Long-time asymptotics in the one-dimensional trapping problem with large bias

The survival probability of a particle which moves according to a biased random walk in a one-dimensional lattice containing randomly distributed deep traps is studied at large times. Exact asymptotic expansions are deduced for fields exceeding a certain threshold, using the method of images. In order to cover the whole range of fields, we also derive the behavior of the survival probability below this threshold, using the eigenvalue expansion method. The connection with the continuous diffusion model is discussed.     

Beyond Einstein's radiation theory

Einstein's radiation mechanism is generalized to account for the possibility of population inversion by placing a nonlinear bound on the growth of an unstable perturbation. The nonstationary linear mechanism of relaxation to blackbody radiation below threshold is studied. The nonstationary photon distribution is the negative binomial distribution, and casting it as a law of error, for which the most probable value is the mean value, gives the expression for the statistical entropy. The second law yields a nonequilibrium generalization of Planck's radiation law. The nonlinear mechanism leading to the transformation from the negative binomial probability distribution, for chaotic light, to a Poisson probability distribution, for coherent light, is then analyzed. A criterion for lasing is given in terms of the chemical potential of radiation which is compared to the inequality for the transition from quantum to classical statistics.     

Properties of the skeleton of aggregates grown on a Cayley tree

We discuss and analyze a family of trees grown on a Cayley tree, that allows for a variable exponent in the expression for the mass as a function of chemical distance, M(l)l ^dl . For the suggested model, the corresponding exponent for the mass of the skeleton,d _l ^s , can be expressed in terms ofd _l asd _l ^s = 1,d _l d _l ^c = 2;d _l ^s = d _l –1,d ₁ d _l ^c = 2, which implies that the tree is finitely ramified ford _l 2 and infinitely ramified whend _l 2. Our results are derived using a recursion relation that takes advantage of the one-dimensional nature of the problem. We also present results for the diffusion exponents and probability of return to the origin of a random walk on these trees.     

新概念高能激光武器与强激光光学计量检测技术

新概念高能激光武器的研究与发展已有四十多年的历史。第一代高能激光武器主要采用连续波化学激光器，其输出功率可达百万瓦。第二代高能激光武器主要采用了波长更短的节能固体激光器件，其输出功率为100kW。与第一代高能化学激光武器采用超高能量直接烧毁杀伤目标不同，第二代高能固体激光武器寻求节能型杀伤方式，即以最小程度的破坏来实现致命杀伤的效果。随着高能激光武器的发展和实战部署，作为高能激光武器核心的高能激光系统总体性能参数(能量/功率、激光波形、光束质量、近场和远场的强度分布、光束指向稳定性、光谱和偏振特性等)的计量和测试显得尤为重要。文中围绕新概念高能激光武器的历史、研究现状和未来发展展开论述。高能激光武器系统的研制对强激光光学计量检测技术提出的新要求和挑战有助于推进强激光光学计量检测技术的发展。     

Oscillations in three-reaction quadratic mass-action systems

It is known that rank-two bimolecular mass-action systems do not admit limit cycles. With a view to understanding which small mass-action systems admit oscillation, in this paper we study rank-two networks with bimolecular source complexes but allow target complexes with higher molecularities. As our goal is to find oscillatory networks of minimal size, we focus on networks with three reactions, the minimum number that is required for oscillation. However, some of our intermediate results are valid in greater generality. One key finding is that an isolated periodic orbit cannot occur in a three-reaction, trimolecular, mass-action system with bimolecular sources. In fact, we characterize all networks in this class that admit a periodic orbit; in every case, all nearby orbits are periodic too. Apart from the well-known Lotka and Ivanova reactions, we identify another network in this class that admits a center. This new network exhibits a vertical Andronov–Hopf bifurcation. Furthermore, we characterize all two-species, three-reaction, bimolecular-sourced networks that admit an Andronov–Hopf bifurcation with mass-action kinetics. These include two families of networks that admit a supercritical Andronov–Hopf bifurcation and hence a stable limit cycle. These networks necessarily have a target complex with a molecularity of at least four, and it turns out that there are exactly four such networks that are tetramolecular.     

Effect of microstructure on thermoelectric properties of CSD-grown Bi2Sr2Co2Oy thin films

Three Bi₂Sr₂Co₂O_y thin films with different microstructures have been prepared by chemical solution deposition on LaAlO₃(001) through varying the annealing temperature. With the decrease in the annealing temperature, both the size and c-axis alignment degree of grains in the film decrease as well, leading to an increase in the film resistivity. In addition, the decrease in the annealing temperature also results in a slight increase in the seebeck coefficient due to the enhanced energy filtering effect of small-grain film. The nanostructured Bi₂Sr₂Co₂O_y film with the average grain size of about 100 nm shows a power factor comparable to that of the films with larger grains. Since the thermal conductivity of the nanostrcutured films can be depressed due to the enhanced phonon scattering by grain boundary, a higher figure of merit is expected in Bi₂Sr₂Co₂O_y thin film with grains in nanometer size.     

Generalized nonlinear master equations for local fluctuations: Dimensionality expansions and augmented mean field theory

By application of a projection operator technique we derive a formally exact generalization of the nonlinear mean field master equation introduced recently for the study of local fluctuations in a reacting medium. Our starting point is a phenomenological cell master equation. The results of our theory are applicable to the theory of a fluctuating hydrodynamic reacting system. The mean field equation is placed on a firm theoretical foundation by showing it to be the lowest order approximation in an expansion in the dimensionality of the physical space keeping the product of the number of nearest neighbors (an increasing function of dimensionality) and the typical diffusion coefficient constant. A more accurate nonlinear master equation that allows for the correlation and fluctuations in the environment of a given volume element is derived in the form of an augmented mean field equation.Work supported in part by a grant from the National Science Foundation.     

An observation on the effect of fluctuations far from equilibrium: The Lotka-Volterra model

Spontaneous fluctuations in the Lotka-Volterra model of chemical reactions are known to grow in an unbounded way when species held in excess are neglected. This result is obtained in a simple way using generalized fluctuation-dissipation principles but appears to be an artifact of ignoring fluctuations in the variables that are held fixed. When fluctuations in the other concentrations are included in the model, the spontaneous fluctuations become bounded.This work was supported by the National Science Foundation through Research Grant No. MPS 74-00483 AO1.     

Kinetic studies of antimony and selenium atomization processes including a chemical modifier during their determination by electrothermal atomic absorption spectrometry

We have studied antimony and selenium atomization processes including a chemical matrix modifier (palladium-containing activated carbon) during their determination by electrothermal atomic absorption spectrometry. We have developed and fine-tuned an experimental setup for determining the kinetic characteristics (activation energy and frequency factor) for element atomization processes from measurements in the initial section of the analytical signal. We provide a rationale for the most likely mechanism for the interactions that occur. The results of the kinetic studies of the atomization processes showed that the modifier we developed was highly effective, as a result of formation of a thermally stable condensed system C-Pd-A (where A is the analyte). __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 530–534, July–August, 2006.     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).