Evidence for special relativity with de Sitter space-time symmetry

I show the formulation of de Sitter Special Relativity (dS-SR) based on Dirac-Lu-Zou-Guo's discussions. dS-SR quantum mechanics is formulated, and the dS-SR Dirac equation for hydrogen is suggested. The equation in the earth-QSO framework reference is solved by means of the adiabatic approach. It's found that the fine-structure "constant" α in dS-SR varies with time. By means of the t-z relation of the ΛCDM model, α's time-dependency becomes redshift z-dependent. The dS-SR's predictions of Δα/α agree with data of spectra of 143 quasar absorption systems, the dS-space-time symmetry is SO(3,2) (i.e., anti-dS group) and the universal parameter R (de Sitter ratio) in dS-SR is estimated to be R≈2.73×10¹² ly. The effects of dS-SR become visible at the cosmic space-time scale (i.e., the distance ≥ 10⁹ ly). At that scale, dS-SR is more reliable than Einstein SR. The α-variation with time is evidence of SR with de Sitter symmetry.     

铝粉点火微观机理的光谱研究

 铝粉是一种含能高的材料,它被广泛地添加到含能材料中。利用3台单色谱仪和OMA谱仪等多种谱仪技术,研究了铝粉在几种不同环境下的快速反应微观特性。研究表明：铝粉冲击波点火的临界条件和铝粉的物理状态相关。微米铝粉点火的临界温度为2 100 K,它接近Al₂O₃的熔化温度。它表明,在空气中容易氧化的微米铝粉点火,必须使铝粉表面的氧化层熔化。在气相反应中,微米铝粉和氧的反应是主要的;和水的反应是次要的。减小微米铝粉的颗粒尺寸,可以明显提高快速反应温度。 含铝复合燃料中的液体燃料反应后的铝粉才能参与反应;铝粉添加至气相反应介质后将明显提高反应温度。     

Cr4+∶YAG固体激光器效率的理论分析

对Cr4+∶YAG固体激光器的吸收效率、量子效率、储存效率和提取效率等本征效率进行了分析.Cr4+∶YAG晶体的吸收截面、发射截面、上能级寿命和激活离子浓度等对激光器的本征效率有很大的影响.提高Cr4+∶YAG晶体的光学品质和激活离子的掺杂浓度,优化泵浦源的运转波长和激光腔的设计都能显著改善Cr4+∶YAG固体激光器的本征效率.     

光刻机硅片表面不平度原位检测技术

随着光刻特征尺寸的不断减小,硅片表面不平度对光刻性能的影响越来越显著.该文提出了一种新的硅片表面不平度的原位检测技术本文在分析特殊测试标记成像规律的基础上,讨论了测试标记的对准位置偏移量与硅片表面起伏高度的变化规律,提出了一种新的硅片表面不平度原位检测技术.实验表明,该技术可实现硅片表面不平度及硅片表面形貌的高准确度原位测量.该技术考虑了光刻机承片台吸附力的非均匀性对硅片表面不平度的影响,更真实反映曝光工作状态下的硅片表面不平度大小.与现有的原位检测方法相比,硅片表面不平度的测量空间分辨率提高了1.67%倍,可实现硅片表面形貌的原位检测.     

13.5—14.6MeV中子能区锗的同位素反应截面的测量

报道了在13.5—14.6MeV中子能区用活化法测得的⁷⁶Ge(n,2n)⁷⁵Ge, ⁷⁰Ge(n,2n)⁶⁹Ge, ⁷⁰Ge(n, p)⁷⁰Ga, ⁷²Ge(n,p)⁷²Ga, ⁷³Ge(n,p)⁷³Ga, ⁷²Ge(n,α)^69mZn和⁷⁴Ge(n, α)^71mZn的反应截面值. 中子注量用⁹³Nb(n,2n)^92mNb反应截面得到. 单能中子由T(d,n)⁴He反应获得. 同时还列举了已收集到的文献值以作比较.     

Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques

This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate. While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system is useful in various information displays because of its freedom of setting and location.     

57Fe Mössbauer spectroscopic study of (25−x)MnO–xZnO–15Fe2O3–60B2O3 glasses

The ⁵⁷Fe Mössbauer technique has been used to investigate the effect of zinc oxide substitution in (25???x)MnO–xZnO–15Fe₂O₃–60B₂O₃ glass system (x?=?0, 5, 10, 15 and 20 mol% of ZnO ). Mössbauer absorption spectra for all the samples recorded at room temperature suggest the existence of the two paramagnetic quadrupole doublets. The observed variations in hyperfine parameters have been explained on the basis of cations distribution and exchange interaction at the lattice sites and it is concluded that B–B interaction increases while the metal–metal interaction decreases due to replacement of manganese oxide by zinc oxide. These results suggest that the present glass system exhibits a paramagnetic behaviour that changes towards the weak paramagnetic when manganese oxide was replaced with zinc oxide.     

Parity anomaly in a \mathcal{P}\mathcal{T}-symmetric quartic Hamiltonian

In this paper, two independent methods are used to show that the non-Hermitian -symmetric wrong-sign quartic Hamiltonian H = (1/2m)p ² − gx ⁴ is exactly equivalent to the conventional Hermitian Hamiltonian . First, this equivalence is demonstrated by using elementary differential-equation techniques and second, it is demonstrated by using functional-integration methods. As the linear term in the Hermitian Hamiltonian is proportional to ℏ, this term is anomalous; that is, the linear term in the potential has no classical analog. The anomaly is a consequence of the broken parity symmetry of the original non-Hermitian -symmetric Hamiltonian. The anomaly term in remains unchanged if an x ² term is introduced into H. When such a quadratic term is present in H, this Hamiltonian possesses bound states. The corresponding bound states in are a direct physical measure of the anomaly. If there were no anomaly term, there would be no bound states.     

Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity

We fully characterize the fine spectral structure of neutral and negatively charged single microcavity quantum dot excitons, using polarization-sensitive magneto-photoluminescence spectroscopy. We show that the microcavity allows the simultaneous detection of both the bright and dark excitons using Faraday configuration. Thus, we were able to fully determine the fine structure and the g-factors of the neutral and negatively charged single exciton states within the same single quantum dot. Our measurements are in excellent agreement with novel, many carrier model calculations, which take into account Coulomb and exchange interactions among all the confined e–h pair states.     

金属衬底上高质量大面积石墨烯的插层及其机制

石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.