Deep‐red light‐emitting phosphorescent dendrimer encapsulated tris‐[2‐benzo[b]thiophen‐2‐yl‐pyridyl] iridium (III) core for light‐emitting device applications

New deep‐red light‐emitting phosphorescent dendrimers with hole‐transporting carbazole dendrons were synthesized by reacting tris(2‐benzo[b]thiophen‐2‐yl‐pyridyl) iridium (III) complex with carbazolyl dendrons by DCC‐catalyzed esterification. The resulting first‐, second‐, and third‐generation dendrimers were found to be highly efficient as solution‐processable emitting materials and for use in host‐free electrophosphorescent light‐emitting diodes. We fabricated a host‐free dendrimer EL device with configuration ITO/PEDOT:PSS (40 nm)/dendrimer (55 nm)/BCP (10 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (100 nm) and characterized the device performance. The multilayered devices showed luminance of 561 cd/m² at 383.4 mA/cm² (12 V) for 15 , 1302 cd/m² at 321.3 mA/cm² (14 V) for 16 , and 422 cd/m² at 94.4 mA/cm² (18 V) for 17 . The third‐generation dendrimer, 17 (η_ext = 6.12% at 7.5 V), showed the highest external quantum efficiency (EQE) with an increase in the density of the light‐harvesting carbazole dendron. Three dendrimers exhibited considerably pure deep‐red emission with CIE 1931 (Commission International de L'Eclairage) chromaticity coordinates of x = 0.70, y = 0.30. The CIE coordinates remained very stable with the current density. The integration of rigid hole‐transporting dendrons and phosphorescent complexes provides a new route to design highly efficient solution‐processable materials for dendrimer light‐emitting diode (DLED) applications. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 7517–7533, 2008     

Improving the specularity of magnetic mirrors for atoms

An array of anti-parallel current-carrying wires creates an inhomogeneous magnetic field capable of reflecting neutral atoms. We present analytical and numerical analyses of the magnetic field produced by such an array, and describe methods for reducing the resulting rms angular deviation from specular reflection to less than 0.1 mrad. Careful choice of cross-sectional wire profiles is shown to dramatically improve specularity of reflection close to the surface. Additionally, we find that the specularity depends on whether the number of wires in the mirror is even or odd, and that there exists an optimal turning height above the surface that maximizes the specularity of reflection from the mirror. Received 16 November 1998     

Field‐effect transistors based on PPV derivatives as a semiconducting layer

A series of modified thiophene groups containing PPV‐based semiconducting materials, poly[(2,5‐bis(octyloxy)‐1,4‐phenylenevinylene)‐alt‐(2,2′bithienylenevinylene)] ( PPBT ), poly[(2,5‐bis(octyloxy)‐1,4‐phenylenevinylene)‐alt‐(5,5‐thiostilylenevinylene)] ( PPTVT ), have been synthesized through a Horner coupling reaction. From the FTIR and ¹H NMR spectroscopy, the configuration of the vinylene groups in the polymers was all trans (E) geometry. The weight‐average molecular weights (M_w) of PPBT and PPTVT were found to be 11,700 and 11,800, with polydispersity indices of 2.51 and 2.53, respectively. PPBT and PPTVT thin films exhibit UV–visible absorption maxima at 538 and 558 nm, respectively, and the strong absorption shoulder peaks at 578 and 602 nm, respectively. Solution processed field‐effect transistors (FET) fabricated using all the polymers showed p‐type OTFT characteristics. The field‐effect mobility of the PPTVT was obtained up to 2.3 × 10^?3 cm² V^?1 s^?1, an on/off ratio of 1.0 × 10⁵ with ambient air stability. Studies of the atomic force microscopy (AFM) and X‐ray diffraction (XRD) analysis of the polymer thin films revealed that all the polymers were amorphous structure. The greater planarity and rigidity of PPTVT compared to PPBT results in elongation of conjugation length and better π–π stacking of polymer chains in amorphous region, which leads to improved FET performance. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 111–120, 2009     

Ultrafast Nonlinear Optical Properties of a Graphene Saturable Mirror in the 2 μm Wavelength Region

Mid‐infrared ultrafast lasers have emerged as a promising platform for both science and industry because of their inherent high raw power and eye‐safe spectrum. 2D nanostructures such as graphene have emerged as promising photonic materials for laser mode‐locking to generate ultrashort pulses. However, there are still many unanswered questions about graphene's key advantages to be practical devices, especially over the matured semiconductor saturable absorber mirror (SESAM). In this work, we conducted systematic comparisons on the nonlinear optical properties of graphene and that of a commercial SESAM at 2 μm wavelength. Our results showed that graphene has significant advantages over the commercial SESAM, exhibiting ∼28% less absorptive cross‐section ratio of excited‐state to ground‐state and ∼50 times faster relaxation time. This implies that graphene can be exploited as a better mode‐locker than the current commercial SESAM for high power, high repetition rate and ultrafast mid‐infrared laser sources.     

Nonlinear wave interactions in patterned Silica and AlGaAs waveguides

We study nonlinear interactions between discrete optical solitons that propagate in different regimes of diffraction, and the nonlinear scattering of dispersive waves by local optical potentials. It is well known in optics that when linear coherent waves meet, they interfere without interactions. Linear waves also scatter through local optical structures not exchanging any power with the guided modes of these structures. As a focusing Kerr nonlinearity is present, such linearly-inhibited phenomena can exist. Our studies are performed in silica and AlGaAs nonlinear waveguides, excited by ultra-short pulses in the near infrared. Presented at 9-th International Workshop on Nonlinear Optics Applications, NOA 2007, May 17–20, 2007, Świnoujście, Poland     

放电管直径和水含量对脂肪醚气相微波放电分解产生活泼自由基影响的ESR研究

本文用自旋捕捉技术与ESR相结合方法,系统研究了放电管直径及水含量对低压下脂肪醚气相微波放电分解产生自由基的影响。表明:随着放电管直径减小,放电时碳化现象加重,H·原子寿命变短;含水量加大,碳化剧烈。并根据其放电机理,对以上现象发生的原因进行一定的探讨。     

电极过程自由基中间体的ESR研究——取代苯基重氮盐的电解还原

本文用自由基捕捉剂苯亚甲基叔丁基氮氧化物(PBN)与ESR相结合的方法研究了十种取代苯基重氮盐RC₆H₄N₂⁺BF₄^-(R=F,Cl,Br,NO₂,OCH₃及CH₃)在乙腈中电解还原产生的活泼自由基。结果表明:1.RC₆H₄N₂⁺BF₄^-电解还原时产生RC₆H₄自由基,并能被捕捉剂PBN所捕捉,以形成稳定的自由基加合物[RC₆H₄-PBN]^·。2.由[RC₆H₄-PBN]^·ESR谱的超精细裂分常数算出的二面角θ_β值大小与处于不同位置的给定取代基R的关系为:θ_β(O-R) < θ_β(m-R) < θ_β(P-R)     

Influence of the electric characteristics of II–VI semiconductor material on the electroluminescence of lanthanide complex

The organic-inorganic combined structural device (ITO/PVK:Eu/ZnS/Al) is fabricated based on layered optimization scheme. II–VI semiconductor material ZnS is acted as an electron function (transporting and acceleration) layer. The hot electrons which have been accelerated in the ZnS layer directly impact excitation europium ions through resonant energy transfer and then recombine with injected holes to form excitons in PVK or EuTTA₂(N-HPA)Phen. Europium (Eu) ions may also be excited by intramolecular energy transfer from ligands. There are two kinds of excitation mechanisms: impacted excitation and injected recombination for the combined structural device. The electroluminescence (EL) intensity of the combined structural device is strongly improved and reaches up to 381 cd/m² at 20 V compared with the pure organic structural device. It may be an effective method to improve the EL intensity of the lanthanide complex by using electric characteristics of inorganic semiconductor materials.     

The unique carrier mobility of Janus MoSSe/GaN heterostructures

Heterostructure is an effective approach in modulating the physical and chemical behavior of materials. Here, the first-principles calculations were carried out to explore the structural, electronic, and carrier mobility properties of Janus MoSSe/GaN heterostructures. This heterostructure exhibits a superior high carrier mobility of 281.28 cm²·V⁻¹·s⁻¹ for electron carrier and 3951.2 cm²·V⁻¹·s⁻¹ for hole carrier. Particularly, the magnitude of the carrier mobility can be further tuned by Janus structure and stacking modes of the heterostructure. It is revealed that the equivalent mass and elastic moduli strongly affect the carrier mobility of the heterostructure, while the deformation potential contributes to the different carrier mobility for electron and hole of the heterostructure. These results suggest that the Janus MoSSe/GaN heterostructures have many potential applications for the unique carrier mobility.     

Setup of a dipole trap for all-optical trapping

Micromotion induced by the radio-frequency field contributes greatly to the systematic frequency shifts of optical frequency standards. Although different strategies for mitigating this effect have been proposed, trapping ions optically has the potential to provide a generic solution to the elimination of micromotion. This could be achieved by trapping a single ion in the dipole trap composed of a highpower laser field. Here, we present the setup of the dipole trap composed of a 532 nm laser at a power of 10 W aiming to optically trap a single ~(40)Ca~+ and we observe an AC-Stark shift of the fluorescence spectrum line of ～22 MHz caused by the 532 nm dipole beam. The beam waist of the dipole laser is several microns, which would provide a dipole potential strong enough for all-optical trapping of a single ~(40)Ca~+ ion.