Buffering dissociation/formation reaction of biogenic calcium carbonate

The oscillating stability of coral reef seawater pH has been maintained at around physiological pH values over the past 300 years (Pelejero et al., 2005). The stability mechanism of its pH has been interpreted in terms of the buffering dissolution/formation reaction of CaCO(3) as well as the proton consumption/generation reaction in CaCO(3)-saturated water. Here the pH-dependent solubility product [HCO(3)(-)][Ca(2+)] has been derived on the basis of the actual pH-dependent reactions for the atmospheric CO(2)/CO(2 (aq.))/HCO(3)(-)/CO(3)(2-)/Ca(2+)/CaCO(3) system. Overbasic pH peaks appeared between pH approximately 8 and approximately 9.5 during sodium hydroxide titration, as a result of simultaneous CaCO(3) formation and proton generation. The spontaneous and prompt water pH recovery from the acidic to the physiological range has been confirmed by the observation of acid/base time evolution, because of simultaneous CaCO(3) dissolution and proton consumption. The dissolution/formation of CaCO(3) in water at pH 7.5-9 does not take place without a proton consumption/generation reaction, or a buffering chemical reaction of HCO(3)(-)+Ca(2+)right arrow over left arrowCaCO(3)+H(+). SEM images of the CaCO(3) fragments showed that the acid water ate away at the CaCO(3) formed at physiological pH values. Natural coral reefs can thus recover the physiological pH levels of seawater from the acidic range through partial dissolution of their own skeletons.     

Hapten heterology for a specific and sensitive indirect enzyme-linked immunosorbent assay for organophosphorus insecticide fenthion

Five haptens with different spacer-arm attachment sites on the structure of the organophosphorus insecticide fenthion were designed and synthesized. All of the haptens were conjugated with ovalbumin (OVA) for the coating antigen, and three haptens containing all or most of the structure of fenthion were conjugated with bovine serum albumin (BSA) for the immunogen. Six polyclonal antisera were raised against the three BSA conjugates, and 30 antibody/coating conjugate combinations were selected for studies of assay sensitivity and specificity for fenthion. The study revealed the best combination with high sensitivity (I₅₀ of 0.08 ng mL⁻¹) and high assay specificity, which indicated that when structural difference between the analyte and an immunizing hapten is less than that between a coating hapten and the immunizing hapten, a high sensitive enzyme-linked immunosorbent assay (ELISA) in the heterologous system may stand a good chance to be developed. The immunity results showed that heterology in the hapten spacer-arm attachment site of the immunogen could achieve a remarkable improvement in the quantity, sensitivity, and/or specificity of antibody, and that the moiety of an analyte, which is the same as the moiety near/on the immunizing spacer-arm hapten attachment site, contributes greatly to the interaction of antibody and hapten.     

温度和缓冲溶液对胶束电动毛细管色谱的迁移时间窗口的影响

以电渗淌度、胶束电泳淌度和淌度比这3个参数为考察对象,研究了毛细管温度、缓冲溶液种类和浓度对胶束电动毛细管色谱的迁移时间窗口的影响。电渗淌度和胶束电泳淌度均随毛细管温度的升高线性的增加,粘度是这一影响中的主要因素。理论上证明了管壁表面的局部粘度与主体粘度不同。当温度变化时,电渗淌度和胶束电泳淌度的变化幅度不同。降低温度可以扩展迁移时间窗口,虽然扩展幅度较小,但在商品化仪器上易于实现。推导出能统一描述电渗淌度和胶束电泳淌度与缓冲溶液浓度间的关系式。     

在金属基片上激光沉积YBCO超导薄膜

介绍了在金属基片上激光沉积缓冲层和ＹＢａ２Ｃｕ３ｏ７－ｘ（ＹＢＣＯ）高温超导薄膜的研究结果。在带ｙｔｔｒｉａ－ｓｔａｂｉｌｉｚｅｄ－ｚｉｒｃｏｎｉａ（ＹＳＺ）缓冲层的ＮｉＣｒ合金基片上,激光原位沉积出ＹＢＣＯ超导薄膜,薄膜的零电阻转变温度度４８Ｋ,７７Ｋ时临界电流密度约为２００Ａ／ｃｍ＾２;缓冲层的取向可以通过选择适当的沉积参数来改善;用扫描隧道电子显微镜对ＹＢＣＯ薄膜的微观结构分析表明：完善的螺     

在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜

采用脉冲激光沉积(PLD)方法在Si(100)上成功生长了高度c轴取向的AlN薄膜,并以此为衬底,实现了ZnO薄膜的低温准外延生长.通过X射线衍射(XRD)、原子力显微镜(AFM)以及荧光分光光度计表征ZnO薄膜的结构、表面形貌和发光性能.结果表明,ZnO薄膜能在AlN过渡层上沿c轴准外延生长,采用AlN过渡层后,其荧光强度也有大幅提高.     

Excellent dielectric and actuated strain properties in CCTOx@BT(1−x)@KH560/NR system via a tunable BaTiO3 interfacial buffer layer

Dielectric elastomers (DEs) require high drive voltages to obtain large actuated strain, which limits their application in the biological field. In this work, we enhanced the dielectric properties of natural rubber (NR) composites by using core–shell structured (CaCu₃Ti₄O₁₂)_x@(BaTiO₃)_(1−x) (CCTO_x@BT_(1−x)) high-dielectric particles with an buffer layer, and adjusted the thickness of the BT buffer layer by adjusting the addition of titanate during the preparation process, and then observed the relationship between the dielectric properties of NR composites and the thickness of the BT buffer layer. In addition, we modified the CCTO_0.75@BT_0.25 fillers surface with silane coupling agent KH560 to enhance the interfacial interaction between the inorganic fillers and polymeric matrix to obtain better dispersion and greater dielectric properties. As a result of the optimization of the CCTO_0.75@BT_0.25@KH560 structure, the actuated strain performance is greatly improved. The actuated strain of 5 per hundred rubber (phr) CCTO_0.75@BT_0.25@KH560/NR is 16.3% at 74.03 kV/mm, which is 6.52 times higher than the actuated strain obtained by NR (2.5%) at 50.28 kV/mm. This work presents a method to optimize the structure of core–shell fillers by modulating the buffer layer, and provides a new idea for further preparation of dielectric elastomer materials with large actuated strain at low voltage.     

电极界面缓冲层对P3HT:PC61BM太阳能电池热稳定性的影响

基于溶液法加工制备的聚合物太阳能电池的高温热稳定性是决定器件能否兼容后续高温热封装工艺, 如热压封装、高温原子层沉积(ALD)等的一个关键. 本文分别利用聚(3, 4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)和MoO₃作为阳极缓冲层, 以及ZnO和LiF 作为阴极缓冲层, 制备了结构为氧化铟锡(ITO)/阳极缓冲层/3-己基取代聚噻吩:(6, 6)-苯基C₆₁-丁酸甲酯(P3HT:PC₆₁BM)/阴极缓冲层/Al 的太阳能电池, 系统地比较研究了不同界面缓冲材料对器件光电转换性能及稳定性的影响, 特别是在高温煺火条件下器件的性能稳定性差异. 结果表明, 聚合物太阳能电池的热稳定性同器件的结构以及所用的缓冲层材料有密切的相关性. 其中, 利用MoO₃及ZnO分别作为阳极与阴极界面修饰层的P3HT:PC₆₁BM器件在120-150 ℃的温度范围内能够较好地保持器件的光电转换性能. 这一结果为后续需要高温封装工艺的器件提供了有意义的结构优化指导. 此外, 研究结果还表明利用ZnO作为阴极缓冲层能够改善器件的长时间稳定性.     

液栅型石墨烯场效应管的缓冲液浓度和pH响应特性

本文使用化学气相沉积（Chemical Vapor Deposition,CVD）石墨烯制作了高灵敏度、低噪声的液栅型石墨烯场效应管（Solution-Gated Graphene Field Effect Transistors,SGFETs）,并测试了该器件对磷酸盐缓冲液（Phosphate Buffered Saline,PBS）浓度和pH的响应特性. 随缓冲液浓度的增大,SGFETs转移特性曲线的最小电导点向左偏移,偏移量与溶液浓度的自然对数呈线性关系. 随pH的增大,其最小电导点向右偏移,偏移量与溶液pH呈线性关系. 该响应特性对石墨烯生化传感器排除外界影响因素有一定的指导作用.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。