石墨烯/硫酸铅复合材料的制备及其在铅酸电池中的电化学性能

利用简单的浸渍法制备了石墨烯/硫酸铅复合材料,使得硫酸铅可以直接用作铅酸电池负极材料。该复合材料分别以100 mA.g-1、200 mA.g-1和300 mA.g-1电流密度放电时,平均放电比容量分别可达到110、94和69 mAh.g-1,而硫酸铅仅为49、5和0.5 mAh.g-1,显示出复合材料在高倍率充放电下更好的比容量和再接受充电能力。循环伏安测试表明石墨烯的电容效应随扫描速率增大而增强,同时析氢也变得严重,使得复合材料在充放电过程中充电效率比纯硫酸铅低20%。在充放电过程中,石墨烯能够提高硫酸铅1倍以上的放电容量,并将充电电压提高0.1 V。XRD和SEM结果显示硫酸铅均匀分布在石墨烯片层上,没有出现团聚现象。     

同轴电缆抗电磁干扰性能实验

利用自制实验装置，研究了同轴电缆的电容耦合频率特性、电容耦合屏蔽效果、电感耦合屏蔽效果．     

Investigation of Different Input-Matching Mechanisms Used in Wide-Band LNA Design

This paper analyzes different input-matching mechanisms used in designing the wide-band amplifiers in general, and the low noise amplifiers (LNA) in particular, and their corresponding noise impact. Among them, the most promising one is the reactive-feedback circuit configuration, which is a combination of high-frequency inductive feedback and low frequency capacitive feedback. In this paper the simulated result that both matched input impedance and low noise temperature T_n can be achieved simultaneously over a wide bandwidth in the single-ended low noise amplifier is proved mathematically and is well interpreted. This understanding of reactive feedback is crucial for the future development of ultra-wide-band low-noise amplifiers.     

基于容栅位移传感器的管路堵塞监测系统设计

现有的氮磷营养盐原位监测仪存在不足,其进样管路在受污染的水体中容易被堵塞,针对此问题提出了一种基于容栅位移传感器的管路堵塞监测系统。通过容栅位移传感器采集位移信号,经过滑动滤波以后输入STM32单片机处理,对数据分析处理后得到管路形变特征参数,进而判断管路堵塞状态,并启动滤膜更换装置更换过滤膜,排除堵塞保证机器顺利运行。系统测试和实验结果表明:容栅测位移法在非介入式管路堵塞测量中完全可行,为小管径胶管的在线堵塞检测提供了一种新的方法。     

基于ZigBee和STM32L的罐车液位监控系统设计

针对传统碳硫分析仪单片机控制频繁出现通信中断及接口单一的情况,以TMS320F2806数字信号处理器作为主控单元,设计了24位高精度ADS1224芯片模数转换电路、CH376 USB通讯电路以及W5500以太网通讯电路。在CCS2.0环境实现了TMS320F2806处理器对各功能模块的SPI程序控制。调用CH376 API函数、Socket套接字编程在VC++6.0平台分别测试了USB与以太网双接口数据传输性能。结果表明TMS320F2806与各功能模块电路设计准确、时序控制有效。数据分析的准确性与精密性可以满足在工业环境下铁基合金中碳量与硫量的测定。     

CHARACTERIZATION OF CAPACITIVE COUPLING FOR ON-CHIP CIRCULAR STACKED INDUCTORS

Capacitive coupling effects in some circular stacked inductors are studied in this paper, by taking into account the possible incomplete overlapping and cross-overlapping between up and bottom tracks of different layers. Formulas are derived for extracting the equivalent capacitance of double-and multi-spiral circular inductors with integral and fractional number of turns. Compared with the full-wave and the analytical methods with the completely overlapping assumption, the proposed method can predict equivalent capacitance and self-resonance frequency (f _SR ) accurately for on-chip circular stacked inductors used in the design of RFICs.     

Quasistationary current contributions in electronic devices

In an electronic device, the current supplied to the electrodes is related to different types of processes inside the device: current density, change in spontaneous polarization, and change in dielectric properties. Two expressions for the electrode current are derived: one is based on the time derivative of the Shockley-Ramo theorem, the other on the time derivative of the dielectric tensor. This result is illustrated for a switching liquid crystal device and a two-dimensional flux tube.     

微型化频率选择表面的设计研究

利用容性表面与感性表面之间的耦合机理能够制备微型化频率选择表面(MEFSS),周期单元尺寸将不受工作波长限制.为了提高MEFSS角度与极化的稳定性,展宽MEFSS的-3 dB带宽,文章结合传统频率选择表面"Y"形单元,利用"Y"图形构造容性表面的贴片单元与感性表面的网栅单元且以正三角形栅格拓展周期单元,采用矢量模匹配法对MEFSS栅格排布及其他结构参数变化进行精确计算.通过镀膜与光刻技术在0.15 mm厚聚酰亚胺膜两侧制备容性表面、感性表面并利用自由空间法测试.计算与实验结果均表明,采用正三角形栅格排布的MEFSS,-3 dB带宽达到7.6 GHz,不同极化下60°扫描时中心频点稳定在f₀,为MEFSS应用于曲面天线罩时提供理论与实验参考依据. 关键词： 天线罩 微型化频率选择表面 容性表面 感性表面     

介观含时电容耦合电路中压缩的产生及其在有限温度下的量子涨落

从电容和电感随时间变化的介观电容耦合电路的经典运动方程出发，在给定初始条件下，精确求解了电荷和电流涨落的时间演化规律，并考虑了温度对涨落的影响。在这样的电路中可以产生压缩，并将压缩参数与电路中的物理量联系了起来。     

Gas‐Kinetic Temperature of Planar High‐Frequency Capacitive Discharge Plasma in N2/CO2/He Gas Mixtures

Using methods of emission spectroscopy, we have determined the gaskinetic temperature fields of planar highfrequency capacitive discharge plasma in N₂/CO₂/He gas mixtures depending on the excitation frequency, discharge current, pressure, and chemical composition of the mixture. It is shown that the dominant contribution to the neutral component heating in the center of the discharge chamber is made by the processes of V–T relaxation of vibrationally excited molecules N₂(X ¹, V) and CO₂(X ¹, V), whereas in the zones near the electrodes an important role in the heating is played, along with the V–T relaxation of the N₂(X ¹, V) and CO₂(X ¹, V) molecules, by the processes of deactivation of the metastable states A ³ of the N₂ molecule.