Field emission from quantum size GaN structures

Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×10¹⁷ or 3×10¹⁸ cm⁻³) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I–V curves.     

爆轰波直接合成致密相氮化硼研究

采用石墨相氮化硼与高能炸药混合后直接爆轰的方法,合成致密相氮化硼。实验表明,在爆轰过程的高温高压作用下,低密度的石墨相氮化硼(gBN)可以转化为致密相氮化硼。这种方法合成的致密相微粉中含有纤锌矿型氮化硼(wBN)和立方氮化硼(cBN)两种物相,合成的转化率为16％,每千克炸药可生产28克(140克拉)以上。     

一类三次微分系统的极限环

研究一类三次微分系统极限环的个数。给出了极限环的不存在性和唯一性的判别法．后者是利用一条无功二次曲线，它的方程是所论系统的发散量等于零。     

Manifestation of hexagonal-like structure in the second-order nonlinear effects in the GaN nanocrystallites

Contribution of the hexagonal-like structural components to the photoinduced second harmonic generation (SHG) in GaN large-sized nanocrystallites (with sizes about the 10–30 nm) incorporated into the polyvinylalcohol photopolymer matrices is revealed. The SHG measurements were done using pulsed Nd:YAG laser beam (λ=1.06 μm; pulse duration τ=15–50 ps, laser power about 30 MW) as a fundamental ones and a picosecond nitrogen pulsed laser (P=10 MW; λ=0.377 μm; pulse time duration τ=10–25 ps) as a photoinducing one. We have found that with increasing pumping power density the SHG output signal increases and achieves its maximum value for the power density about 2.6 GW/cm² per pulse. The maximal output photoinduced SHG signal was achieved for parallel directions of the pumping and fundamental beam polarizations. The maximal values of the second-order nonlinear susceptibilities were equal to about 1.09 pm/V. We have observed an increase of the output SHG below 30 K and for pump-probe delaying time about 18 ps. Substantial contribution to the SHG of wurtzite-like (hexagonal) structural fragments is shown.     

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/Al_xGa_1−xN/GaN heterostructures with different Al mole fraction in the Al_xGa_1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×10³ cm² /Vs⁻¹ for GaN capping layer thickness grater than 100 Å with an Al_0.32Ga_0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×10¹² cm⁻² for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.     

散乱数据的数值微分及其误差估计

1 背景及问题的提出 导数是数学分析中的一个基本的慨念。对于数学工作者来讲,计算导数不是一项特别困难的工作。但是,对于研究实际问题的科学工作者来讲,这项工作就不是一件简单的工作了,首先,求导数的问题是一个典型的Hadamard意义下的不适定问题([5],[12]等)     

中心对称三次系统的一类双纽线有界周期环域的poincare分支

证明中心对称三次系统的一类双纽线有界周期环域的 poincare分支至少可以出现作对称 (3,3)分布的六个极限环 .     

Polarization-Independent Ultrasonic Modulation of Light in Gyrotropic Cubic Bismuth Germanate Crystals

An intermediate regime of light diffraction by ultrasound propagating along the [001] and [110] axes of a gyrotropic cubic bismuth germanate crystal is investigated. The possibility of polarization-independent light modulation in the intermediate regime of diffraction close to the Bragg regime is shown. The dependences of the diffraction efficiency on the incident light polarization azimuth at different ultrasonic wave intensities are given.     

Numerical Simulation of SRS of Cylindrical Wave Beams

A method for numerical simulation of stimulated Raman scattering of cylindrical wave beams in a nonlinear medium has been developed. The features of the spatial structure formation of interacting wave fields in the regime of conservation of azimuthal angular distributions of amplitudes have been investigated. The radial intensity profiles of diffracting light beams in the near-field zone and their angular spectra in the far-field zone corresponding to different stages of energy exchange in the process of amplification from the noise in the barium nitrate crystal have been calculated. It has been shown that in the field of Bessel beams waveguide structures of the soliton type with a peak intensity of the self-channeling Stokes component significantly exceeding the initial pumping intensity are formed. A comparison of the conversion efficiencies under pumping by Gaussian and Bessel light beams has been made.     

Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance–voltage (C–V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS³) simulation technique. PL and C–V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10¹² cm⁻². A further improvement took place by depositing a Si₃N₄ layer on GaN ICL/GaAs structure.