一种苯乙烯基喹啉衍生物的稳态和瞬态光电性质

苯乙烯和喹啉是有机荧光材料的常用官能基团,已经在有机发光二极管(OLED)中得到了应用.本文用一种苯乙烯基喹啉衍生物2,2’-(2,5-二甲氧基-1,4-苯二乙烯基)双-8-乙酰氧基喹啉(MPV-AQ)同时作为发光材料和电子传输材料,研究了它在OLED器件中的稳态和瞬态光电性质.研究发现,在基于N,N’-二(萘-1-基)-N,N’-二苯基-联苯胺(NPB)/MPV-AQ的双层OLED中,电子以Fowler-Nordheim(FN)隧穿的方式从阴极注入到MPV-AQ层,这与MPV-AQ单电子器件中电子以Richardson-Schottky(RS)热电子发射的注入方式完全不同.这种电子注入方式的差别,主要是由于MPV-AQ的电子迁移率较低,大量空穴在NPB/MPV-AQ界面处形成电荷积累,使得MPV-AQ层的能带发生了弯曲,造成阴极一侧的电子隧穿距离减小,从而导致了FN隧穿的发生.通过拟合稳态电流-电压特性得到了电子注入势垒为0.23 e V,通过瞬态电致发光的延迟时间计算得到MPV-AQ的电子迁移率在10^-6 cm~2/(V·s)数量级,通过瞬态电致发光的衰减获得...     

Role of a‐Si:H bulk in surface passivation of c‐Si wafers

The low thermal stability of hydrogenated amorphous silicon (a‐Si:H) thin films limits their widespread use for surface passivation of c‐Si wafers on the rear side of solar cells. We show that the thermal stability of a‐Si:H surface passivation is increased significantly by a hydrogen rich a‐Si:H bulk, which acts as a hydrogen reservoir for the a‐Si:H/c‐Si interface. Based on this mechanism, an excellent lifetime of 5.1 ms (at injection level of 10¹⁵ cm^–3) is achieved after annealing at 450 °C for 10 min. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

双回碰机制下双电子谐波发射的特点

本文数值研究了阿秒分辨下双电子He原子发射高次谐波的特点.数值计算结果表明,双电子谐波光谱的截止能量与单电子相比有较大延伸,并且我们发现了一些新的截止能量.随后分析显示,这些新的截止能量是由双电子的双回碰机制所导致的,并且电子相关效应在里面起到了很重要的作用.     

有机场致发光中能带模型与分子理论的讨论

在有机场致发光中,能带模型及分子理论从20世纪就存在尖锐的矛盾。在分层优化方案中,经SiO₂加速后的电子能量可以到达10eV,这足以激发发光材料发光,将分层优化方案应用到有机场致发光材料中。发现了固态阴极射线发光(SSCL),经过对它的交叉证明、普适性的验证,肯定了固态阴极射线的发光确实是在发光二极管,无机及有机场致发光之外的一种完全新型的电场诱导的发光。SSCL的特征是在它的光谱中出现短波发光峰,实验证明长波发光峰的减弱是由于电场离化效应。研究了这种效应出现的电压阈值并和SSCL的短波峰出现的电压相比,发现短波峰的出现是在激子的电场离化之后,从而找出了电子处于局域态与扩展态的分水岭,解释了在有机场致发光中能带模型和分子理论并不矛盾,只是适用的条件不同。激子的离化是随电场强度而渐进的变化,因此会有一个两种过程并存的范围。     

胶子重组函数的性质

通过协变和非协变的方法研究了领头对数近似(LLA)下扭度为4的QCD演化方程中的胶子重组函数的性质.指出了GLRMQ方程中的胶子重组函数并不适用.讨论了避免红外发散的方法,这种方法可以用于高扭度下演化核和系数函数的推导.     

采用选择激发研究光系统Ⅱ反应中心β-Car的物理特性

光系统Ⅱ反应中心包含有2个去镁叶绿素分子(Pheo),2个β胡萝卜素分子(β-Car)和6个叶绿素a分子(Chla).对反应中心的时间分辨荧光光谱表明,两个β-Car具有不同的吸收光谱,吸收峰分别为489 nm(Car489)和507 nm(Car507),Car489靠近吸收峰为667 nm和675 nm的叶绿素a(Chl a),它的主要功能是保护反应中心免受单态氧的破坏,而不能将激发能传递给光化学反应活性的色素分子P680;Car507靠近吸收峰为669 nm的Chl a分子;能够将激发能传递给P680,进行电荷分离.采用全局优化拟合的方法对荧光光谱进行处理,Car489在61 ps时间内将能量传递给Chl a672, 随后传给Chl a677,处于激发态的Chl a677在3 ns衰减到基态;Car507在274 ps时间内将能量传递给P680,P680＋Pheo-的电荷重组发生在3.8 ns和16 ns.     

The low frequency behaviour in high frequency capacitance–voltage characteristics due to contribution of band-to-band tunnelling and generation–recombination in Hg0.75Cd0.25Te MIS capacitors

Hg_1−xCd_xTe Metal–Insulator–Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation–recombination (gr) of carriers to inversion layer capacitance. A good fit to the data has been obtained by including the btb contributions rather than gr contributions.     

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Silicon-rich hydrogenated amorphous silicon nitride (a-SiN_x:H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH₃/SiH₄ gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission intensity high enough to be perceived by naked eye at room temperature. The behaviors of the PL peak energy and the PL band broadness with respect to the optical constants were discussed in the frame of electron-phonon coupling and band tail recombination models. A semiquantitative analysis supported the band tail recombination model, where the recombination was found to be favored when the carriers thermalize to an energy level at which the band tail density of states (DOS) reduces to some fraction of the relevant band edge DOS. For the PL efficiency comparison of the samples with different nitrogen contents, the PL intensity was corrected for the absorbed intensity fraction of the incident PL excitation source. The resulted correlation between the PL efficiency and the subgap absorption tail width further supported the band tail recombination model.     

Ionic conductivity of epitactic MBE-grown BaF2 films

We studied parallel conductivities of pure BaF₂ films with thicknesses ranging from 35 to 300 nm, epitaxially grown on Al₂O₃(0 1 2) substrates by molecular beam epitaxy technique. The overall conductivities of the films are found to increase with decreasing thickness. The detailed investigation of the overall conductance as a function of the thickness permits the deconvolution of bulk and boundary effects, the latter being attributed to distinct space charge effects in the interface between BaF₂ film and Al₂O₃ substrate. The (extrinsic) Debye length (λ) is estimated to be about 8 nm at T=593 K, which corresponds to an impurity content of 10¹⁸/cm³ (singly ionized dopant assumed). This is consistent with the fact that we observed a constant boundary contribution for all investigated films (film thickness >4λ). It is also consistent with the Debye length observed in a previous report on CaF₂/BaF₂ heterolayers fabricated by the same technique, in which the low temperature enhancement was also attributed to space charges in BaF₂ [Nature 408 (2000) 946]. Only at low temperatures (below 370 °C), the conductance seems to be influenced by strain effect.     

电子与离子碰撞过程中辐射复合截面的相对论理论研究

在相对论理论框架下,研究了自由电子与离子碰撞的辐射复合过程.在分析影响单电子体系(类H+离子及碱金属离子)辐射复合截面主要因素的基础上,总结出了辐射复合截面在不同情况下的变化规律.