Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.     

On‐chip stimulated Brillouin Scattering for microwave signal processing and generation

Demonstration of continuously tunable delay, low‐noise lasers, dynamically controlled gratings, and optical phase shifting using the stimulated Brillouin scattering (SBS) process has lead to the emergence of SBS as a promising technology for microwave photonics. On‐chip realization of SBS enables photonic integration of microwave photonic signal processing and offers significantly enhanced performance and improved efficiency. On‐chip stimulated Brillouin scattering is reviewed in the context of slow‐light based tunable delay, low‐noise narrow linewidth lasers and filtering for integrated microwave photonics. A discussion on key material and device properties, necessary to enable on‐chip Brillouin scattering using both the single‐pass and resonator geometry, is presented along with an outlook for photonic integration of microwave signal processing and generation in other platforms.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.     

Electrical transport and high pressure studies on bulk Ge20Te80 glass

The electrical resistivity of bulk Ge₂₀Te₈₀ has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K.     

Ge-Sb-Se硫系薄膜制备及光学特性研究

介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.     

Numerical investigation on broadband mid-infrared supercontinuum generation in chalcogenide suspended-core fibers

As_2S_3 and As_2Se_3 chalcogenide 3-bridges suspended-core fibers(SCFs) are designed with shifted zero-dispersion wavelengths(ZDWs) at around 1.5 μm, 2 μm, and 2.8 μm, respectively. A generalized nonlinear Schr ¨odinger equation is used to numerically compare supercontinuum(SC) generation in these SCFs pumped at an anomalous dispersion region nearby their ZDWs. Evolutions of the long-wavelength edge(LWE), the power proportion in the long-wavelength region(PPL), and spectral flatness(SF) are calculated and analyzed. Meanwhile, the optimal pump parameters and fiber length are given with LWE, PPL, and SF taken into account. For As_2S_3 SCFs, SC from a 14 mm-long fiber with a ZDW of 2825 nm pumped at 2870 nm can achieve the longest LWE of ～ 13 μm and PPL up to ～72%. For As_2Se_3 SCFs, the LWE of 15.5 μm and the highest PPL of ～ 87% can be achieved in a 10 mm-long fiber with ZDW of 1982 nm pumped at 2000 nm. Although the As_2Se_3 SCFs can achieve much longer LWE than the As_2S_3 SCFs, the core diameter of As_2Se_3 SCFs will be much smaller to obtain a similar ZDW, leading to lower damage threshold and output power. Finally, the optimal parameters for generating SC spanning over different mid-IR windows are given.     

Pre-exponential factor for non-isothermal crystallization of glassy Se85− x Te15Sb x (0 ≤ x ≤ 10) alloys

We report observations of the Meyer–Neldel rule for the non-isothermal crystallization of glassy Se_{85? x} Te₁₅Sb _x (x =?0, 2, 4, 6, 8, 10) alloys. We found a strong co-relation between the pre-exponential factor K ₀ of the rate constant K(T) for crystallization and the activation energy of crystallization E _c. This indicates the presence of a compensation effect for the non-isothermal crystallization process in this glassy system. The composition dependence of the crystallization temperature T _c and the activation energy for crystallization E _c is discussed.     

新型单模大模场红外硫系玻璃光子晶体光纤设计研究

大模场光子晶体光纤在高功率激光传输、光纤放大器、光纤激光器中的广泛应用, 使其受到研究者的广泛关注.硫系玻璃在红外波段(1–20μm)具有优良透过性能, 且具有折射率高(2.0–3.5)、声子能量低(小于350 cm^-1)、 组分可调等特性, 成为制备红外光纤的理想材料. 本文设计一种基于Ge₂₀Sb₁₅Se₆₅硫系玻璃基质的新型单模传输、低损耗、超大模场面积光子晶体光纤结构, 经理论验证其在λ =10.6 μm处基模限制损耗远低于0.1 dB/m, 高阶限制模损耗大于2 dB/m, 模场面积约为13333 μm². 关键词： 硫系玻璃 大模场面积 红外光子晶体光纤 结构设计     

硫化砷非晶态波导光阻断效应的机理研究

在实验研究了As₂S₈和掺杂As₂S₈薄膜波导光阻断效应的基础上,讨论了反常电子组态的形成机理和转移机理,提出了光阻断效应切断过程和回复过程的动力学模型,数值分析结果与实验数据十分符合,理论预期与实验现象一致,表明该模型抓住了光阻断效应的基本特征,揭示了过程本质,反映了实验现象的内在机理. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 动力学模型