首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   155篇
  免费   22篇
  国内免费   10篇
化学   138篇
晶体学   2篇
力学   3篇
综合类   2篇
物理学   42篇
  2023年   6篇
  2022年   3篇
  2021年   2篇
  2020年   11篇
  2019年   7篇
  2018年   5篇
  2017年   6篇
  2016年   10篇
  2015年   7篇
  2014年   8篇
  2013年   21篇
  2012年   14篇
  2011年   1篇
  2010年   3篇
  2009年   3篇
  2008年   7篇
  2007年   5篇
  2006年   4篇
  2005年   5篇
  2004年   5篇
  2003年   7篇
  2002年   6篇
  2001年   6篇
  2000年   2篇
  1999年   3篇
  1998年   3篇
  1997年   2篇
  1996年   1篇
  1995年   2篇
  1994年   4篇
  1993年   4篇
  1992年   2篇
  1990年   1篇
  1989年   1篇
  1988年   1篇
  1984年   2篇
  1981年   1篇
  1980年   1篇
  1978年   1篇
  1976年   1篇
  1974年   2篇
  1973年   1篇
排序方式: 共有187条查询结果,搜索用时 15 毫秒
11.
The possibility of forming stable BeR2:ArH:Y? (R=H, F, Cl; ArH=naphthalene, pyrene; Y=Cl, Br) ternary complexes in which the beryllium compounds and anions are located on the opposite sides of an extended aromatic system is explored by means of MP2/aug‐cc‐pVDZ ab initio calculations. Comparison of the electron‐density distribution of these ternary complexes with the corresponding BeR2:ArH and ArH:Y? binary complexes reveals the existence of significant cooperativity between the two noncovalent interactions in the triads. The energetic effects of this cooperativity are quantified by evaluation of the three‐body interaction energy Δ3E in the framework of the many‐body interaction‐energy (MBIE) approach. Although an essential component of the interaction energies is electrostatic and is well reflected in the changes in the molecular electrostatic potential of the aromatic system on complexation, strong polarization effects, in particular for the BeR2:ArH interactions, also play a significant role. The charge transfers associated with these polarization effects are responsible for significant distortion of both the BeR2 and the aromatic moieties. The former are systematically bent in all the complexes, and the latter are curved to a degree that depends on the nature of the R substituents of the BeR2 subunit.  相似文献   
12.
Abstract

The emission spectra of isotopic BeO molecules as excited in low-pressure arc have been photographed in the region 300–350 nm at medium dispersion. The bands have been assigned to the c3II ? a3II system. The vibrational numbering was obtained from a study of the vibrational isotope effect. Vibrational constants for involved states are derived from least-squares fits of the measured bandhead wavenumbers.  相似文献   
13.
The channelling of protons through a thin beryllium crystal is simulated in a computer. The angular dependence of the momentum density is computed using particle trajectory approximation and is reported as the transmission spectra. In obtaining the spectra, the energy loss suffered by protons due to electron multiple scattering is considered and the effect of thermal vibrations treated separately. The spectra obtained are characteristic of the hcp structure of Be. Positions of the major dips in the transmission spectra are found to correlate well with the directions of neighbouring strings. Variations in the angle of incidence of the beam and in its initial azimuthal angle bring about modifications in the spectra depending on the transverse kinetic energy of the incident particles and the crystalline structure of Be. Thermal vibration of the lattice does not modify the spectra appreciably.  相似文献   
14.
S V Deshmukh 《Pramana》1978,11(6):755-760
The effect of Gaunt factor correction on temperature estimation over a range 100 to 1500 eV had been studied. Greene’s analytical expression for the quantum mechanical Gaunt factor averaged over Maxwellian distribution is used. Transmission ratios are calculated with and without Gaunt factor for various combinations of beryllium foils, taking into account x-ray emission due to free-free transitions. A significant difference (≳ 15%) is observed between the temperatures estimated from classical and quantum mechanical curves, above 600 eV. Selection of foil combinations useful for estimating higher temperatures is also discussed.  相似文献   
15.
Ying Li  Di Wu  Zhi‐Ru Li 《ChemInform》2009,40(8):no-no
ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.  相似文献   
16.
17.
DFT calculations provide a range of detailed predictions of structures for known stoichiometries at atmospheric pressure, and of some structures at elevated pressures.  相似文献   
18.
19.
The electronic bands appearing in the region 300–330 nm were produced in a low-pressure DC are with beryllium electrodes. The bands were obtained in the atmosphere of ordinary water vapour and heavy water vapour. From isotope shift studies, experimental conditions and the similarity with the bands of isoelectronic BeF, the emitting molecules were identified as BeOH and BeOD, respectively.  相似文献   
20.
Using high-resolution transmission electron microscopy and electron energy-loss spectroscopy, we show that beryllium oxide crystallizes in the planar hexagonal structure in a graphene liquid cell by a wet-chemistry approach. These liquid cells can feature van-der-Waals pressures up to 1 GPa, producing a miniaturized high-pressure container for the crystallization in solution. The thickness of as-received crystals is beyond the thermodynamic ultra-thin limit above which the wurtzite phase is energetically more favorable according to the theoretical prediction. The crystallization of the planar phase is ascribed to the near-free-standing condition afforded by the graphene surface. Our calculations show that the energy barrier of the phase transition is responsible for the observed thickness beyond the previously predicted limit. These findings open a new door for exploring aqueous-solution approaches of more metal-oxide semiconductors with exotic phase structures and properties in graphene-encapsulated confined cells.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号