溶剂热法制备立方状ITO粉体及其电性能

以乙二醇、乙醇为溶剂通过溶剂热法制备出立方状ITO纳米粉体,研究了反应时间、NaOH浓度对ITO纳米粉体形貌的影响,并讨论了溶剂体积比、NaOH浓度对ITO粉体导电性的影响及机理。结果表明：采用乙二醇与乙醇做溶剂,V_EG：V_EtOH=4：1时,制备出分散性良好的立方状ITO纳米粉体,平均粒径为10.7 nm,且其XRD衍射峰强度比I₄₀₀/I₂₂₂最高为0.380;乙二醇与乙醇做溶剂,V_EG：V_EtOH=4：1,且NaOH浓度为0.275 mol·L^-1时,粉体电导率最高为46.75 mS·cm^-1。     

Self-assembly of coil-rod-coil molecules into bicontinuous cubic and oblique columnar assemblies depending on coil chain length

Coil-rod-coil molecules 1–3, consisting of four biphenyls and a p-terphenyl unit linked together with ether bonds as a rod segment and poly(propylene oxide) (PPO) with a degree of polymerization (DP) of 7, 12, 17 as coil segments were synthesized. These molecules contain lateral methyl groups at 2 and 5 positions of the middle benzene ring of p-terphenyl. The self-assembling behavior of molecules 1–3 was investigated by means of DSC, POM and SAXS in the bulk state. Molecule 1 self-organizes into a lamellar structure in the bulk state and transfers into a bicontinuous cubic structure in the liquid crystalline phase. While, molecules 2, 3 containing longer coil chains than 1 self-assemble into the hexagonal perforated lamellar (HPL) structures and the oblique columnar structures in the solid state and liquid crystalline phase, respectively. These results reveal that self-organizing behavior of such molecules is dramatically influenced by the length of the coil chains connected with the rod building block, as well as the lateral methyl groups incorporating in the middle of the rod segment.     

Tailoring of ionic supramolecular assemblies based on ammonium carboxylates toward liquid‐crystalline micellar cubic mesophases

Ionic liquid crystals based on ionic complexation of tris(2‐aminoethyl)amine (1) with 3,4,5‐tris(7,7,8,8,9,9,10,10,11,11,12,12,12‐tridecafluorododecyloxy)benzoic acid (2) and with 3,4,5‐tris(2‐octyldodecyloxy)benzoic acid (3) were investigated. The ionic complex with the partially fluorinated alkyl chains (1·2) exhibited a morphological transition from a hexagonal columnar mesophase to a Pm3n micellar cubic phase upon increasing the molar ratio of 2 to 1. For the complex with the branched alkyl chains (1·3) a micellar cubic mesophase was exclusively generated at appropriate composite ratios. The generation of the micellar cubic mesophases is attributed to the introduction of the laterally expanded volume of the alkyl chains compared with the corresponding normal dodecyl chains. Their thermal stabilities were most enhanced at a specific molar ratio of 1:5 for 1·2 and 1:4 for 1·3. This result corresponds to the most suitable chain volume for the stable micellar cubic mesophase.     

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Al₂O₃ insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al₂O₃/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al₂O₃ compound in the deposited film for which the EA was 1.6 eV. The Al₂O₃ film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al₂O₃/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.     

1‐Factor and Cycle Covers of Cubic Graphs

Let G be a bridgeless cubic graph. Consider a list of k 1‐factors of G. Let be the set of edges contained in precisely i members of the k 1‐factors. Let be the smallest over all lists of k 1‐factors of G. Any list of three 1‐factors induces a core of a cubic graph. We use results on the structure of cores to prove sufficient conditions for Berge‐covers and for the existence of three 1‐factors with empty intersection. Furthermore, if , then is an upper bound for the girth of G. We also prove some new upper bounds for the length of shortest cycle covers of bridgeless cubic graphs. Cubic graphs with have a 4‐cycle cover of length and a 5‐cycle double cover. These graphs also satisfy two conjectures of Zhang 18 . We also give a negative answer to a problem stated in 18 .     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Sulfur doping of AlN and AlGaN for improved n‐type conductivity

Achieving high levels of n‐type conductivity in AlN and high Al‐content nitride alloys is a long standing problem; significant decreases in conductivity are observed as the Al content is increased, a phenomenon that has been attributed to donors such as oxygen or silicon forming DX centers. We address this problem through a comprehensive first‐principles hybrid density functional study of potential n‐type dopants, identifying S_N and Se_N as two elements which are potential shallow donors because they do not undergo a DX transition. In particular, S_N is highly promising as an n‐type dopant because it also has a low formation energy and hence a high solubility. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)