Nanoscale formation mechanism of conducting filaments in NiO thin films

We have studied the nanoscale electrical properties of NiO thin films by using conducting atomic force microscopy (CAFM) to understand the mechanism of resistance change of the NiO thin films as we changed the applied voltage. We observed that inhomogeneous conducting filaments were generated by external voltage bias; in addition, some of the inhomogeneous conducting filaments were durable while some of them were not, and they disappeared. We deduced that the resistance change of the NiO thin films was related to inhomogeneous filamentary conducting paths generated by both Ni ions in thermodynamically unstable NiO and the existence of conducting filament segments generated by high voltage bias.     

Structural and physical properties of ZnO:Al films grown on glass by direct current magnetron sputtering with the oblique target

ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10⁻³ Ω cm), the highest free electron concentration (4.63 × 10²⁰ cm⁻³) and a moderate Hall mobility (4.0 cm² V⁻¹ s⁻¹). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.     

Fabrication of 2D–3D photonic crystal heterostructures by glancing angle deposition

We fabricate 2D–3D photonic crystal heterostructures based on the silicon [001]-diamond:1 square spiral geometry using glancing angle deposition. We compare the normal incidence reflection properties of the fabricated 2D–3D heterostructures to simulated spectra generated using finite-difference time-domain calculations. Reflection peaks are observed, resulting from the presence of a photonic band gap, and defect modes are created by the 2D layer. Deterioration of the reflectance peaks with increased number of vertical spiral periods is observed. A series of square spiral structures are fabricated with a varying number of vertical periods to quantify the degradation of reflection peaks. At normal light incidence, a maximum reflection peak is observed from the film with three vertical periods. Beyond three spiral rotations, deterioration of the substrate-plane periodicity causes scattering losses.     

柔性基底红外波段左手材料制备及光学特性

采用平板电极化学电沉积的方法,通过调节实验参量,在柔性ITO导电薄膜基底上制备了尺度与红外波长匹配、结构单元大小不等、排列无序的银树枝状结构.通过调节聚乙二醇-20000浓度可以很好地调控银树枝状结构单元的形貌和尺寸,研究发现,在一定范围内增加电解液中的聚乙二醇-20000浓度,可在基底上形成分布较密、分枝较细、分枝级数较高的银树枝状结构单元.通过在银树枝状结构表面涂覆一定厚度的聚乙烯醇作为绝缘层,组装成了柔性三明治结构复合材料,测试得到样品在红外波段的多通带透射谱,平板聚焦实验进一步验证了样品的左手效应.     

多功能抗激光损伤高反射膜

为了能同时满足半导体激光器和YAG激光器对薄膜的特殊要求,在分析高反射膜理论的基础上,选取TiO2和SiO2为高、低折射率材料镀制了周期性多层介质高反射膜。研究了材料的光学及机械特性,重点解决了薄膜的消偏振和抗激光损伤问题。实验采用电子束真空镀膜并加以考夫曼离子源辅助沉积,利用TFC软件进行膜系设计,通过调整镀膜工艺参数和监控方法,在10mm×1．8mm的K9基底上镀制了符合要求的高反射膜,结果表明,当激光以45°入射时,薄膜在900～1100nm的P光与s光的反射率均大于99．95％。所制备的高反射膜性能稳定,抗激光损伤阈值高,能同时满足两种激光器的使用要求。     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Superinsulator–superconductor duality in two dimensions

For nearly a half century the dominant orthodoxy has been that the only effect of the Cooper pairing is the state with zero resistivity at finite temperatures, superconductivity. In this work we demonstrate that by the symmetry of the Heisenberg uncertainty principle relating the amplitude and phase of the superconducting order parameter, Cooper pairing can generate the dual state with zero conductivity in the finite temperature range, superinsulation. We show that this duality realizes in the planar Josephson junction arrays (JJA) via the duality between the Berezinskii–Kosterlitz–Thouless (BKT) transition in the vortex–antivortex plasma, resulting in phase-coherent superconductivity below the transition temperature, and the charge-BKT transition occurring in the insulating state of JJA and marking formation of the low-temperature charge-BKT state, superinsulation. We find that in disordered superconducting films that are on the brink of superconductor–insulator transition the Coulomb forces between the charges acquire two-dimensional character, i.e. the corresponding interaction energy depends logarithmically upon charge separation, bringing the same vortex-charge-BKT transition duality, and realization of superinsulation in disordered films as the low-temperature charge-BKT state. Finally, we discuss possible applications and utilizations of superconductivity–superinsulation duality.     

Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers

This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight (M_w), PVK with high M_w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm²/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.

     

19.5nm极紫外反射镜的研制

介绍了一种用于太阳观测19.5nm极紫外多层膜的研究工作。利用软件对规整的Mo/Si膜系结构进行了优化,拓宽了反射带宽,提高了积分反射率。采用双离子束溅射技术,时间控厚,成功制备了该反射镜。通过同步辐射反射率计测试表明,峰值反射率27.5%,均匀性在1%以内,已初步达到预设要求。     

Blended polyethylene terephthalate and polyethylene naphthalate polymers for scintillation base substrates

Polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are both good candidates for use as scintillation base substrates. One advantage is their relatively high density of 1.33 g cm⁻³. To enhance their relative strengths and to mitigate their weaknesses, we blended PET and PEN 1:1 by weight and found that the overall characteristics are improved. The wavelength at maximum emission was 415 nm, the refractive index was 1.61, and the light yield was 0.85 times that of PEN. These results increase the available options for base materials to be used as scintillators.