一类时滞离散动力系统及其截断系统定性行为的研究

研究了一类时滞离散动力系统的一次截断系统,仔细分析其分支行为和混沌性态等定性行为.与原系统进行比较,证明二者主要的定性行为非常相似.最后对未来工作提出几点建议.     

Dielectric constants of fluid mixtures over a wide range of temperature and density

A new expression is presented for estimating the dielectric constant of a fluid mixture as a function of temperature, density and composition. The estimated dielectric constants (and their derivatives) are required for phase-equilibrium calculations, based on an equation of state, for systems containing electrolytes and nonelectrolytes. The new expression holds for the entire range of fluid densities, from zero to liquid-like densities. Mixing of components is performed on a volume-fraction basis at constant temperature and constant reduced density. For polar components where data are not available at the temperature and/or reduced density of interest, the well-characterized behavior of water is used to extrapolate the available pure-component data. The importance of using the correct density of the mixture is shown. Using one adjustable parameter for each nonideal binary subsystem, predicted results can be significantly improved.     

Determination of cosmological parameters: An introduction for non-specialists

I start by defining the cosmological parameters H ₀, Θ _m and Θ_A. Then I show how the age of the universe depends on them, followed by the evolution of the scale parameter of the universe for various values of the density parameters. Then I define strategies for measuring them, and show the results for the recent determination of these parameters from measurements on supernovas of type 1a. Implications for particle physics is briefly discussed at the end.     

磁场渗透导体壳的实验研究

本文叙述了测量阶跃脉冲垂直磁场和水平磁场渗透HL-1装置各种比例导体壳时间常数的方法。对空芯和铁芯变压器情况分别做了实验。给出了相应结果。     

Further examples of integrable systems in two dimensions

The construction of the second constant of motion of second order for two-dimensional classical systems is carried out in terms ofz=q ₁ +iq ₂ andq=q ₁ −iq ₂. As a result a class of Toda-type potentials admitting second order invariants is explored.     

Dielectric properties of oxydianiline‐based polyimide thin films according to the water uptake

For polyimide thin films, the dielectric properties were investigated with the capacitance and optical methods. The dielectric constants of the 4,4′‐oxydianiline (ODA)‐based polyimide thin films varied from 2.49 to 3.10 and were in the following decreasing order: 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA)–ODA > 1,2,4,5‐benzenetetracarboxylic dianhydride (PMDA)–ODA > 4,4′‐hexafluoroisopropylidene diphthalic dianhydride (6FDA)–ODA. According to the absorption of water, the diffusion coefficients in the films varied from 4.8 × 10^?10 to 7.2 × 10^?10 cm²/s and were in the following increasing order: BPDA–ODA < PMDA–ODA < 6FDA–ODA. The dielectric constants and diffusion coefficients of the polyimides were affected by the morphological structures, including the molecular packing order. However, because of the water uptake, the changes in the dielectric constants in the polyimide thin films varied from 0.49 to 1.01 and were in the following increasing order: BPDA–ODA < 6FDA–ODA < PMDA–ODA. Surprisingly, 6FDA–ODA with bulky hexafluoroisopropylidene groups showed less of a change in its dielectric constant than PMDA–ODA. The total water uptake for the polyimide thin films varied from 1.43 to 3.19 wt % and was in the following increasing order: BPDA–ODA < 6FDA–ODA < PMDA–ODA. This means that the changes in the dielectric constants in the polyimide thin films were significantly related to the morphological structure and hydrophobicity of hexafluoroisopropylidene groups. Therefore, the morphological structure and chemical affinity in the polyimide thin films were important factors in controlling the dielectric properties. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2190–2198, 2002     

Investigation of sol-gel derived HfO2 on 4H-SiC

Deposition of HfO₂ films on n-type 4H-SiC substrates by sol-gel spin-on coating technique has been performed and the physical and electrical characteristics of this film as a function of annealing temperature (550, 750, and 850 °C for 30 min) have been reported. The physical properties of the film have been characterized using a Filmetrics and X-ray diffractometer, while conduction atomic force microscope and semiconductor parameter analyzer were used for electrical characterization. Phase transformation has been revealed in the oxide as the annealing temperature changed. Refractive index, relative density, dielectric constant of the film, and oxide-semiconductor interface trap density have been extracted and related to the leakage current through the oxide. It has been recorded that, oxide annealed at 700 °C has demonstrated the lowest leakage current and the best oxide reliability. The reasons of these observations have been explained.     

电路暂态过程的教学研究

从解法、解的形态和时间常数三个方面研究了电路暂态过程的教学。     

一个推广的具最佳常数的多参数Hardy-Hilbert不等式

引入λ1,λ2,α等多个参数,利用权系数方法,给出了一个推广的具最佳常数的多参数Hardy-Hilbert重级数不等式,并给出其等价形式.