium pressure on laser output characteristics were measured and discussed. The maximum laser output power of 819 mW and specific power of 56 mW/cm³ were obtained, respectively.     

Molecular weight dependence of carrier mobility and recombination rate in neat P3HT films

The microstructure dependence of carrier mobility and recombination rates of neat films of poly 3‐hexylthyophene (P3HT) were determined for a range of materials of weight‐average molecular weights, M_w, ranging from 14 to 331 kDa. This variation has previously been shown to modify the polymer microstructure, with low molecular weights forming a one‐phase, paraffinic‐like structure comprised of chain‐extended crystallites, and higher molecular weights forming a semicrystalline structure with crystalline domains being embedded in an amorphous matrix. Using Charge Extraction by Linearly Increasing Voltage (CELIV), we show here that the carrier mobility in P3HT devices peaks for materials of M_w = 48 kDa, and that the recombination rate decreases monotonically with increasing molecular weight. This trend is likely due to the development of a semicrystalline, two‐phase structure with increasing M_w, which allows for the spatial separation of holes and electrons into the amorphous and crystalline regions, respectively. This separation leads to decreased recombination. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 31–35     

双回碰机制下双电子谐波发射的特点

本文数值研究了阿秒分辨下双电子He原子发射高次谐波的特点.数值计算结果表明,双电子谐波光谱的截止能量与单电子相比有较大延伸,并且我们发现了一些新的截止能量.随后分析显示,这些新的截止能量是由双电子的双回碰机制所导致的,并且电子相关效应在里面起到了很重要的作用.