标准CMOS工艺载流子注入型三端Si-LED的设计与研制

采用无锡华润上华(CSMC) 0.5 μm 标准CMOS工艺,设计并制备了一种新型的高发光功率载流子注入型三端Si-LED器件。该器件在p型衬底上进行n⁺掺杂,与p衬底形成两个相对的n⁺p结,其中一个结正向偏置,发出峰值波长在1 100 nm附近的红外光;另一个结同样正偏,作为注入结对发光进行调制。测试结果显示:第三端注入载流子明显增强了总体的发光功率,在10 mA偏置电流、3 V调制电压下,可获得1 nW的光功率,与单结相比提高了两个数量级。由于工作电压低,该器件可与目前主流的CMOS工艺共电源单芯片集成,在光电集成领域具有一定的应用前景。     

pr3+ 激活的CaMoO4红色荧光粉的发光性质

采用高温固相法制备了稀土pr3+激活的Ca1-xPrxMoO4(0.005≤x≤0.02)系列红色荧光粉.荧光光谱表明:在453 nm激发下,样品产生了红光发射,其中对应于pr3+的特征跃迁3 P0→3F2位于654 nm的红色发射峰最强.分析了pr3的掺杂摩尔分数x对样品发光强度的影响,确定pr3+的最佳掺杂摩尔分数...     

Charging dynamics of polymer due to electron irradiation: A simultaneous scattering-transport model and preliminary results

We present a novel numerical model and simulate preliminarily the charging process of polymer subjected to electron irradiation of several 10 keV. The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons. The dynamic spatial distribution of charges is obtained and validated by existing experimental data. Our simulations show that excess negative charges are concentrated near the edge of the electron range. However, the formed region of high charge density may extend to the surface and bottom of a kapton sample, due to the effects of electric field on electron scattering and charge transport, respectively. Charge trapping is then demonstrated to significantly influence the charge motion. The charge distribution can be extended to the bottom as the trap density decreases. Charge accumulation is therefore balanced by the appearance and increase of leakage current. Accordingly, our model and numerical simulation provide a comprehensive insight into the charging dynamics of polymer irradiated by electrons in the complex space environment.     

Photophysical properties of a series of 4‐aryl substituted 1,4‐dihydropyridines

In this article, a series of Hantzsch 1,4‐dihydropyridines with different substituted aryl groups were synthesized and its spectral data obtained by UV–Vis absorption and fluorescence emission spectroscopies in solution. The dihydropyridines present absorption located around 350 nm and fluorescence emission in the blue–green region. A higher Stokes’ shift could be observed for the derivative 3b because of an intramolecular charge transfer in the excited state from the dimethylaniline to the dihydropyridine chromophores, which was corroborated by a linear relation of the fluorescence maxima (ν_max) versus the solvent polarity function (Δf) from the Lippert–Mataga correlation. A comparison between the experimental data and time‐dependent density functional theory‐polarizable continuum model calculations of the vertical transitions was performed to help on the elucidation of the photophysics of these compounds. For these calculations, the S₀ and S₁ states were optimized using Becke, three‐parameter, Lee–Yang–Parr/6‐31 G* and Configuration Interaction Singles/6‐31 G*, respectively. The predicted absorption maxima are in good agreement with the experimental; however, the theoretical fluorescence emission maxima do not match the experimental, which means that the excited specie cannot be related to neither a locally excited state nor to an aromatized structure. Copyright © 2012 John Wiley & Sons, Ltd.     

Structural distortion,charge modulation and local anisotropies in magnetite below the Verwey transition using resonant X‐ray scattering

The pattern of charge modulations and local anisotropies below the Verwey transition has been determined and quantified in high‐quality Fe₃O₄ single crystals and thin films grown on MgO by using resonant X‐ray scattering at the Fe K‐edge. The energy, polarization and azimuthal angle dependencies of an extensive set of reflections with potential sensitivity to charge or local anisotropy orderings have been analyzed to explore their origins. A charge disproportion on octahedral B sites of 0.20 ± 0.05 e^? with [0 0 1] and cubic periodicities has been confirmed, while no significant charge disproportion has been obtained with [0 0 1/2] cubic periodicity. Additional charge modulations in the monoclinic a–b plane are also present. In addition, the occurrence of new forbidden (1, 1, 0) and (0, 0, 2n + 1/2) cubic reflections that arise from the anisotropy of the local structure around different tetrahedral and octahedral Fe atoms is shown. This complex pattern of weak charge modulations and local anisotropies is fully compatible with the low‐temperature crystal structure refined in the non‐polar C2/c space group and disproves any bimodal charge disproportion of the octahedral Fe atoms.     

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation.Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters,the temperature plays different roles in the SET production and propagation.The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases.The investigation provides a new insight into the SET mitigation under the extreme environment,where both the high temperature and the single event effects should be considered.The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.     

Charge ordering modulations in Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

Low temperature sample stage in transmission electron microscope is used to investigate the charge ordering behaviours in Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using selected-area electron diffraction (SAED) technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy (HRTEM) images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface from those in the region a little far from the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface, and the possible reasons are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

An emittance measurement device for a space-charge dominated electron beam

Beam emittance is one of the most important parameters for electron sources. To investigate the beam emittance of the 3.5-cell DC-SC photocathode injector developed at Peking University, a multi-slit emittance measurement device has been designed and manufactured. The designed slit width, mask thickness and beamlet drift length are 100 μ m, 3 mm and 430 mm respectively. It is suitable for the electron beam with energy of about 5 MeV and the average current less than 0.1 mA. The preliminary measurement result of the rms emittance of the electron beam produced by the DC-SC injector is about 5-7 mm·mrad.     

爆炸电子发射初期阴极表面电场的研究

为了研究二极管爆炸电子发射初始阶段阴极表面复杂的物理现象及规律, 建立了由场致电子发射阴极构成的一维平板真空二极管物理模型,通过自行编程数值求解泊松方程, 考虑了发射出的电子对阴极表面电场的非线性影响,自洽模拟得到了阴极表面电场随时间的变化情况. 模拟结果表明,爆炸电子发射初期,阴极表面电场随时间的增加而呈现出不断振荡的规律, 且振荡幅度越来越小,最终到达一个稳态的值,二极管两极板之间的外加电场越大, 阴极表面稳态电场的绝对值越大;电场增强系数越大,阴极表面稳态电场的绝对值越大. 在整个时间演变过程中,阴极表面的实际电场强度决定着阴极发射的电流密度大小, 反过来阴极发射的电流密度又会影响到阴极表面的电场.     

Ultrafast carrier dynamics in purified and as-grown single-walled carbon nanotube films

Ultrafast time-resolved optical transmissions in purified and as-grown single-walled carbon nanotube films are measured at a temperature of 200K. The signal of the purified sample shows a crossover from photobleaching to photoabsorption. The former and the latter are interpreted as the state filling and the red shift of the π-plasmon, respectively. The signal of the as-grown sample can be perfectly fitted by a single-exponential with a time constant of 232fs. The disappearance of the negative component in the as-grown sample is attributed to the charge transfer between the semiconducting nanotubes and the impurities.