Derivation of the Kissinger equation for non-isothermal glass transition peaks

A brief derivation of the Kissinger’s equation for analysis of experimental data of non-isothermal glass transition peaks based on the free volume model is given. This equation was applied successfully to Cu_0.3(SSe₂₀)_0.7 chalcogenide glass for different heating rates. For granted this model, the obtained glass transition activation energy, E _g must be constant throughout the whole glass transition temperature range. This required that T _g to be determined for three characteristic temperature points for each DSC curve.     

Beiträge zur Kristallchemie der Urantelluride. II. Die Kristallstruktur des Diuranpentatellurids U2Te5

Contributions to the Crystal Chemistry of Uranium Tellurides. II. The Crystal Structure of Diuranium Pentatelluride U₂Te₅ Via chemical transport reactions with TeBr₄ as transporting agent single crystals of the title compound up to a size of 5 mm were available from the elements. The analysis by atomic emission spectrometry gave UTe_2.52(4). By X-ray single crystal structure analysis we found that U₂Te₅ crystallizes monoclinic (space group C2/m, Z = 4) with a = 3443.3(5) pm, b = 418.65(3) pm, c = 607.97(6) pm and β = 95.35(1)º in a new structure type. The layer structure is built up by bicapped trigonal prisms, one half as isolated building units, the other connected via faces as fourfold capped biprisms. A structural relationship of diuranium pentatelluride to the adjacent phases in the phase diagram U? Te can be expressed by the formulation as UTe₂ · UTe₃.     

Expanded polycationic mercury-chalcogen networks in the layered compounds Hg3E2[MX6] (E=S, Se; M=Zr, Hf; X=Cl, Br)

The reactions of HgE (E=S, Se) with HgX₂ and MX₄ (M=Zr, Hf; X=Cl, Br) in evacuated glass ampoules lead to a series of isotypic compounds of the general formula Hg₃E₂[MX₆] in the form of colorless (X=Cl) and light-yellow (X=Br) air-sensitive crystals. The crystal structures of Hg₃S₂[ZrCl₆] (I), Hg₃S₂[HfCl₆] (II), Hg₃Se₂[ZrCl₆] (III), Hg₃Se₂[HfCl₆] (IV), Hg₃S₂[ZrBr₆] (V), and Hg₃Se₂[ZrBr₆] (VI) were refined based on single-crystal data. All compounds crystallize in the monoclinic space group P2₁/a with the lattice parameters a=662.18(2) pm, b=734.97(3) pm, c=1290.83(5) pm, β=91.755(2)° for (I) and and a=701.97(3) pm, b=756.79(3) pm, c=1350.99(6) pm, β=92.164(3)° for (VI). The structures are built of (Hg₃E₂)²⁺ layers stacked perpendicular to the c-axis. The polycationic layers consist of two-dimensionally linked 12-membered Hg₆E₆ rings in the chair conformation with linear coordinated Hg and trigonal pyramidal coordinated chalcogen atoms. Almost regular octahedral [MX₆]²⁻ ions are embedded between the layers. This arrangement is closely related to the structure of Hg₃S₂[SiF₆], which represents a higher symmetric congener. The structure relation is discussed using the supergroup-subgroup relation between space groups.     

Thermal stability of the amorphous system Ge20As14(SexS1−x)52I14

Results of thermal investigations of the amorphous five-component chalcogenide system Ge₂₀As₁₄(Se_xS_1?x)₅₂I₁₄ are presented. Differential thermal analysis (DTA), derivative differential thermal analysis (DDTA), and dilatometry were employed to determine the temperatures of softening and partial crystallization of the samples. Thermal treatment of the samples at 1000°C and recording of the corresponding thermogravimetric (TG) and derivative thermogravimetric (DTG) curves allowed an elucidation of the full mechanism of their decomposition, which proceeds via seven characteristic phase transitions.     

Reactivity of [Te6Fe8(CO)24]2− and Its Conversion to [Te4Fe5(CO)14]2−

Whereas reaction of [PhCH₂NMe₃]₂|Te₆Fe₈(CO)₂₄] (1) in refluxing CH₂CI₂ forms Fe₂(CO)₆(μ0-) TeCH₂Te), treatment of 1 with Ph₂SnCl ₂ or Mel gave the oxidation product Te₂Fe₃(CO)₉. Oxidation of 1 with [Cu(CH₃CN)₄]BF₄ afforded Te₂Fe₃(CO)₉ in good yield. Cluster 1 was converted to [PhCH₂NMe₃][Te₄Fe₅(CO)₁₄] (2) in MeOH/CH₂Cl₂ solution. Cluster 2 was structurally characterized by single-crystal X-ray diffraction and spectral methods. Complex 2 is composed of two Te₂Fe₂(CO)₆ fragments linked by one Fe(CO)₂ group. 2 crystallizes in the orthorhombic space group Pbcn with a = 13.351 (4) Å, b = 13.417 (4) Å, c = 26.077 (3) Å, V = 4671 (2) Å ₃, Z = 4.     

Accurate X-ray diffraction data required for proper evaluation of bond valence sums and global instability indexes: redetermination of the crystal structures of diamond-like Cu2CdSiS4 and Cu2HgSnS4 as a case study

Our calculations of the global instability index (G) values for some diamond-like materials with the general formula I₂–II–IV–VI₄ have indicated that the structures may be unstable or incorrectly determined. To compute the G value of a given compound, the bond valence sums (BVSs) must first be calculated using a crystal structure. Two examples of compounds with high G values, based on data from the literature, are the wurtz–stannite-type dicopper cadmium silicon tetrasulfide (Cu₂CdSiS₄) and the stannite-type dicopper mercury tin tetrasulfide (Cu₂HgSnS₄), which were first reported in 1967 and 1965, respectively. In the present study, Cu₂CdSiS₄ and Cu₂HgSnS₄ were prepared by solid-state synthesis at 1000 and 900 °C, respectively. The phase purity was assessed by powder X-ray diffraction. Optical diffuse reflectance UV/Vis/NIR spectroscopy was used to estimate the optical bandgaps of 2.52 and 0.83 eV for Cu₂CdSiS₄ and Cu₂HgSnS₄, respectively. The structures were solved and refined using single-crystal X-ray diffraction data. The structure type of Cu₂CdSiS₄ was confirmed, where Cd²⁺, Si⁴⁺ and two of the three crystallographically unique S²⁻ ions lie on a mirror plane. The structure type of Cu₂HgSnS₄ was also verified, where all ions lie on special positions. The S²⁻ ion resides on a mirror plane, the Cu⁺ ion is situated on a fourfold rotary inversion axis and both the Hg²⁺ and the Sn⁴⁺ ions are located on the intersection of a fourfold rotary inversion axis, a mirror plane and a twofold rotation axis. Using the crystal structures solved and refined here, the G values were reassessed and found to be in the range that indicates reasonable strain for a stable crystal structure. This work, together with some examples gathered from the literature, shows that accurate data collected on modern instrumentation should be used to reliably calculate BVSs and G values.     

Designing and tuning properties of a three-dimensional porous quaternary chalcogenide built on a bimetallic tetrahedral cluster [M4Sn3S13] (M=Zn/Sn)

A multifunctional three-dimensional quaternary chalcogenide [Na₅Zn_3.5Sn_3.5S₁₃]·6H₂O has been synthesized by solvothermal reactions. [Na₅Zn_3.5Sn_3.5S₁₃]·6H₂O represents an interesting example of metal chalcogenides that combines semiconductivity, porosity, and light emission in a single structure. It crystallizes in the cubic space group Fm-3c, a=17.8630(3) Å, V=5699.85(17) Å³, Z=8. The compound decomposes at ∼450 °C. A band gap of 2.9 eV is estimated from the optical diffuse reflectance data. A strong photoluminescence peak is observed at 2.43 eV in Mn doped samples. The electronic and optical properties of this compound can be systematically tuned by substitution of metal and chalcogen elements.     

Crystal structure of K2[Mo3(PdPPh3)S4(C2O4)3(H2O)3]·0.5H2O

By the reaction of [Mo₃S₄(C₂O₄)₃(H₂O)₃]²⁻ with PdCl₂ and NH₄H₂PO₂ as a reducing agent, followed by the addition of PPh₃, a new oxalate cuboidal cluster complex [Mo₃(PdPPh₃)S₄(C₂O₄)₃(H₂O)₃]²⁻ is obtained. It was isolated and structurally characterized as K₂[Mo₃(PdPPh₃)S₄(C₂O₄)₃(H₂O)₃]·0.5H₂O. Original Russian Text Copyright ? 2008 by A. L. Gushchin, M. N. Sokolov, D. Yu. Naumov, and V. P. Fedin __________ Translated from Zhurnal Strukturnoi Khimii, Vol. 49, No. 4, pp. 775–778, May–June, 2008.     

Pressure-induced electronic and structural transformations in bulk GeSe2 glass

The pressure dependence of the electrical resistivity of bulk GeSe₂ glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using the x-ray diffractometer and is found to be crystalline, with a face-centred cubic structure havinga = 4·06 A. The electrical conductivity has also been studied as a function of temperature at various pressures.     

A study of thermal crystallization in glassy Se80Te20 and Se80In20 using DSC technique

Different methods have been used by various workers to determine the activation energy of thermal crystallization (E_c) in chalcogenide glasses using non-isothermal DSC data. In the present work, the crystallization kinetics of two important binary alloys Se₈₀Te₂₀ and Se₈₀In₂₀ is studied using non-isothermal DSC data. DSC scans of these alloys have been taken at five different heating rates. The values of activation energy of crystallization (E_c) have been determined by four different methods, i.e., Kissinger's method, Matusita-Sakka method, Augis-Bennett's method and Ozawa's method, have been used to calculate E_c. The results obtained have been compared with each other to see the effect of using different methods in the determination of E_c.