GaN激子跃迁的时间分辨光谱学研究

用时间分辨光谱学方法研究低压有机金属化学汽相沉积生长的ＧａＮ中自由，束缚激子（ＢＸ）的跃迁，讨论了这些跃迁的光致发光谱，复合寿命及其与温度的关系，给出了中性施主束缚激子和自由激子（ＦＸ）的辐射复合寿命分别为０．１２ｎｓ和０．４ｎｓ。     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

Low-temperature photoluminescence in germanium irradiated by fast neutrons

This study was carried out to investigate low-temperature (T=4.2 K) photoluminescence caused by interdopant recombination transitions in n-germanium irradiated by fast (epicadmium) reactor neutrons and subjected to “complete” annealing (+450°C, 24 h). It is shown that lines of interdopant radiative recombination observed in initial and in irradiated and annealed specimens are caused by both initial impurities and (mainly) dopants (As and Ga) implanted by transmutation as well as by defect sets stable at long-time high-temperature annealing that do not contain fine dopants. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 479–482, July–August, 1997.     

载流子迁移率对单层有机发光二极管复合效率的影响

建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型.通过求解非线性Painleve方程得出了电场强度随坐标变化的解析函数关系式以及电流密度随电压变化关系,给出了电流密度以及器件的复合效率在不同的载流子迁移率情况下随电压变化关系图像.结果表明,复合效率受载流子迁移率影响较大,在器件中多数载流子应具有较低的迁移率,而少数载流子应具有较高的迁移率,这样有利于载流子的注入和传输,从而可提高发光效率.并且得出当空穴迁移率大于电子迁移率时,复合区域偏向阴极,反之亦 关键词： 单层有机发光二极管 复合效率 迁移率     

Sonoluminescence intensity and ultrasonic cavitation temperature in organic solvents: Effects of generated radicals

Ultrasonic cavitation in organic solvents remains poorly understood in contrast with aqueous systems, largely because of complexities related to solvent decomposition. In this study, we sonicated different types of organic solvents (i.e. linear alkanes, aliphatic alcohols, aromatic alcohols, and acetate esters) under argon saturation. The average temperature of the cavitation bubbles was estimated using the methyl radical recombination method. We also discuss the effects of the physical properties of the solvents, such as vapor pressure and viscosity, on the cavitation temperature. The average cavitation bubble temperature and sonoluminescence intensity were higher in organic solvents with lower vapor pressure; for aromatic alcohols, these values were particularly high. It was found that the specific high sonoluminescence intensities and average cavitation temperatures exhibited in aromatic alcohols are caused by the highly resonance-stable generated radicals. The results obtained in this study are very useful for acceleration of sonochemical reaction in organic solvents, which are indispensable for organic synthesis and material synthesis.     

克服“高超声障''的途径”

在高超声速飞行条件下, 流入冲压发动机燃烧室并降至低速的空气温度, 随着飞行马赫数增 加升得愈来愈高. 燃料与高温空气混合燃烧释放的化学能将部分转化为解离能. 这些解离能 在长度受限的尾喷管中难以充分复合形成推力, 使冲压发动机性能随飞行马赫数增大而急剧 下降. 导致冲压发动机不适应高超声速飞行器的推进要求. 将此定名为``高超声障'. 半个 世纪以来, 广泛采用``超声速燃烧'降低流入燃烧室的空气温度来克服这种障碍. 虽已取得 不少进展, 然而关键性难点仍需继续攻克. 为了多途径促进吸气推进高超声速飞行的实现, 提出克服``高超声障'的另一种思路：保持现有冲压发动机吸气与燃烧方式, 通过催化促进 燃气解离组分在尾喷管膨胀过程中的复合, 增大冲压发动机的推力, 达到满足高超声速飞行 器的推进要求.     

Temperature dependence of photoluminescence in amorphous Si1-xCx:H films

We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si_1-xC_x:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.     

类He的Y离子双电子复合计算

采用准相对论的多组态Hartree-Fock(HFR)方法计算了类Li的Y离子(Z=39)的能级和振子强度,并且通过采用扭曲波方法计算自由电子的波函数,我们得到了由类He的基态到类Li的双激发态的自电离几率和双电子复合系数。在计算中,相对论质量—速度和Darwin修正都包含在哈密顿中。为了便于等离子体细致能级占据数密度的动力学计算,我们用一个解析表达式来表示作为自由电子温度函数的双电子复合速率系数,这个表达式精确地描写了从类He的基态到类Li的单激发态的双电子复合。