氧气氛中p-GaN/Ni/Au电极在相同温度不同合金时间下的欧姆接触形成机制和扩散行为

用卢瑟福背散射/沟道技术研究了p-GaN上的Ni/Au电极在氧气氛下相同合金温度(500℃)不同合金时间后的微结构演化,以揭示欧姆接触的形成机制.利用背散射随机谱和RUMP模拟程序研究了电极金属之间的互扩散,用沟道谱探测了电极金属中的氧分布.结合不同合金时间下比接触电阻ρ_c的变化,发现随着合金时间的延长比接触电阻持续降低,在合金时间60 s后降低的速度减慢, Au扩散到GaN的表面,在p-GaN上形成外延结构,O向电极内部扩散反应生成NiO对降低ρ_{关键词： GaN 卢瑟福背散射/沟道 欧姆接触}     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

不同构型(In,Al)GaN合金发光机理的第一性原理研究

基于第一性原理的密度泛函理论,研究了纤锌矿（In,Al）GaN合金的4种构型（均匀、短链、小团簇、团簇-链共存模型）的电子结构和发光微观机理。结果表明,在InGaN合金中,短In-N-链和小In-N团簇都局域电子在价带顶（VBM）态。当小团簇与短链共存时,前者局域电子的能力明显强于后者,是辐射复合发光中心。然而,在AlGaN合金中,电子在VBM态的局域受短Al-N链和小Al-N团簇的影响并不显著。合金微观结构的不同会引起电子局域的改变,从而影响材料的发光性能,并对带隙和弯曲系数有重要影响。     

透射式负电子亲和势GaN光电阴极的光谱响应研究

利用金属有机化合物化学气相淀积(MOCVD)生长了发射层厚度为150 nm、掺杂浓度为1.6×10¹⁷ cm^-3的透射式GaN光电阴极,并在超高真空激活系统中对其进行了激活.通过多信息量测试系统进行了测试,发现透射式负电子亲和势(NEA)GaN光电阴极的量子效率曲线成一个"门"的形状,在255—355 nm波段有较大且平坦的响应,在290 nm处取得最大值为13%,由于AlN缓冲层对短波段光的吸收系数较大,在小于255 nm的波段量子效率出现了下降,当波长大于3 关键词： 透射式 NEA GaN光电阴极 量子效率     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

Structure, spin reorientation and M(o)ssbauer effect studies of Tb0.3Dy0.7(Fe1-xAlx)1.95 alloys

The effect of Al substitution for Fe on crystal structure, magnetostriction and spontaneous magnetostriction, anisotropy and spin reorientation of a series of polycrystalline Tb0.3Dy0.7(Fe1-xAlx)1.95 alloys (x = 0, 0.05, 0.1, 0.15, 0.20, 0.25, 0.30, 0.35) at room temperature and 77 K was investigated systematically. It was found that the primary phase of Tb0.3Dy0.7(Fe1-xAlx)1.95 is the MgCu2-type cubic Laves phase structure when x < 0.4 and the lattice constant a of Tb0.3Dy0.7(Fe1-xAlx)1.95 increases approximately and monotonically with the increase of x. The substitution of Al leads to the fact that the magnetostriction ( inceases slightly in a low magnetic field (H ≤ 40 kA/m), but decreases sharply and is easily close to saturation in a high applied field as x increases, showing that a small amount of Al substitution is beneficial to a decrease in the magnetocrystalline anisotropy. It was also found that the spontaneous magnetostriction (ζ)111 decreases greatly with x increasing. The analysis of the M(o)ssbauer spectra indicated that the easy magnetization direction in the {110} plane deviates slightly from the main axis of symmetry with the changes of composition and temperature, namely spin reorientation. A small amount of non-magnetic phase exists for x = 0.15 in Tb0.3Dy0.7(Fe1-xAlx)1.95 alloys and the alloys become paramagnetic for x > 0.15 at room temperture, but at 77 K the alloys still remain magnetic phase even for x = 0.2. At room temperature and 77 K, the hyperfine field decreases and the isomer shifts increase with Al concentration increasing.     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压