Au_nAg_m~-(n+m=2～4)负离子团簇光脱附电子谱计算

利用密度泛函理论,通过几何优化和态密度计算了Au_nAg_m^-（n+m=2～4）团簇的光电子光谱,结果显示只有Au₂Ag₂^-团簇的第一个峰发生了0.5eV的红移,而其它团簇的峰位置符合的很好,因此理论计算给出的团簇结构是合理的.     

AunLa(n=1~8)团簇的密度泛函研究简

采用密度泛函理论(DFT)中的杂化密度泛函B3LYP方法,在LANL2DZ基组水平上研究了Aun La(n=1~8)团簇的几何结构.计算并讨论了基态结构稳定性及电子性质.结果表明,当n=3-8时,基态结构均为三维结构且La原子趋向与更多的Au原子结合.团簇二阶能量差分,能隙和化学硬度计算结果显示除了AuLa外,具有偶数数目的团簇比奇数数目的团簇具有更好的稳定性,其中,Au3La团簇的稳定性相对较好.     

Density functional theory study on Ni-doped MgnNi (n=1-7) clusters

The possible geometrical and the electronic structures of small MgnNi(n = 1-7) clusters are optimised by the density functional theory with a LANL2DZ basis set.The binding energy,the energy gap,the electron affinity,the dissociation energy and the second difference in energy are calculated and discussed.The properties of Mg n Ni clusters are also discussed when the number of Mg atom increases.     

高压下固相硝基甲烷分解的分子动力学计算

基于ReaxFF, 采用NVT系综和Berendsen方法对0–7 GPa时和2500 K时固相硝基甲烷的 分解过程进行分子动力学计算, 通过分析硝基甲烷发生分解反应生成的碎片数量随时间的变化, 对不同压强下硝基甲烷的分解机理进行研究. 计算结果表明在0–3 GPa时, 初始分解路径为C–N键断裂和硝基甲烷的异构化; 在4–7 GPa 时, 初始分解路径为分子间质子转移和C–N, N–O键的断裂; 在硝基甲烷的第二阶段反应中存在H₂O, NO, NO₂, HONO, 硝基甲烷分子自身的催化反应. 硝基甲烷在高温高压下发生热分解反应生成碳团簇, 且团簇中碳原子的数量和碳团簇的空间构型随着压强的变化而变化. 关键词： ReaxFF 分子动力学 热分解 压强效应 碳团簇     

Al12N、Al12B团簇结构和电子性质的密度泛函计算

利用密度泛函理论研究了Al12N和Al12B团簇的原子结构和电子性质,通过各种异构体的比较,发现两种掺杂团簇的最低能量结构都是完好的二十面体(Ih)结构,N(B)原子占据在二十面体的中心.高对称性团簇形成稀疏离散的电子态密度和大的电子能隙.在Al-N之间发生较大的电荷转移.因此我们建议把Al12N团簇看作是碱金属超原子,Al12B团簇看作是卤素超原子,用来构造团簇组装固体.     

第一性原理对Al_mSi_n(m=1,2;n=1～6)团簇结构与性质的研究

本文运用第一性原理对Al_mSi_n（m=1,2;n=1～6）团簇的结构与性质进行了研究.在BLYP的水平上进行了结构优化和频率分析,得到了团簇的最低能量结构.同时计算和讨论了A1_msi_n团簇的束缚能、总能的二阶能量差分和分裂能以及费米能随原子数的变化.研究结果表明:Al_mSi_n团簇在m+n<4时的几何结构是平面结构,从4个原子开始转为空间的立体结构;除AlSi₃和Al₂Si₂团簇外,Al_mSi_n（m=1,2;n=1～6）团簇的束缚能随原子数增加而减小;分析A1_mSi_n（m=1,2;n=1～6）团簇的二阶能量差分和分裂能发现:在m+n=3,5时,团簇都出现较稳定的结构.     

Comparison of Nitrogen Activation on Trinuclear Niobium and Tungsten Sulfide Clusters Nb3Sn and W3Sn (n=0–3): A DFT Study

The reaction of N₂ with trinuclear niobium and tungsten sulfide clusters Nb₃S_n and W₃S_n (n=0–3) was systematically studied by density functional theory calculations with TPSS functional and Def2-TZVP basis sets. Dissociations of N−N bonds on these clusters are all thermodynamically allowed but with different reactivity in kinetics. The reactivity of Nb₃S_n is generally higher than that of W₃S_n. In the favorite reaction pathways, the adsorbed N₂ changes the adsorption sites from one metal atom to the bridge site of two metal atoms, then on the hollow site of three metal atoms, and at that place, the N−N bond dissociates. As the number of ligand S atoms increases, the reactivity of Nb₃S_n decreases because of the hindering effect of S atoms, while W₃S and W₃S₂ have the highest reactivity among four W₃S_n clusters. The Mayer bond order, bond length, vibrational frequency, and electronic charges of the adsorbed N₂ are analyzed along the reaction pathways to show the activation process of the N−N bond in reactions. The charge transfer from the clusters to the N₂ antibonding orbitals plays an essential role in N−N bond activation, which is more significant in Nb₃S_n than in W₃S_n, leading to the higher reactivity of Nb₃S_n. The reaction mechanisms found in this work may provide important theoretical guidance for the further rational design of related catalytic systems for nitrogen reduction reactions (NRR).     

Structure and stability of a silicon cluster on sequential doping with carbon atoms

SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si₁₀ and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon–carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si–Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O₂ molecule on Si₉C and Si₈C₂ clusters, respectively.