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11.
Stanislav S. Stoyko Andrew J. Craig Joshua W. Kotchey Jennifer A. Aitken 《Acta Crystallographica. Section C, Structural Chemistry》2021,77(1):1-10
The new quaternary thiosilicate, Li2PbSiS4 (dilithium lead silicon tetrasulfide), was prepared in an evacuated fused‐silica tube via high‐temperature, solid‐state synthesis at 800 °C, followed by slow cooling. The crystal structure was solved and refined using single‐crystal X‐ray diffraction data. By strict definition, the title compound crystallizes in the stannite structure type; however, this type of structure can also be described as a compressed chalcopyrite‐like structure. The Li+ cation lies on a crystallographic fourfold rotoinversion axis, while the Pb2+ and Si4+ cations reside at the intersection of the fourfold rotoinversion axis with a twofold axis and a mirror plane. The Li+ and Si4+ cations in this structure are tetrahedrally coordinated, while the larger Pb2+ cation adopts a distorted eight‐coordinate dodecahedral coordination. These units join together via corner‐ and edge‐sharing to create a dense, three‐dimensional structure. Powder X‐ray diffraction indicates that the title compound is the major phase of the reaction product. Electronic structure calculations, performed using the full potential linearized augmented plane wave method within density functional theory (DFT), indicate that Li2PbSiS4 is a semiconductor with an indirect bandgap of 2.22 eV, which compares well with the measured optical bandgap of 2.51 eV. The noncentrosymmetric crystal structure and relatively wide bandgap designate this compound to be of interest for IR nonlinear optics. 相似文献
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以有机溶剂热生长技术(Solvothermal Technique)在180 ℃乙二胺(en)溶液中以SbCl3与碱金属硒化物Cs2Se和Se在密闭容器中反应7 d,制备出新的金属硫族化合物CsSb2(Se2)0.5Se3。以单晶X射线衍射技术测得晶体结构属三斜晶系,空间群为P1,晶胞参数:a=0.653 0(2) nm,b=0.707 1(3) nm,c=0.979 9(4) nm,α=80.37(3)°,β=86.28(3)°,γ=74.61(3)°,V=0.430 0(3)
nm3,Z=2。 相似文献
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We report for the first time to our knowledge on the preparation of colloidal solution of chalcogenide semiconductor As2S3 by laser ablation and the measurements of its nonlinear-optical characteristics using Z-scan method at the wavelength of Nd:YAG laser radiation ( = 1064 nm, = 25 ns). The nonlinear refractive index was measured to be –7.5 × 10–18 m2 W–1. Nonlinear absorption coefficient of chalcogenide solution was measured to be 1 cm GW–1. 相似文献
17.
采用磁控三靶(Si,Sb及Te)共溅射法制备了Si掺杂Sb2Te3薄膜,作为对比,制备了Ge2Sb2Te5和Sb2Te3薄膜,并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明,Si掺杂提高了Sb2Te3薄膜的晶化温度以及薄膜的晶态和非晶态电阻率,使得其非晶态与晶态电阻率之比达到106,提高了器件的电阻开/关比;同Ge2Sb2Te5薄膜相比,16at% Si掺杂Sb2Te3薄膜具有较低的熔点和更高的晶态电阻率,这有利于降低器件的RESET电流.研究还表明,采用16at% Si掺杂Sb2Te3薄膜作为存储介质的存储器器件原型具有记忆开关特性,可以在脉高3V、脉宽500ns的电脉冲下实现SET操作,在脉高4V、脉宽20ns的电脉冲下实现RESET操作,并能实现反复写/擦,而采用Ge2Sb2Te5薄膜的相同结构的器件不能实现RESET操作.
关键词:
相变存储器
硫系化合物
2Te3薄膜')" href="#">Si掺杂Sb2Te3薄膜
SET/RESET转变 相似文献
18.
This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well. 相似文献
19.
Nobukazu Taniguchi 《Tetrahedron》2009,65(14):2782-1357
A copper-catalyzed synthesis of β-haloalkenyl sulfides or selenides was carried out by addition of dichalcogenides and tetrabutylammonium halides to internal alkynes. The present reaction anti- and regio-selectively afforded the corresponding alkenyl chalocogenides, and took advantage of both organochalcogenide-groups on dichalcogenide. Furthermore, the reaction under oxygen atmosphere could employ thiols. The use of the procedure could easily synthesize (Z)-tamoxifen from diphenyl acetylene in three steps. 相似文献
20.