Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.     

Exciplex Formation and Excited State Deactivation of Difluoroborondipyrromethene (Bodipy) Dyads

Two series of geometrically‐related dyads are discussed based on the difluoroborondipyrromethene (Bodipy) unit, and incorporating covalently attached hydroquinone/quinone groups. These units are anchored directly, or via a phenylene spacer, to the Bodipy core at the meso position in one series ( BD‐MHQ , BD‐MQ , BD‐MPHQ , BD‐MPQ ), but for the second series the attachment site is the 2‐position ( BD‐SHQ , BD‐SQ , BD‐SPHQ , BD‐SPQ ). The compounds show various levels of fluorescence depending on the oxidation state of the appended group and the substitution pattern. In non‐polar solvents such as toluene, diethyl ether and dichlorobenzene, the S₁ state deactivation of the Bodipy unit in BD‐SPQ and BD‐MPQ is dominated by ^{1, 3}exciplex formation, which has not been reported for Bodipy derivatives so far. In the latter molecule, the decay of the exciplex is divided between population of the Bodipy triplet state (13 %–21 %) and ground state reformation. This partitioning is not seen for the side‐on substituted derivative, BD‐SPQ , and only ground state reformation is observed following decay of the exciplex. This difference in behavior is explained by the radical‐pair inter‐system‐crossing mechanism, which more effectively operates in BD‐MPQ because of the orthogonality of the donor‐acceptor units. In the more polar solvent CH₃CN all the quinone derivatives show fast formation of the charge‐separated state (k_CS) followed by slower charge recombination (k_CR). The ratio k_CS/k_CR≤80.     

鲨鱼肝铁蛋白亚基解离与组装机理的研究

小批量制备质谱纯鲨鱼肝铁蛋白(Liver Ferritin of Sphyrna zygaena,SZLF)。在弱酸介质(pH1.0)中,天然电泳结果显示,SZLF蛋白质亚基20 min后开始解离。选用透射电子显微镜跟踪SZLF亚基解离与重组装全过程和蛋白壳与铁核尺寸变化,发现SZLF在亚基酸解离过程中,随着pH值的降低,铁核和蛋白壳的尺寸呈现相同的变化趋势,这种变化趋势可能与铁核内层铁的释放和蛋白壳的解离与去折叠有关。SZLF蛋白壳的重组装过程则是一个快速过程,并且是由松散熔球态向紧密态转变的过程。SZLF由单类型亚基组成,而马脾铁蛋白(Horse Spleen Ferritin,HSF)由H和L两种亚基类型组成。在基质pH3.0条件和激光辅助下,混合HSF和SZLF仍然可释放各自的亚基且形成准亚基离子,供基质辅助激光解析电离飞行时间质谱分析,说明此时SZLF的亚基间相互作用强度减弱但并没有去折叠。TEM技术在铁蛋白解离和重组装过程中的应用,为进一步研究铁蛋白纳米包装的过程和机理提供新颖的、可行的和更加直观的研究手段。     

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Silicon-rich hydrogenated amorphous silicon nitride (a-SiN_x:H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH₃/SiH₄ gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission intensity high enough to be perceived by naked eye at room temperature. The behaviors of the PL peak energy and the PL band broadness with respect to the optical constants were discussed in the frame of electron-phonon coupling and band tail recombination models. A semiquantitative analysis supported the band tail recombination model, where the recombination was found to be favored when the carriers thermalize to an energy level at which the band tail density of states (DOS) reduces to some fraction of the relevant band edge DOS. For the PL efficiency comparison of the samples with different nitrogen contents, the PL intensity was corrected for the absorbed intensity fraction of the incident PL excitation source. The resulted correlation between the PL efficiency and the subgap absorption tail width further supported the band tail recombination model.     

The low frequency behaviour in high frequency capacitance–voltage characteristics due to contribution of band-to-band tunnelling and generation–recombination in Hg0.75Cd0.25Te MIS capacitors

Hg_1−xCd_xTe Metal–Insulator–Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation–recombination (gr) of carriers to inversion layer capacitance. A good fit to the data has been obtained by including the btb contributions rather than gr contributions.     

A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multi‐crystalline silicon (mc‐Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Σ3 and Σ9 GBs in mc‐Si. The density of interface states close to midgap is found comparable for both as‐grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc‐Si based solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Auger process in CdS/ZnS core-shell quantum dots

Auger processes are investigated for CdS/ZnS core-shell quantum dots. Auger recombination (AR) lifetime and electron relaxation inside the core are computed. Using the effective-mass theory and by solving a three-dimension Schrödinger equation we predict the dependence of Auger relaxation on size of core-shell nanocrystals. We considered in this work different AR processes: the excited electron (EE), excited hole (EH), multiexciton AR type. Likewise, Auger multiexciton recombination rates are predicted for biexciton. Our results show that biexciton AR type is more efficient than the other AR process (excited electron (EE) and excited hole (EH)). We also found that electron Auger relaxation P→S is very efficient in core-shell nanostructures.     

Determination of trapping–detrapping events,recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Analysis of the out-of-phase modulated photocurrent (MPC) signal, the so-called Y signal, is proposed for determining the trapping–detrapping events, recombination processes and gap-state parameters in amorphous silicon. This is demonstrated by analysing experimental Y spectra obtained on this material from different laboratories including our own. Model simulations are also employed in which the amphoteric nature of the dangling bonds and their distribution according to the defect-pool model are taken into account. From the reconstruction of the Y signal, phase shift and MPC amplitude spectra, several contributions resolved from the frequency dependence of the experimental Y spectra are identified. Two electron trapping–detrapping processes are resolved. These are attributed to hydrogen-related positive defects and to transitions involving the D^+/0 level of the normal dangling bonds from the defect-pool distribution. At lower frequencies a residual contribution is resolved that is attributed to a term related to recombination through the D^+/0 and D^0/? levels. Between 300 and 150?K the above recombination contribution is essentially from the D^0/? and dominates the Y signal at lower frequencies. In this region a characteristic phase lead appears, which is attributed to the existence of safe hole traps in the valence band tail. Around 150?K, trapping–detrapping events in the conduction band tail dominate.     

Combination of Cobalt and Iron Polypyridine Complexes for Improving the Charge Separation and Collection in Ru(terpyridine)2‐Sensitised Solar Cells

Mixtures of polypyridine Fe^II and Co^II complexes are used as electron mediators in Ru–thienyltpy‐sensitised solar cells (tpy=terpyridine). The use of the metalorganic redox couples allows for improved charge‐collection efficiency with respect to the classical iodide/iodine couple which, when associated to Ru–tpy₂ dyes, usually produces poor performance. The improved charge collection is explained by a combination of effective dye regeneration and decreased recombination with the oxidised electrolyte on the basis of data obtained by transient spectroscopy and photoelectrochemical measurements. The efficiency of the regeneration cascade is also critically dependent upon the ability of the Co^II complex to intercept Fe^III centres, as clearly indicated by chronocoulometry experiments.     

GaN激子跃迁的时间分辨光谱学研究

用时间分辨光谱学方法研究低压有机金属化学汽相沉积生长的ＧａＮ中自由，束缚激子（ＢＸ）的跃迁，讨论了这些跃迁的光致发光谱，复合寿命及其与温度的关系，给出了中性施主束缚激子和自由激子（ＦＸ）的辐射复合寿命分别为０．１２ｎｓ和０．４ｎｓ。